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    Semiconductor light emitting device
    1.
    发明授权
    Semiconductor light emitting device 有权
    半导体发光器件

    公开(公告)号：US08963192B2

    公开(公告)日：2015-02-24

    申请号：US13406329

    申请日：2012-02-27

    申请人： Tadaaki Hosokawa ,  Shuji Itonaga

    发明人： Tadaaki Hosokawa ,  Shuji Itonaga

    IPC分类号： H01L33/62 ,  H01L33/10 ,  H01L33/48

    CPC分类号： H01L33/10 ,  H01L33/486 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

    摘要翻译： 根据一个实施例，提供了具有基座，安装材料和半导体发光元件的芯片的半导体发光器件。 安装材料设置在基座上。 半导体发光元件的芯片通过安装材料固定在基座上。 半导体发光元件的芯片设置有蓝宝石衬底，有源区域，遮光部分和用于向有源区域提供电力的阳极和阴极电极。 有源区设置在蓝宝石衬底上，并且具有通过提供电力来发光的发光层。 遮光部形成在蓝宝石基板的安装材料侧。 遮光部防止由发光层产生的光照射安装材料。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130032838A1

    公开(公告)日：2013-02-07

    申请号：US13406329

    申请日：2012-02-27

    申请人： Tadaaki Hosokawa ,  Shuji Itonaga

    发明人： Tadaaki Hosokawa ,  Shuji Itonaga

    IPC分类号： H01L33/58 ,  H01L33/50

    CPC分类号： H01L33/10 ,  H01L33/486 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

    摘要： According to one embodiment, a semiconductor light emitting device having a base, a mounting material and a chip of a semiconductor light emitting element is provided. The mounting material is provided on the base. The chip of the semiconductor light emitting element is fixed onto the base via the mounting material. The chip of the semiconductor light emitting element is provided with a sapphire substrate, an active region, a light shielding portion and anode and cathode electrodes for supplying an electric power to the active region. The active region is provided on the sapphire substrate and has a light emitting layer for emitting light by supplying electric power. The light shielding portion is formed on the sapphire substrate on the side of the mounting material. The light shielding portion prevents the mounting material from being irradiated with the light produced in the light emitting layer.

    摘要翻译： 根据一个实施例，提供了具有基座，安装材料和半导体发光元件的芯片的半导体发光器件。 安装材料设置在基座上。 半导体发光元件的芯片通过安装材料固定在基座上。 半导体发光元件的芯片设置有蓝宝石衬底，有源区域，遮光部分和用于向有源区域提供电力的阳极和阴极电极。 有源区设置在蓝宝石衬底上，并且具有通过提供电力来发光的发光层。 遮光部形成在蓝宝石基板的安装材料侧。 遮光部防止由发光层产生的光照射安装材料。

    COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    3.
    发明申请
    COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US20080061303A1

    公开(公告)日：2008-03-13

    申请号：US11850377

    申请日：2007-09-05

    申请人： Takayuki MATSUYAMA ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

    发明人： Takayuki MATSUYAMA ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

    IPC分类号： H01L29/20 ,  H01L21/304

    CPC分类号： H01L21/3043 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

    摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

    摘要翻译： 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。 第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。 第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。

    Compound semiconductor device and method for manufacturing same
    5.
    发明授权
    Compound semiconductor device and method for manufacturing same 有权
    化合物半导体器件及其制造方法

    公开(公告)号：US07968430B2

    公开(公告)日：2011-06-28

    申请号：US11850377

    申请日：2007-09-05

    申请人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

    发明人： Takayuki Matsuyama ,  Tadaaki Hosokawa ,  Seiji Iida ,  Akira Tanaka

    IPC分类号： H01L21/00

    CPC分类号： H01L21/3043 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

    摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.

    摘要翻译： 化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。 层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。 第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。 第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。 在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。