利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

692 条记录 (耗时 0.041 秒)

    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
    1.
    发明授权
    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
    激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备

    公开(公告)号：US08044372B2

    公开(公告)日：2011-10-25

    申请号：US11812557

    申请日：2007-06-20

    申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    IPC分类号： G21G1/00

    CPC分类号： H01L21/02683 ,  B23K26/0823 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  Y10S438/973

    摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

    摘要翻译： 提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。 激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。 所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动 。

    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
    2.
    发明申请
    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
    激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备

    公开(公告)号：US20070246664A1

    公开(公告)日：2007-10-25

    申请号：US11812557

    申请日：2007-06-20

    申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    IPC分类号： G01N21/00

    CPC分类号： H01L21/02683 ,  B23K26/0823 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  Y10S438/973

    摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

    摘要翻译： 提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。 激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。 所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动 。

    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment
    3.
    发明授权
    Laser apparatus, laser irradiation method, semiconductor manufacturing method, semiconductor device, and electronic equipment 有权
    激光装置，激光照射方法，半导体制造方法，半导体装置和电子设备

    公开(公告)号：US07589032B2

    公开(公告)日：2009-09-15

    申请号：US10237172

    申请日：2002-09-09

    申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    IPC分类号： H01L21/26

    CPC分类号： H01L21/02683 ,  B23K26/0823 ,  B23K2101/40 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  Y10S438/973

    摘要： Continuous wave laser apparatus with enhanced processing efficiency is provided as well as a method of manufacturing a semiconductor device using the laser apparatus. The laser apparatus has: a laser oscillator; a unit for rotating a process object; a unit for moving the center of the rotation along a straight line; and an optical system for processing laser light that is outputted from the laser oscillator to irradiate with the laser light a certain region within the moving range of the process object. The laser apparatus is characterized in that the certain region is on a line extended from the straight line and that the position at which the certain region overlaps the process object is moved by rotating the process object while moving the center of the rotation along the straight line.

    摘要翻译： 提供了具有增强的处理效率的连续波激光装置以及使用该激光装置的半导体装置的制造方法。 激光装置具有：激光振荡器; 用于旋转过程对象的单元; 沿着直线移动旋转中心的单元; 以及用于处理从激光振荡器输出的激光的光学系统，用于将激光照射到处理对象的移动范围内的特定区域。 所述激光装置的特征在于，所述特定区域处于从所述直线延伸的线上，并且所述特定区域与所述加工对象重叠的位置通过使所述加工对象旋转而沿着所述直线移动所述旋转中心而被移动 。

    Method of manufacturing a semiconductor device
    6.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06962860B2

    公开(公告)日：2005-11-08

    申请号：US10289219

    申请日：2002-11-07

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Akihisa Shimomura ,  Mai Akiba

    IPC分类号： G02F1/1368 ,  B23K26/073 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

    CPC分类号： H01L21/02691 ,  B23K26/0732 ,  B23K26/0736 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01L21/67282 ,  H01L21/67294 ,  H01L27/1285

    摘要： To provide a continuous-oscillating laser apparatus capable of improving the efficiency of substrate treatment, a method of irradiating a laser beam, and a method of manufacturing a semiconductor device using the laser apparatus. Of the entire semiconductor film, a portion that needs to be left on the substrate after patterning is identified according to a mask. Then, a portion to be scanned by respective lasers are defined, so that a laser beam is irradiated twice in different scanning directions to a portion to be obtained at least through patterning and beam spots are impinged upon the scanned portion, thereby partially crystallizing the semiconductor film. In other words, in the invention, it is arranged in such a manner that a laser beam is not irradiated by scanning a laser beam across the entire semiconductor film but by scanning a laser beam twice at least to the absolutely necessary portion. According to the above arrangement, it is possible to save the time to irradiate a laser beam in waste to the semiconductor film at a portion to be removed through patterning, and the crystalline characteristics of the semiconductor film obtained after the patterning can be further enhanced.

    摘要翻译： 为了提供能够提高基板处理效率的连续振荡激光装置，照射激光的方法以及使用该激光装置制造半导体装置的方法。 在整个半导体膜中，根据掩模来识别在图案化之后需要留在基板上的部分。 然后，定义要由相应激光器扫描的部分，使得激光束在不同的扫描方向上被照射到要获得的部分两次，至少通过图案化并且光束点被照射在扫描部分上，从而部分地使半导体 电影。 换句话说，在本发明中，其布置成使得激光束不通过扫描整个半导体膜上的激光束而被照射，而是通过至少对绝对必需部分进行两次扫描激光束而被照射。 根据上述结构，通过图案化，可以节省在要除去的部分向半导体膜照射浪费的激光的时间，并且可以进一步提高在图案化之后获得的半导体膜的结晶特性。

    Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film
    7.
    发明授权
    Manufacturing method for a thin film transistor that uses a pulse oscillation laser crystallize an amorphous semiconductor film 有权
    使用脉冲振荡激光器的薄膜晶体管的制造方法使非晶半导体膜结晶化

    公开(公告)号：US07510920B2

    公开(公告)日：2009-03-31

    申请号：US11285012

    申请日：2005-11-23

    申请人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

    发明人： Shunpei Yamazaki ,  Akihisa Shimomura ,  Hisashi Ohtani ,  Masaaki Hiroki ,  Koichiro Tanaka ,  Aiko Shiga ,  Mai Akiba ,  Kenji Kasahara

    IPC分类号： H01L21/84

    CPC分类号： H01L21/02686 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/2026 ,  H01L23/544 ,  H01L27/1285 ,  H01L29/04 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Position control of a crystal grain in accordance with an arrangement of a TFT is achieved, and at the same time, a processing speed during a crystallization process is increased. More specifically, there is provided a manufacturing method for a semiconductor device, in which crystal having a large grain size can be continuously formed through super lateral growth that is artificially controlled and substrate processing efficiency during a laser crystallization process can be increased. In the manufacturing method for a semiconductor device, instead of performing laser irradiation on an entire semiconductor film within a substrate surface, a marker as a reference for positioning is formed so as to crystallize at least an indispensable portion at minimum. Thus, a time period required for laser crystallization can be reduced to make it possible to increase a processing speed for a substrate. The above structure is applied to a conventional SLS method, so that it is possible to solve a problem inherent to the conventional SLS method, in that the substrate processing efficiency is poor.

    摘要翻译： 实现了根据TFT的布置的晶粒的位置控制，并且同时提高了结晶过程中的处理速度。 更具体地，提供了一种半导体器件的制造方法，其中可以通过人工控制的超横向生长连续地形成具有大晶粒尺寸的晶体，并且可以增加激光晶化过程中的衬底处理效率。 在半导体器件的制造方法中，代替对基板表面内的整个半导体膜进行激光照射，形成用于定位的基准的标记，以至少使至少不可缺少的部分结晶。 因此，可以减少激光结晶所需的时间，从而可以提高基板的处理速度。 上述结构应用于传统的SLS方法，从而可以解决常规SLS方法固有的问题，因为衬底处理效率差。

    Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment
    10.
    发明授权
    Laser apparatus, laser irradiation method, manufacturing method for a semiconductor device, semiconductor device and electronic equipment 有权
    激光装置，激光照射方法，半导体装置的制造方法，半导体装置和电子设备

    公开(公告)号：US06844523B2

    公开(公告)日：2005-01-18

    申请号：US10235942

    申请日：2002-09-06

    申请人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura

    发明人： Shunpei Yamazaki ,  Koichiro Tanaka ,  Hidekazu Miyairi ,  Aiko Shiga ,  Akihisa Shimomura

    IPC分类号： B23K26/08 ,  H01L26/00

    CPC分类号： B23K26/0823 ,  B23K2101/36

    摘要： To provide a continuous oscillation laser apparatus, and a manufacturing method of a semiconductor device using the continuous oscillation laser apparatus, which can enhance processing efficiency. A laser apparatus according to the present invention includes: a laser oscillation apparatus; a unit for rotating an object to be processed; a unit for moving the object to be processed toward a center of the rotation or toward an outside from the center; and an optical system for processing a laser light outputted from the laser oscillation apparatus and irradiating the processed laser light to a definite region in a moving range of the object to be processed, in which, while the object to be processed is rotated, the object to be processed is moved toward the center of the rotation or toward the outside from the center to move a position where the definite region and the object to be processed overlap.

    摘要翻译： 提供一种连续振荡激光装置，以及使用该连续振荡激光装置的半导体装置的制造方法，能够提高处理效率。 根据本发明的激光装置包括：激光振荡装置; 用于旋转待处理物体的单元; 用于从所述中心朝向所述旋转中心或朝向外部移动被处理物体的单元; 以及光学系统，用于处理从激光振荡装置输出的激光，并将经处理的激光照射到待处理物体的移动范围内的确定区域，其中，当被处理物体旋转时，物体 被处理的物体从中心朝向旋转的中心或朝向外部移动，以移动定影区域和被处理物体重叠的位置。