公开(公告)号：US06204511B1

公开(公告)日：2001-03-20

申请号：US09192311

申请日：1998-11-16

申请人： Masamitsu Itoh ,  Shunko Magoshi ,  Shinji Sato

发明人： Masamitsu Itoh ,  Shunko Magoshi ,  Shinji Sato

IPC分类号： H01J3730

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3174

摘要： In the electron beam drawing method, the optimal irradiation amount of an electron beam in accordance with a drawing area ratio at each of drawing positions, is obtained prior to drawing a desired pattern by irradiating an electron beam on a sample. The optimal irradiation amount obtained is separated in a plurality of gradations as a correction amount for a reference irradiation amount of the electron beam. This separation is made finer as the drawing area ratio is higher. The representative correction amount data is determined for each of the plurality of gradations. The representative correction amount data determined is stored for each of the plurality of gradations, and a pattern is drawn on a sample with the optical irradiation amount corresponding to read data of the representative correction amount stored.

摘要翻译： 在电子束拉制法中，通过在样品上照射电子束，在绘制期望的图案之前，获得根据每个拉伸位置处的拉伸面积比的电子束的最佳照射量。 将获得的最佳照射量作为电子束的基准照射量的校正量以多个灰度分离。 随着拉伸面积比越高，这种分离越细。 为多个灰度中的每一个确定代表校正量数据。 针对多个灰度中的每一个存储确定的代表校正量数据，并且在存储有代表校正量的读取数据的光照射量的样本上绘制图案。

公开(公告)号：US06835942B2

公开(公告)日：2004-12-28

申请号：US10602670

申请日：2003-06-25

申请人： Shunko Magoshi ,  Shinji Sato

发明人： Shunko Magoshi ,  Shinji Sato

IPC分类号： H01J37302

CPC分类号： H01J37/3175 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/31769

摘要： A method for correcting a proximity effect applied to a dose of an electron beam exposure, includes classifying an underlying pattern of a level underlying a thin film layer; dividing a processing pattern to be transferred on the thin film layer into a first pattern overlapping with the underlying pattern and a second pattern which does not overlap with the underlying pattern according to the classified underlying pattern; calculating a pattern area density for the first and second patterns in a unit region; and calculating a corrected dose for the processing pattern according to the pattern area density.

公开(公告)号：US5994030A

公开(公告)日：1999-11-30

申请号：US30888

申请日：1998-02-26

申请人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174

摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

公开(公告)号：US06316163B1

公开(公告)日：2001-11-13

申请号：US09163421

申请日：1998-09-30

申请人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

发明人： Shunko Magoshi ,  Masamitsu Itoh ,  Shinji Sato ,  Soichi Inoue ,  Kazuyoshi Sugihara ,  Katsuya Okumura

IPC分类号： G03F900

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/78 ,  G03F7/7045 ,  H01J37/3174

摘要： A method for forming patterns, in which pattern transfer to the same photosensitive material on a first layer is carried out using both light exposure and charged particle beam exposure, comprises the steps of performing a predetermined geometric operation between data associated with a pattern to be transferred to the first layer and data associated with a pattern to be transferred to a second layer different from the first layer, separating the pattern data associated with the pattern to be transferred to the first layer into first exposure pattern data for charged particle beam exposure and second exposure pattern data for light exposure, and performing pattern transfer on to the first layer based on the result of the separation.

摘要翻译： 一种用于形成图案的方法，其中使用曝光和带电粒子束曝光两者进行对第一层上的相同感光材料的图案转印，包括以下步骤：在与待转印图案相关联的数据之间执行预定的几何运算 将与要传送到不同于第一层的第二层的图案相关联的数据相关联的数据与将要传送到第一层的图案相关联的图案数据分离成用于带电粒子束曝光的第一曝光图案数据和第二层 用于曝光的曝光图案数据，以及基于分离结果将图案转印到第一层上。

公开(公告)号：US6093931A

公开(公告)日：2000-07-25

申请号：US410018

申请日：1999-10-01

申请人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

发明人： Kazuyoshi Sugihara ,  Hiromi Niiyama ,  Shunko Magoshi ,  Atsushi Ando ,  Tetsuro Nakasugi ,  Shinji Sato ,  Yumi Watanabe ,  Yosimitu Kato ,  Toru Shibata ,  Katsuya Okumura

IPC分类号： H01L21/027 ,  G03F7/20 ,  H01J37/317 ,  H01J37/30

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/203 ,  G03F7/2059 ,  G03F7/7045 ,  H01J37/3174

摘要： A rough pattern exceeding the resolution limit of light exposure is formed by light resolution. A fine pattern not exceeding the resolution limit of light exposure is formed by charge-beam exposure. Combining the rough pattern and the fine pattern produces a desired pattern. The sharing of the work between light exposure and charge-beam exposure exhibits the high throughput of light exposure and the excellent resolving power of charge-beam exposure.

摘要翻译： 通过光分辨率形成超过曝光分辨率极限的粗糙图案。 通过电荷束曝光形成不超过曝光的分辨率极限的精细图案。 结合粗糙图案和精细图案产生期望的图案。 曝光和电荷束曝光之间的工作共享表现出高曝光量和电荷束曝光的优异分辨能力。

公开(公告)号：US06020107A

公开(公告)日：2000-02-01

申请号：US159644

申请日：1998-09-24

申请人： Hiromi Niiyama ,  Shinji Sato ,  Shunko Magoshi

发明人： Hiromi Niiyama ,  Shinji Sato ,  Shunko Magoshi

IPC分类号： G03F7/38 ,  G03F7/004 ,  G03F7/20 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/7045 ,  G03F7/0045 ,  G03F7/2022

摘要： A rough pattern is formed on a chemically amplified resist by light exposing, and a fine pattern is formed by EB exposing. The resist is heated not only after EB exposing but also after light exposing. After this, the resist on which the rough and the fine patterns are formed is developed. As a result of this, diffusion or deactivation of an acid can be suppressed, and dimensional errors can be reduced.

摘要翻译： 通过曝光在化学放大抗蚀剂上形成粗糙图案，通过EB曝光形成精细图案。 抗蚀剂不仅在EB曝光之后而且在曝光后也被加热。 之后，形成粗糙和精细图案形成的抗蚀剂。 结果，可以抑制酸的扩散或失活，并且可以降低尺寸误差。

公开(公告)号：US08206895B2

公开(公告)日：2012-06-26

申请号：US12179198

申请日：2008-07-24

申请人： Ikuo Yoneda ,  Shunko Magoshi

发明人： Ikuo Yoneda ,  Shunko Magoshi

IPC分类号： G03F7/207

CPC分类号： G03F7/0035

摘要： According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.

摘要翻译： 根据本发明的一个方面，提供了一种用于形成图案的方法，包括：将光敏树脂施加到晶片衬底上的膜上; 将感光性树脂部分地曝光并使感光性树脂显影，形成具有开口部的第一图案; 将光可固化材料施加到由第一图案的开口部分暴露的薄膜上; 使具有形成在所述一个面上的第二图案的光学透射模板的一个面与所述光固化材料接触，所述第二图案包括突起和折入物; 用光照射光固化材料; 并将模板与可光固化材料分离。

公开(公告)号：US07079994B2

公开(公告)日：2006-07-18

申请号：US09912398

申请日：2001-07-26

申请人： Ryoichi Inanami ,  Shunko Magoshi ,  Katsuya Okumura

发明人： Ryoichi Inanami ,  Shunko Magoshi ,  Katsuya Okumura

IPC分类号： G06G7/34 ,  G06F7/02 ,  G06F9/44 ,  G06F15/82

CPC分类号： H01J37/3026 ,  G06Q20/20 ,  H01J2237/31762 ,  Y02P90/265

摘要： A user is requested to input specifications of a semiconductor device. Based on the specifications, a plurality of circuit patterns are generated by a CP method, and a design parameter is calculated for each of the circuit patterns. The user is provided with information of the plurality of circuit patterns together with the design parameters. The user selects a desired circuit pattern, whereas the server calculates manufacturing costs of the device and presents them to the user. The user checks the costs and then places an order.

公开(公告)号：US20100021848A1

公开(公告)日：2010-01-28

申请号：US12179198

申请日：2008-07-24

申请人： Ikuo Yoneda ,  Shunko Magoshi

发明人： Ikuo Yoneda ,  Shunko Magoshi

IPC分类号： G03F7/20

CPC分类号： G03F7/0035

摘要： According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material.

摘要翻译： 根据本发明的一个方面，提供了一种用于形成图案的方法，包括：将光敏树脂施加到晶片衬底上的膜上; 将感光性树脂部分地曝光并使感光性树脂显影，形成具有开口部的第一图案; 将光可固化材料施加到由第一图案的开口部分暴露的薄膜上; 使具有形成在所述一个面上的第二图案的光学透射模板的一个面与所述光固化材料接触，所述第二图案包括突起和折入物; 用光照射光固化材料; 并将模板与可光固化材料分离。

公开(公告)号：US20060214116A1

公开(公告)日：2006-09-28

申请号：US11378471

申请日：2006-03-20

申请人： Shunko Magoshi

发明人： Shunko Magoshi

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A exposure apparatus includes a charged beam radiating unit configured to radiate a charged beam, a shaping unit including an opening for shaping the beam, a storage unit to store a history of data concerning a beam area of the beam on the shaping unit, a predicting unit to predict change amount of dimensions of the beam passing through the opening to design dimensions of the opening, the predicting the change amount being carried out based on a relation between the beam area previously prepared and change amount of the dimensions of the beam passing through the opening to the design dimensions of the opening, and a correcting unit to correct dimension of a pattern which corresponds to the beam and is to be formed on the sample based on the change amount predicted by the predicting unit.

摘要翻译： 曝光装置包括被配置为辐射带电束的带电波束辐射单元，包括用于使波束成形的开口的整形单元，存储单元，用于存储关于波束在成形单元上的波束面积的数据历史，预测 单元，用于预测通过开口的光束的尺寸的变化量以设计开口的尺寸，基于先前准备的光束面积与通过的光束的尺寸的变化量之间的关系来预测正在执行的变化量 基于所述预测单元所预测的变化量的校正单元，其对应于所述光束并形成在样本上的图案的尺寸进行校正。