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公开(公告)号：US20090002591A1
公开(公告)日：2009-01-01
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabrara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译： 本发明的目的是提出具有高质量生产率的液晶显示装置的制造方法，其具有具有高可靠电特性的薄膜晶体管。 在具有反交错薄膜晶体管的液晶显示装置中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源区和漏区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。
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公开(公告)号：US09176353B2
公开(公告)日：2015-11-03
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
CPC分类号： G02F1/1368 , G02F1/133345 , H01L21/67207 , H01L29/41733 , H01L29/66765 , H01L29/78678 , H01L29/78696
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
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公开(公告)号：US09057924B2
公开(公告)日：2015-06-16
申请号：US12213728
申请日：2008-06-24
申请人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
发明人： Shunpei Yamazaki , Yukie Suzuki , Hideaki Kuwabara , Hajime Kimura , Hidekazu Miyairi , Yoshiyuki Kurokawa , Satoshi Kobayashi
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/67
摘要： An object is to propose a method of manufacturing, with high mass productivity, liquid crystal display devices having thin film transistors with highly reliable electric characteristics. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
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公开(公告)号：US07812348B2
公开(公告)日：2010-10-12
申请号：US12390954
申请日：2009-02-23
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
IPC分类号： H01L27/14
CPC分类号： H01L29/78609 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78618 , H01L29/78669
摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
摘要翻译： 解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠 插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。
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公开(公告)号：US07786485B2
公开(公告)日：2010-08-31
申请号：US12390144
申请日：2009-02-20
申请人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
发明人： Koji Dairiki , Hidekazu Miyairi , Yoshiyuki Kurokawa , Shunpei Yamazaki , Hiromichi Godo , Daisuke Kawae , Satoshi Kobayashi
CPC分类号： H01L27/1214 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/66765
摘要： A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.
摘要翻译： 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极区和漏极区，以至少部分地与栅电极重叠，栅极绝缘层介于 栅电极和杂质半导体层; 一对导电层，其至少部分地与所述栅电极和所述杂质半导体层重叠在所述栅极绝缘层上方，并且在沟道长度方向上设置有间隔; 以及与所述栅极绝缘层和所述一对导电层接触并在所述一对导电层之间延伸的非晶半导体层。
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公开(公告)号：US08921858B2
公开(公告)日：2014-12-30
申请号：US12213733
申请日：2008-06-24
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66 , H01L29/49 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765
摘要： In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.
摘要翻译： 在具有反交错薄膜晶体管的发光器件中，反交错薄膜晶体管形成如下：在栅电极上形成栅极绝缘膜; 在栅绝缘膜上形成用作沟道形成区的微晶半导体膜; 在微晶半导体膜上形成缓冲层; 在缓冲层上形成一对源极和漏极区; 并且形成与源区和漏区接触的一对源电极和漏电极，以便露出源区和漏区的一部分。
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7.发明授权公开(公告)号：US08624321B2
公开(公告)日：2014-01-07
申请号：US12398295
申请日：2009-03-05
IPC分类号： H01L23/62
CPC分类号： H01L29/78696 , H01L29/04 , H01L29/66765
摘要： A thin film transistor is provided, which includes a gate insulating layer covering a gate electrode, a microcrystalline semiconductor layer provided over the gate insulating layer, an amorphous semiconductor layer overlapping the microcrystalline semiconductor layer and the gate insulating layer, and a pair of impurity semiconductor layers which are provided over the amorphous semiconductor layer and to which an impurity element imparting one conductivity type is added to form a source region and a drain region. The gate insulating layer has a step adjacent to a portion in contact with an end portion of the microcrystalline semiconductor layer. A second thickness of the gate insulating layer in a portion outside the microcrystalline semiconductor layer is smaller than a first thickness thereof in a portion in contact with the microcrystalline semiconductor layer.
摘要翻译： 提供一种薄膜晶体管，其包括覆盖栅极的栅极绝缘层，设置在栅极绝缘层上的微晶半导体层，与微晶半导体层和栅极绝缘层重叠的非晶半导体层，以及一对杂质半导体 提供在非晶半导体层上并且添加赋予一种导电类型的杂质元素以形成源区和漏区的层。 栅极绝缘层具有与微晶半导体层的端部接触的部分相邻的台阶。 在与微晶半导体层接触的部分中，微晶半导体层外部的栅极绝缘层的第二厚度小于其第一厚度。
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公开(公告)号：US08043901B2
公开(公告)日：2011-10-25
申请号：US12222686
申请日：2008-08-14
IPC分类号： H01L21/00
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译： 本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法 包括在薄膜晶体管中的绝缘膜和半导体膜。 向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。 提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。 具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。
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公开(公告)号：US07888681B2
公开(公告)日：2011-02-15
申请号：US12222672
申请日：2008-08-14
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1233 , H01L27/3262 , H01L29/04 , H01L29/41733 , H01L29/458 , H01L29/78696
摘要： A display device including both an n-channel thin film transistor and a p-channel thin film transistor each having excellent electric characteristics and high reliability is demonstrated, and a method for manufacturing thereof is also provided. The display device includes an inverted-staggered p-channel thin film transistor and an inverted-staggered n-channel thin film transistor in which a gate insulating film, a microcrystalline semiconductor film, and an amorphous semiconductor film are sequentially stacked over a gate electrode. The microcrystalline semiconductor film contains oxygen at a concentration of 1×1016 atoms/cm3 or less. Mobilities of the n-channel thin film transistor and the p-channel thin film transistor are from 10 to 45 cm2/V·s and 0.3 cm2/V·s or less, respectively.
摘要翻译： 证明了包括具有优异的电特性和高可靠性的n沟道薄膜晶体管和p沟道薄膜晶体管的显示装置，并且还提供了其制造方法。 显示装置包括反向交错的p沟道薄膜晶体管和反向交错的n沟道薄膜晶体管，其中栅极绝缘膜，微晶半导体膜和非晶半导体膜依次层叠在栅电极上。 微晶半导体膜含有浓度为1×1016原子/ cm3以下的氧。 n沟道薄膜晶体管和p沟道薄膜晶体管的迁移率分别为10〜45cm2 / V·s，0.3cm2·V·s以下。
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公开(公告)号：US20090047775A1
公开(公告)日：2009-02-19
申请号：US12222686
申请日：2008-08-14
IPC分类号： H01L21/205
CPC分类号： H01L29/78696 , H01L21/0237 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L27/124 , H01L29/04 , H01L29/41733 , H01L29/66765
摘要： The present invention relates to a method for manufacturing a display device including a p-channel thin film transistor and an n-channel thin film transistor having a microcrystalline semiconductor film each of which are an inverted-staggered type, and relates to a method for formation of an insulating film and a semiconductor film which are included in the thin film transistor. Two or more kinds of high-frequency powers having different frequencies are supplied to an electrode for generating glow discharge plasma in a reaction chamber. High-frequency powers having different frequencies are supplied to generate glow discharge plasma, so that a thin film of a semiconductor or an insulator is formed. High-frequency powers having different frequencies (different wavelength) are superimposed and applied to the electrode of a plasma CVD apparatus, so that densification and uniformity of plasma for preventing the effect of surface standing wave of plasma can be realized.
摘要翻译： 本发明涉及一种制造显示装置的方法，该显示装置包括一个p沟道薄膜晶体管和一个具有微晶半导体薄膜的n沟道薄膜晶体管，它们都是反向交错型，并且涉及一种形成方法 包括在薄膜晶体管中的绝缘膜和半导体膜。 向反应室内产生辉光放电等离子体的电极供给具有不同频率的两种以上的高频电力。 提供具有不同频率的高频功率以产生辉光放电等离子体，从而形成半导体或绝缘体的薄膜。 具有不同频率（不同波长）的高频功率被叠加并施加到等离子体CVD装置的电极，从而可以实现等离子体的致密化和均匀性，以防止等离子体的表面驻波的影响。
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