公开(公告)号：US08305509B2

公开(公告)日：2012-11-06

申请号：US12908243

申请日：2010-10-20

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC分类号： G02F1/136 ,  G02F1/1345

CPC分类号： G02F1/1345 ,  G02F2202/104 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

摘要翻译： 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中，第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管， 第二基板，介于第一基板和第二基板之间的液晶层，以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中，晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸，第一基板被附着到第二基板，使得第一基板被暴露， 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上，并且第三基板的短边长度为1〜6mm，短边长度为 第一区域为0.5至1mm。

公开(公告)号：US07935958B2

公开(公告)日：2011-05-03

申请号：US11547632

申请日：2005-10-18

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L29/08

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C13/00 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  H01L27/285 ,  H01L51/0051 ,  H01L51/0059

摘要： The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.

摘要翻译： 本发明提供一种半导体器件，其具有其中有机化合物层夹在一对导电层之间的简单结构的存储元件和这种半导体器件的制造方法。 利用该特征，提供了具有非易失性，可追加记录和容易制造的存储电路的半导体器件和这种半导体器件的制造方法。 根据本发明的半导体器件具有设置在绝缘层上的多个场效应晶体管和设置在多个场效应晶体管上的多个存储元件。 多个场效应晶体管中的每一个使用单晶半导体层作为沟道部分，并且多个存储元件中的每一个是其中堆叠第一导电层，有机化合物层和第二导电层的元件 为了。

公开(公告)号：US20080135627A1

公开(公告)日：2008-06-12

申请号：US11795859

申请日：2006-01-26

申请人： Yumiko Noda ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya ,  Shunpei Yamazaki

发明人： Yumiko Noda ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya ,  Shunpei Yamazaki

IPC分类号： G06K19/07 ,  H01L21/84

CPC分类号： H01L27/1266 ,  G06K19/077 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/13 ,  H01L27/144

摘要： It is an object of the present invention to provide a device suitable for new usage by making use of a semiconductor device such as an RFID tag in terms of the capability to transmit and receive data without being contacted therewith, to decrease a burden on a user, and to improve convenience. A semiconductor device is provided to have an arithmetic processing circuit including a transistor, a conductive layer serving as an antenna, a detecting unit having a means for detecting physical quantity or chemical quantity, and a storage unit for storing data detected by the detecting unit, and to cover the arithmetic processing circuit, the conductive layer, the detecting unit, and the storage unit with a protective layer. In addition, diverse information can be monitored and controlled by providing such a semiconductor device for human beings, animals and plants, or the like without being contacted therewith.

摘要翻译： 本发明的目的是提供一种适用于新用途的装置，其方法是利用诸如RFID标签的半导体装置在不与其接触的情况下发送和接收数据的能力，以减轻用户的负担 ，并提高方便性。 提供一种半导体器件，具有包括晶体管，用作天线的导电层，具有检测物理量或化学物质的装置的检测单元的运算处理电路，以及用于存储由检测单元检测的数据的存储单元， 并且用保护层覆盖算术处理电路，导电层，检测单元和存储单元。 此外，通过为人类，动物和植物等提供这种半导体器件而不与其接触，可以监测和控制各种信息。

公开(公告)号：US07307029B2

公开(公告)日：2007-12-11

申请号：US11410234

申请日：2006-04-25

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC分类号： H01L21/26

CPC分类号： H01L21/67115 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/5093 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32761 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/67784 ,  H01L21/6838

摘要： A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.

摘要翻译： 提供了等离子体处理装置和等离子体处理方法，其可以准确地控制等离子体和被处理物体之间的距离（以下称为对象），并且促进宽度较薄的基板的输送 并长大。 本发明的等离子体处理装置设置有用于在大气压或大气压下将处理气体引入第一电极和第二电极之间的位置的气体供给装置; 等离子体产生装置，用于在引入处理气体的条件下，通过向第一电极或第二电极施加高频电压来产生等离子体; 以及用于通过将处理气体或输送气体吹送到物体而使物体浮起来来运送物体的运送装置。 蚀刻处理; 灰化治疗; 薄膜形成; 或者通过移动第一电极和第二电极之间的相对位置以及物体来执行使用第一电极和第二电极的部件的清洁处理。

公开(公告)号：US20070052907A1

公开(公告)日：2007-03-08

申请号：US11538907

申请日：2006-10-05

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC分类号： G02F1/1345

CPC分类号： G02F1/1345 ,  G02F2202/104 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

摘要翻译： 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中，第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管， 第二基板，介于第一基板和第二基板之间的液晶层，以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中，晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸，第一基板被附着到第二基板，使得第一基板被暴露， 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上，并且第三基板的短边长度为1〜6mm，短边长度为 第一区域为0.5至1mm。

公开(公告)号：US07183146B2

公开(公告)日：2007-02-27

申请号：US10757167

申请日：2004-01-13

申请人： Shunpei Yamazaki ,  Yasuko Watanabe ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Yasuko Watanabe ,  Yasuyuki Arai

IPC分类号： H01L21/00

CPC分类号： H01L21/288 ,  G02F1/136286 ,  H01L21/6715 ,  H01L21/76838 ,  H01L21/76877 ,  H01L27/1255 ,  H01L27/1292 ,  H01L27/3244 ,  H01L51/0004 ,  H01L51/0021 ,  H01L51/56

摘要： To provide a method for manufacturing a wiring, a conductive layer, a display device, and a semiconductor device, each of which can meet a large sized substrate and which is manufactured with a higher throughput by using a material efficiently, the conductive layer is formed over the substrate having an insulating surface by discharging the conductive material, and heat treatment is performed by a lamp or a laser beam over the conductive layer. Furthermore, the conductive film is formed under reduced pressure according to the present invention.

摘要翻译： 为了提供一种制造布线，导电层，显示装置和半导体器件的方法，其可以满足大尺寸基板并且通过有效地使用材料以更高的生产量制造，形成导电层 通过排出导电材料而具有绝缘表面的衬底上，并且通过灯或激光束在导电层上进行热处理。 此外，根据本发明，在减压下形成导电膜。

公开(公告)号：US07064089B2

公开(公告)日：2006-06-20

申请号：US10731484

申请日：2003-12-10

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC分类号： H01L21/26

CPC分类号： H01L21/67115 ,  C23C16/45519 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4583 ,  C23C16/46 ,  C23C16/5093 ,  C23C16/513 ,  C23C16/54 ,  H01J37/32761 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67748 ,  H01L21/67784 ,  H01L21/6838

摘要： A plasma treatment apparatus and a method for plasma treatment are provided that made possible to control accurately a distance between plasma and an object to be treated (hereinafter referred to as an object), and that facilitated a transportation of a substrate that a width is thin and grown in size. The plasma treatment apparatus of the present invention is provided with a gas supply means for introducing a processing gas into a place between a first electrode and a second electrode under an atmospheric pressure or around atmospheric pressure; a plasma generation means for generating plasma by applying a high frequency voltage to the first electrode or the second electrode under the condition that the processing gas is introduced; and, a transport means for transporting the object by floating the object by blowing the processing gas or a transporting gas to the object. An etching treatment; an ashing treatment; a thin film formation; or a cleaning treatment of components using the first electrode and the second electrode is carried out by moving a relative position between the first electrode and the second electrode, and the object.

公开(公告)号：US20050024339A1

公开(公告)日：2005-02-03

申请号：US10788255

申请日：2004-02-27

申请人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Aya Anzai ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

发明人： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Aya Anzai ,  Hiromichi Godo ,  Junichiro Sakata ,  Kaoru Tsuchiya

IPC分类号： G06F1/16 ,  G06F3/14 ,  H01L27/32 ,  H01L51/52 ,  H04M1/02 ,  H04M1/725 ,  G09G5/00

CPC分类号： H01L27/3267 ,  G06F1/1616 ,  G06F1/1637 ,  G06F1/1647 ,  G06F1/1677 ,  G06F1/1686 ,  G06F3/1423 ,  G06F2200/1614 ,  G09G2300/023 ,  G09G2340/0492 ,  H01L27/3209 ,  H01L27/3234 ,  H01L51/5262 ,  H01L51/5281 ,  H01L2251/5323 ,  H01L2251/558 ,  H04M1/0214 ,  H04M1/0245 ,  H04M1/72519 ,  H04M2250/16

摘要： It is an object to provide a highly functioned and highly value-added display device and mobile terminal. It is another object to provide a display device and mobile terminal characterized by including a plurality of pixels arranged in a matrix form and a first display screen over one surface of a substrate having a translucency, a second display screen over the opposite surface of the one surface of the substrate, each of the plurality of pixels having a light emitting element for emitting light toward the first display screen and the second display screen, and a first polarizer over one surface of the substrate and a second polarizer over the opposite surface of the one surface of the substrate.

摘要翻译： 本发明的目的是提供一种高功能且高附加值的显示设备和移动终端。 另一个目的是提供一种显示装置和移动终端，其特征在于包括以矩阵形式布置的多个像素，以及在具有半透明度的基板的一个表面上的第一显示屏幕，在一个相对表面上的第二显示屏幕 所述多个像素中的每一个具有用于朝向所述第一显示屏和所述第二显示屏发射光的发光元件，以及在所述基板的一个表面上的第一偏振器和位于所述第二显示屏的相对表面上的第二偏振器 衬底的一个表面。

公开(公告)号：US20050001968A1

公开(公告)日：2005-01-06

申请号：US10839754

申请日：2004-05-06

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yasuyuki Arai ,  Yasuko Watanabe

IPC分类号： G02F1/133 ,  G02F1/1345 ,  G02F1/136 ,  G09G3/36 ,  H01S5/00

CPC分类号： G02F1/1345 ,  G02F2202/104 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

摘要翻译： 一种提高生产率的液晶显示装置及其制造方法。 根据本发明的液晶显示装置包括在扫描线和数据线彼此相交的区域中，第一基板包括使用非晶半导体或用于沟道部分的有机半导体的第一薄膜晶体管， 第二基板，介于第一基板和第二基板之间的液晶层，以及包括使用晶体半导体用于沟道部分的第二薄膜晶体管的第三基板。 在本发明的液晶显示装置中，晶体半导体中的晶体晶界沿着第二薄膜晶体管中的电子或空穴的流动延伸，第一基板被附着到第二基板，使得第一基板被暴露， 形成第二薄膜晶体管的第一区域和用于形成输入端子的第二区域和输出端子形成在第三基板上，并且第三基板的短边长度为1〜6mm，短边长度为 第一区域为0.5至1mm。

公开(公告)号：US08227802B2

公开(公告)日：2012-07-24

申请号：US12847352

申请日：2010-07-30

申请人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

发明人： Hiroko Abe ,  Yuji Iwaki ,  Mikio Yukawa ,  Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuko Watanabe ,  Yoshitaka Moriya

IPC分类号： H01L35/24

CPC分类号： H01L51/0579 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/04 ,  H01L27/112 ,  H01L27/115 ,  H01L51/0051 ,  H01L51/0059

摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.

摘要翻译： 本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。 此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。 半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层， 并且存储元件包括第一导电层，有机化合物和第二导电层。 根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。