公开(公告)号：US20110212558A1

公开(公告)日：2011-09-01

申请号：US13101766

申请日：2011-05-05

申请人： Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Gen Fujii ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Gen Fujii ,  Hideaki KUWABARA

IPC分类号： H01L21/336

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13415 ,  G02F2001/136295 ,  H01L27/1292

摘要： As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.

摘要翻译： 由于重复膜形成和蚀刻，衬底越来越大，制造时间增加; 蚀刻剂等的废物处理成本增加; 材料效率显着降低。 在本发明中形成了用于改善基板和通过液滴喷射方法形成的材料层之间的粘附性的基膜。 此外，根据本发明的液晶显示装置的制造方法包括至少一个步骤，用于形成在不使用光掩模的情况下制造液晶显示装置所需的以下图案：以布线为代表的材料层的图案（或 电极）图案，绝缘层图案; 或用于形成另一图案的掩模图案。

公开(公告)号：US20100311197A1

公开(公告)日：2010-12-09

申请号：US12857809

申请日：2010-08-17

申请人： Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Gen FUJII ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Gen FUJII ,  Hideaki KUWABARA

IPC分类号： H01L21/336 ,  H01L33/00

CPC分类号： G02F1/13458 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13415 ,  G02F2001/136295 ,  H01L27/1292

摘要： As a substrate gets larger, time of manufacture is increased due to the repetition of film formations and etchings; waste disposal costs of etchant and the like are increased; and material efficiency is significantly reduced. A base film for improving adhesion between a substrate and a material layer formed by a droplet discharge method is formed in the invention. Further, a manufacturing method of a liquid crystal display device according to the invention includes at least one step for forming the following patterns required for manufacturing a liquid crystal display device without using a photomask: a pattern of a material layer typified by a wiring (or an electrode) pattern, an insulating layer pattern; or a mask pattern for forming another pattern.

摘要翻译： 由于重复膜形成和蚀刻，衬底越来越大，制造时间增加; 蚀刻剂等的废物处理成本增加; 材料效率显着降低。 在本发明中形成了用于改善基板和通过液滴喷射方法形成的材料层之间的粘附性的基膜。 此外，根据本发明的液晶显示装置的制造方法包括至少一个步骤，用于形成在不使用光掩模的情况下制造液晶显示装置所需的以下图案：以布线为代表的材料层的图案（或 电极）图案，绝缘层图案; 或用于形成另一图案的掩模图案。

公开(公告)号：US20090279012A1

公开(公告)日：2009-11-12

申请号：US12504840

申请日：2009-07-17

申请人： Hideaki KUWABARA ,  Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Osamu NAKAMURA

发明人： Hideaki KUWABARA ,  Shunpei YAMAZAKI ,  Shinji MAEKAWA ,  Osamu NAKAMURA

IPC分类号： G02F1/136 ,  H01L27/12

CPC分类号： H01L21/288 ,  G02F1/136286 ,  G09G3/3208 ,  G09G2310/0275 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/42384 ,  H01L29/66765 ,  Y02P80/30

摘要： It is conceivable that the problem that a signal is delayed by resistor of a wiring in producing a display which displays large area becomes remarkable. The present invention provides a manufacturing process using a droplet discharge method suitable for a large-sized substrate.In the present invention, after forming a base layer 11 (or base pretreatment) which enhances adhesiveness over a substrate in advance and forming an insulating film, a mask having a desired pattern shape is formed, and a desired depression is formed by using the mask. A metal material is filled in the depression having a mask 13 and a sidewall made from an insulating film by a droplet discharge method to form an embedded wiring (a gate electrode, a capacitor wiring, lead wiring or the like. Afterwards, it is flattened by a planarization processing, for example, a press or a CMP processing.

摘要翻译： 可以想到，在制作显示大面积的显示器时，由布线的电阻器延迟信号的问题变得显着。 本发明提供一种使用适合于大尺寸基板的液滴喷射方法的制造方法。 在本发明中，在形成预先形成基板上的粘合性的基底层11（或基底预处理）之后，形成绝缘膜的情况下，形成具有期望的图案形状的掩模，通过使用掩模 。 通过液滴喷射法将金属材料填充在具有掩模13和由绝缘膜制成的侧壁的凹部中，以形成嵌入布线（栅极电极，电容器布线，引线布线等），然后将其平坦化 通过平坦化处理，例如压制或CMP处理。

公开(公告)号：US20110165741A1

公开(公告)日：2011-07-07

申请号：US13050117

申请日：2011-03-17

申请人： Shunpei YAMAZAKI ,  Osamu NAKAMURA ,  Shinji MAEKAWA ,  Gen FUJII ,  Toshiyuki ISA

发明人： Shunpei YAMAZAKI ,  Osamu NAKAMURA ,  Shinji MAEKAWA ,  Gen FUJII ,  Toshiyuki ISA

IPC分类号： H01L21/336

CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

公开(公告)号：US20080012076A1

公开(公告)日：2008-01-17

申请号：US11857729

申请日：2007-09-19

申请人： Shunpei YAMAZAKI ,  Osamu NAKAMURA ,  Shinji MAEKAWA ,  Gen FUJII ,  Toshiyuki ISA

发明人： Shunpei YAMAZAKI ,  Osamu NAKAMURA ,  Shinji MAEKAWA ,  Gen FUJII ,  Toshiyuki ISA

IPC分类号： H01L29/786 ,  G03B13/00

CPC分类号： H01L51/0022 ,  G09G3/3208 ,  G09G3/3225 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2310/0251 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/055 ,  H01L51/529

摘要： The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for forming a pattern such as a wiring, that is used for forming a display device, to have a predetermined shape with an excellent controllability. The method for manufacturing a display device includes the steps of: forming a lyophobic region; selectively irradiating laser beam in the lyophobic region to form a lyophilic region; selectively discharging a composition, that contains a conductive material, in the lyophilic region to form a gate electrode layer; forming a gate insulating layer and a semiconductor layer over the gate electrode layer; discharging a composition containing a conductive material over the semiconductor layer to form a source electrode layer and a drain electrode layer; and forming a pixel electrode layer on the source or drain electrode layer.

摘要翻译： 本发明提供一种显示装置及其制造方法，其通过有效地增加材料以及简化步骤来制造。 此外，本发明提供了一种用于形成用于形成显示装置的布线等图案以具有优异的可控性的预定形状的技术。 制造显示装置的方法包括以下步骤：形成疏液区域; 选择性地将激光束照射在疏液区域以形成亲液性区域; 选择性地将含有导电材料的组合物在亲液区域中排出以形成栅极电极层; 在栅电极层上形成栅极绝缘层和半导体层; 在半导体层上排出含有导电材料的组合物，以形成源电极层和漏电极层; 以及在源极或漏极电极层上形成像素电极层。

公开(公告)号：US20120299001A1

公开(公告)日：2012-11-29

申请号：US13488926

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized,

摘要翻译： [问题]在传统的液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器，

公开(公告)号：US20090170227A1

公开(公告)日：2009-07-02

申请号：US12362461

申请日：2009-01-29

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hideaki KUWABARA

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： G03F1/66 ,  C23C14/042 ,  G03F7/70741 ,  H01L51/0011

摘要： The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates.

摘要翻译： 本发明提供了具有高掩模精度的大掩模，用于在具有大表面积的基板上进行选择性沉积。 根据本发明，掩模体固定在布置在通过荫罩框架的宽度的热膨胀中心的线上的固定位置。 此外，根据本发明，通过在X方向或Y方向移动沉积源来固定基板和掩模体并进行沉积。 包括在X方向或Y方向上移动沉积源的方法适合于沉积在大的衬底上。

公开(公告)号：US20090140438A1

公开(公告)日：2009-06-04

申请号：US12325474

申请日：2008-12-01

申请人： Shunpei YAMAZAKI ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Hideaki KUWABARA

IPC分类号： H01L23/535 ,  H01L21/027

CPC分类号： H01L29/42384 ,  G02F1/13458 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78696

摘要： Wirings each having a side face with a different angle, which is made accurately, in a desired portion over one mother glass substrate are provided without increasing the steps. With the use of a multi-tone mask, a photoresist layer is formed, which has a tapered shape in which the area of a cross section is reduced gradually in a direction away from one mother glass substrate. At the time of forming one wiring, one photomask is used and a metal film is selectively etched, whereby one wiring having a side face, the shape (specifically, an angle with respect to a principal plane of a substrate) of which is different depending on a place, is obtained.

摘要翻译： 在不增加步骤的情况下，提供各自具有在一个母玻璃基板上的期望部分中准确地制成具有不同角度的侧面的布线。 通过使用多色调掩模，形成光致抗蚀剂层，其具有锥形形状，其中横截面的面积在远离一个母玻璃基板的方向上逐渐减小。 在形成一个布线时，使用一个光掩模，并且选择性地蚀刻金属膜，由此一个布线具有侧面，其形状（具体地，相对于基板的主平面的角度）根据 在某个地方获得。

公开(公告)号：US20120300151A1

公开(公告)日：2012-11-29

申请号：US13567327

申请日：2012-08-06

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Tatsuya TAKAHASHI

IPC分类号： H01L27/15 ,  G02F1/136

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US20120086042A1

公开(公告)日：2012-04-12

申请号：US13234416

申请日：2011-09-16

申请人： Shunpei YAMAZAKI ,  Satoshi SEO ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Satoshi SEO ,  Hideaki KUWABARA

IPC分类号： H01L33/62

CPC分类号： H01L27/3206 ,  H01L27/322 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

摘要： A light-emitting device structured so as to increase the amount of light taken out in a certain direction is provided as well as a method of manufacturing this light emitting device. As a result of etching treatment, an upper edge portion of an insulator (19) is curved to have a radius of curvature, a slope is formed along the curved face while partially exposing layers (18c and 18d) of a first electrode, and a layer (18b) of the first electrode is exposed in a region that serves as a light emitting region. Light emitted from an organic compound layer (20) is reflected by the slope of the first electrode (layers 18c and 18d) to increase the total amount of light taken out in the direction indicated by the arrow in FIG. 1A.

摘要翻译： 提供了一种构造为增加沿一定方向取出的光量的发光器件以及制造该发光器件的方法。 作为蚀刻处理的结果，绝缘体（19）的上边缘部分被弯曲成具有曲率半径，沿着弯曲面形成斜面，同时部分地暴露第一电极的层（18c和18d），并且 第一电极的层（18b）暴露在用作发光区域的区域中。 从有机化合物层（20）发射的光被第一电极（层18c和18d）的斜率反射，以增加沿图1中箭头所示方向取出的光的总量。 1A。