公开(公告)号：US20080245414A1

公开(公告)日：2008-10-09

申请号：US11733184

申请日：2007-04-09

申请人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

发明人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

摘要翻译： 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元 层。

公开(公告)号：US20080289686A1

公开(公告)日：2008-11-27

申请号：US11752794

申请日：2007-05-23

申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L31/04 ,  C23C16/00

CPC分类号： H01L31/1884 ,  H01L31/022466 ,  H01L31/04 ,  Y02E10/50

摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

公开(公告)号：US07964430B2

公开(公告)日：2011-06-21

申请号：US11752823

申请日：2007-05-23

申请人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L21/332 ,  H01L21/00

CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

摘要： Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

摘要翻译： 提供了减少透明导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透明导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

公开(公告)号：US08203071B2

公开(公告)日：2012-06-19

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US20080289687A1

公开(公告)日：2008-11-27

申请号：US11752823

申请日：2007-05-23

申请人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： TAE KYUNG WON ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L31/04

CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

摘要： Methods and apparatus for reducing defects on transmitting conducting oxide (TCO) layer are provided. The method includes a method of laser scribing a TCO layer for solar cell applications. In one embodiment, a method for depositing a silicon layer on a transmitting conducting oxide (TCO) layer may include laser scribing a cell-integrated region of a TCO layer disposed on a substrate for solar applications, the TCO layer having a laser scribing free periphery region outward of the cell-integrated region, the periphery region having a width between about 10 mm and about 30 mm measured from an edge of the substrate, transferring the scribed substrate into a deposition chamber, and depositing a silicon containing layer on the TCO layer in the deposition chamber.

摘要翻译： 提供了减少传导导电氧化物（TCO）层缺陷的方法和装置。 该方法包括激光划片用于太阳能电池应用的TCO层的方法。 在一个实施例中，用于在透射导电氧化物（TCO）层上沉积硅层的方法可以包括激光刻划设置在用于太阳能应用的衬底上的TCO层的电池集成区域，TCO层具有激光划线自由周边 所述外围区域具有从所述基板的边缘测量的约10mm至约30mm之间的宽度，将所述划线基板转印到沉积室中，并且在所述TCO层上沉积含硅层 在沉积室中。

公开(公告)号：US20090020154A1

公开(公告)日：2009-01-22

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US07919398B2

公开(公告)日：2011-04-05

申请号：US12493020

申请日：2009-06-26

申请人： Yong Kee Chae ,  Soo Young Choi ,  Shuran Sheng

发明人： Yong Kee Chae ,  Soo Young Choi ,  Shuran Sheng

IPC分类号： H01L21/20

CPC分类号： H01L31/075 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate.

摘要翻译： 权利要求中所述的本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 在一个实施例中，提供了一种在衬底上形成薄膜多结太阳能电池的方法。 该方法包括将基底定位在反应区中，向反应区提供气体混合物，其中气体混合物包含含硅化合物和氢气，在第一个衬底上形成本征型微晶硅层的第一区域 沉积速率，以高于第一沉积速率的第二沉积速率在衬底上形成本征型微晶硅层的第二区域，以及在第三沉积速率下在衬底上形成本征型微晶硅层的第三区域 比第二沉积速率。

公开(公告)号：US20120107996A1

公开(公告)日：2012-05-03

申请号：US12916526

申请日：2010-10-30

申请人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

发明人： Shuran Sheng ,  Lin Zhang ,  Zheng Yuan ,  Yong Kee Chae

IPC分类号： H01L31/18

CPC分类号： H01L31/076 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/1884 ,  Y02E10/548

摘要： Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer.

摘要翻译： 本发明的实施方案提供了在用于太阳能电池器件的透明导电氧化物层上进行表面处理工艺的方法。 在一个实施例中，执行表面处理工艺的方法包括提供在处理室中设置有透明导电氧化物层的衬底，将包含含氧气体的气体混合物供应到处理室中，并且使用 在透明导电氧化物层的表面上的气体混合物。

公开(公告)号：US20100258169A1

公开(公告)日：2010-10-14

申请号：US12422551

申请日：2009-04-13

申请人： Shuran Sheng ,  Yong Kee Chae

发明人： Shuran Sheng ,  Yong Kee Chae

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02595 ,  H01L21/0262 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： A method for an intrinsic type microcrystalline silicon layer is provided. In one embodiment, the microcrystalline silicon layer is fabricated by providing a substrate into a processing chamber, supplying a gas mixture into the processing chamber, applying a RF power at a first mode in the gas mixture, pulsing the gas mixture into the processing chamber, and applying the RF power at a second mode in the pulsed gas mixture.

摘要翻译： 提供本征型微晶硅层的方法。 在一个实施例中，微晶硅层通过将衬底提供到处理室中，将气体混合物供应到处理室中，在气体混合物中以第一模式施加RF功率，将气体混合物脉冲到处理室中， 以及在脉冲气体混合物中以第二模式施加RF功率。

公开(公告)号：US20110232753A1

公开(公告)日：2011-09-29

申请号：US12729777

申请日：2010-03-23

申请人： Shuran Sheng ,  Yong Kee Chae

发明人： Shuran Sheng ,  Yong Kee Chae

IPC分类号： H01L31/0368 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/03685 ,  H01L31/03687 ,  H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1812 ,  H01L31/1824 ,  H01L31/1872 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer.

摘要翻译： 提供了制造太阳能电池活性层的方法和装置。 掺杂微晶半导体层在低氢流速下由带隙增强合金材料形成。 在半导体源的低流量下建立沉积条件，并且随着沉积第一子层而倾斜到高流量。 将带隙增强合金材料加入到反应混合物中以沉积第二子层。 带隙增强合金材料可以可选地停止以沉积第三子层。