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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20120299046A1

    公开(公告)日：2012-11-29

    申请号：US13316666

    申请日：2011-12-12

    申请人： Shuji Itonaga

    发明人： Shuji Itonaga

    IPC分类号： H01L33/42

    CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L2933/0016

    摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode layer and a second electrode layer. The first semiconductor layer includes a first portion and a second portion thicker than the first portion. The second portion includes a side surface rising from a major surface of the first portion. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode layer is provided along the major surface of the first portion and is in contact with the side surface of the second portion. The second electrode layer is provided on the second semiconductor layer.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，发光层，第二导电类型的第二半导体层，第一电极层和第二电极层。 第一半导体层包括第一部分和比第一部分更厚的第二部分。 第二部分包括从第一部分的主表面上升的侧表面。 发光层设置在第二部分上。 第二半导体层设置在发光层上。 第一电极层沿着第一部分的主表面设置并且与第二部分的侧表面接触。 第二电极层设置在第二半导体层上。

    Ridge waveguide semiconductor laser and method of manufacturing the same
    4.
    发明申请
    Ridge waveguide semiconductor laser and method of manufacturing the same 审中-公开
    脊波导半导体激光器及其制造方法

    公开(公告)号：US20060078025A1

    公开(公告)日：2006-04-13

    申请号：US11181977

    申请日：2005-07-15

    申请人： Shuji Itonaga

    发明人： Shuji Itonaga

    IPC分类号： H01S5/00

    CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/2205 ,  H01S5/2223 ,  H01S5/3436

    摘要： A substrate, a laminated structure formed above the substrate and including a first cladding layer, an active layer, and a second cladding layer each containing a compound semiconductor, a current confinement layer containing a compound semiconductor, which is formed on the second cladding layer so as to have an opening, and a ridge portion containing a compound semiconductor, covering the opening of the current confinement layer, and electrically connecting to the second cladding layer, are provided. At least an edge portion of the current confinement layer facing the opening is located under the ridge portion.

    摘要翻译： 一种基板，层叠结构，形成在基板的上方，具有包含化合物半导体的第一包层，有源层和第二包层，形成在第二包层上的含有化合物半导体的电流限制层， 具有开口部，以及包含化合物半导体的脊部，覆盖电流限制层的开口部，与第二包层层电连接。 面向开口的电流限制层的至少边缘部分位于脊部下方。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130032838A1

    公开(公告)日：2013-02-07

    申请号：US13406329

    申请日：2012-02-27

    申请人： Tadaaki Hosokawa ,  Shuji Itonaga

    发明人： Tadaaki Hosokawa ,  Shuji Itonaga

    IPC分类号： H01L33/58 ,  H01L33/50

    CPC分类号： H01L33/10 ,  H01L33/486 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

    摘要翻译： 根据一个实施例，提供了具有基座，安装材料和半导体发光元件的芯片的半导体发光器件。 安装材料设置在基座上。 半导体发光元件的芯片通过安装材料固定在基座上。 半导体发光元件的芯片设置有蓝宝石衬底，有源区域，遮光部分和用于向有源区域提供电力的阳极和阴极电极。 有源区设置在蓝宝石衬底上，并且具有通过提供电力来发光的发光层。 遮光部形成在蓝宝石基板的安装材料侧。 遮光部防止由发光层产生的光照射安装材料。

    Method of manufacturing a semiconductor device having a wiring formed by silver bromide
    7.
    发明授权
    Method of manufacturing a semiconductor device having a wiring formed by silver bromide 失效
    具有由溴化银形成的布线的半导体器件的制造方法

    公开(公告)号：US5661078A

    公开(公告)日：1997-08-26

    申请号：US449674

    申请日：1995-05-24

    申请人： Kazuyuki Yahiro ,  Shuji Itonaga

    发明人： Kazuyuki Yahiro ,  Shuji Itonaga

    IPC分类号： H01L21/3205 ,  H01L21/268 ,  H01L21/288 ,  H01L21/302 ,  H01L21/768 ,  H01L23/52 ,  H01L21/283

    CPC分类号： H01L21/288

    摘要： In a semiconductor device according to the present invention, a diffusion layer is formed on a silicon substrate, and a Silicon oxide film is deposited thereon. A hole communicating with the diffusion layer is formed in the silicon oxide film. A silver bromide emulsion is applied to the silicon oxide film having the hole by the spin coat technique. The silver bromide emulsion is irradiated with light through a mask to leave only that portion of the emulsion which is exposed by the light. By doing so, a metal wiring is formed integrally with a via hole, and thus decreased in resistance and suitable for forming the via hole. Consequently, a semiconductor device having such a wiring can be obtained easily, inexpensively.

    摘要翻译： 在根据本发明的半导体器件中，在硅衬底上形成扩散层，并在其上淀积氧化硅膜。 在氧化硅膜中形成与扩散层连通的孔。 通过旋涂法将溴化银乳剂施加到具有孔的氧化硅膜上。 溴化银乳剂通过掩模用光照射，仅留下被光暴露的那部分乳液。 通过这样做，金属布线与通孔形成一体，因此电阻降低并且适于形成通孔。 因此，可以容易地，廉价地获得具有这种布线的半导体器件。

    Semiconductor light emitting device
    8.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08963192B2

    公开(公告)日：2015-02-24

    申请号：US13406329

    申请日：2012-02-27

    申请人： Tadaaki Hosokawa ,  Shuji Itonaga

    发明人： Tadaaki Hosokawa ,  Shuji Itonaga

    IPC分类号： H01L33/62 ,  H01L33/10 ,  H01L33/48

    CPC分类号： H01L33/10 ,  H01L33/486 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

    摘要翻译： 根据一个实施例，提供了具有基座，安装材料和半导体发光元件的芯片的半导体发光器件。 安装材料设置在基座上。 半导体发光元件的芯片通过安装材料固定在基座上。 半导体发光元件的芯片设置有蓝宝石衬底，有源区域，遮光部分和用于向有源区域提供电力的阳极和阴极电极。 有源区设置在蓝宝石衬底上，并且具有通过提供电力来发光的发光层。 遮光部形成在蓝宝石基板的安装材料侧。 遮光部防止由发光层产生的光照射安装材料。

    Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing a semiconductor light emitting device
    9.
    发明申请
    Semiconductor light emitting device, semiconductor light emitting apparatus, and method of manufacturing a semiconductor light emitting device 审中-公开
    半导体发光器件，半导体发光器件和半导体发光器件的制造方法

    公开(公告)号：US20060202216A1

    公开(公告)日：2006-09-14

    申请号：US11359371

    申请日：2006-02-23

    申请人： Shuji Itonaga

    发明人： Shuji Itonaga

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    摘要： A semiconductor light emitting device comprises: a semiconductor multilayer structure; and an aluminum nitride layer. The semiconductor multilayer structure includes a light emitting layer that emits a light. The aluminum nitride layer is provided on a surface of the semiconductor multilayer structure. The aluminum nitride layer has asperities with an average pitch of not more than half an in-medium wavelength of the light in aluminum nitride. Alternatively, the semiconductor light emitting device may have asperities composed of a plurality of protrusions including the aluminum nitride layer and a plurality of depressions intruding into the semiconductor multilayer structure.

    摘要翻译： 一种半导体发光器件包括：半导体多层结构; 和氮化铝层。 半导体多层结构包括发光的发光层。 氮化铝层设置在半导体多层结构的表面上。 氮化铝层具有平均间距不大于氮化铝中的光的介质中波长的一半的粗糙度。 或者，半导体发光器件可以具有由包括氮化铝层的多个突起和入射到半导体多层结构中的多个凹陷构成的凹凸。