公开(公告)号：US20080245414A1

公开(公告)日：2008-10-09

申请号：US11733184

申请日：2007-04-09

申请人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

发明人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

IPC分类号： H01L31/00

CPC分类号： H01L31/022425 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

摘要翻译： 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元 层。

公开(公告)号：US07964430B2

公开(公告)日：2011-06-21

申请号：US11752823

申请日：2007-05-23

申请人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

发明人： Tae Kyung Won ,  Soo Young Choi ,  Yong Kee Chae ,  Liwei Li ,  Shuran Sheng

IPC分类号： H01L21/332 ,  H01L21/00

CPC分类号： H01L31/022466 ,  H01L31/04 ,  H01L31/1884 ,  Y02E10/50 ,  Y10S438/94

摘要： Methods and apparatus for reducing defects on transparent conducting oxide (TCO) layer are provided. In one embodiment, a method for depositing a silicon layer on a transparent conducting oxide (TCO) layer may include providing a substrate having a TCO layer disposed thereon, wherein the TCO layer has a peripheral region and a cell integrated region, the cell integrated region having laser scribing patterns disposed thereon, positioning the substrate on a substrate support assembly disposed in a processing chamber, wherein the substrate support assembly has a roughened surface in contact with the substrate, contacting a shadow frame to the peripheral region of the TCO layer and to the substrate support assembly thereby creating an electrical ground path between the TCO layer and substrate support through the shadow frame, and depositing a silicon containing layer on the TCO layer through an aperture of the shadow frame.

摘要翻译： 提供了减少透明导电氧化物（TCO）层缺陷的方法和装置。 在一个实施例中，用于在透明导电氧化物（TCO）层上沉积硅层的方法可以包括提供其上设置有TCO层的衬底，其中TCO层具有外围区域和电池集成区域，电池集成区域 其具有设置在其上的激光划线图案，将所述基板定位在设置在处理室中的基板支撑组件上，其中所述基板支撑组件具有与所述基板接触的粗糙表面，将阴影框架接触所述TCO层的周边区域， 衬底支撑组件，从而通过阴影框架在TCO层和衬底支撑件之间形成电接地路径，并且通过阴影框架的孔口在TCO层上沉积含硅层。

公开(公告)号：US08203071B2

公开(公告)日：2012-06-19

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US20090020154A1

公开(公告)日：2009-01-22

申请号：US12178289

申请日：2008-07-23

申请人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

发明人： Shuran Sheng ,  Yong Kee Chae ,  Soo Young Choi ,  Tae Kyung Won ,  Liwei Li

IPC分类号： H01L31/00 ,  H01L21/20

CPC分类号： H01L31/1824 ,  H01L31/03685 ,  H01L31/076 ,  H01L31/1804 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments of the present invention generally relate to solar cells and methods and apparatuses for forming the same. More particularly, embodiments of the present invention relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. Embodiments of the present invention also include an improved thin film silicon solar cell, and methods and apparatus for forming the same, where one or more of the layers in the solar cell comprises at least one amorphous silicon layer that has improved electrical characteristics and mechanical properties, and is capable of being deposited at rates many times faster than conventional amorphous silicon deposition processes.

摘要翻译： 本发明的实施例一般涉及太阳能电池及其形成方法和装置。 更具体地，本发明的实施例涉及薄膜多结太阳能电池及其形成方法和装置。 本发明的实施例还包括改进的薄膜硅太阳能电池及其形成方法和装置，其中太阳能电池中的一个或多个层包括至少一个具有改善的电特性和机械性能的非晶硅层 ，并且能够以比常规非晶硅沉积工艺快许多倍的速率沉积。

公开(公告)号：US20080153280A1

公开(公告)日：2008-06-26

申请号：US11614461

申请日：2006-12-21

申请人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

发明人： Yanping Li ,  Yan Ye ,  Yong-Kee Chae ,  Tae Kyung Won ,  Ankur Kadam ,  Shuran Sheng ,  Liwei Li

IPC分类号： H01L21/44

CPC分类号： C23C14/086 ,  C23C14/0073 ,  H01L31/022466 ,  H01L31/1884 ,  Y02E10/50

摘要： Methods for sputter depositing a transparent conductive oxide (TCO) layer are provided in the present invention. The transparent conductive oxide layer may be utilized as a back reflector in a photovoltaic device. In one embodiment, the method includes providing a substrate in a processing chamber, forming a first portion of a transparent conductive oxide layer on the substrate by a first sputter deposition step, and forming a second portion of the transparent conductive oxide layer by a second sputter deposition step.

摘要翻译： 在本发明中提供溅射沉积透明导电氧化物（TCO）层的方法。 透明导电氧化物层可以用作光伏器件中的后反射器。 在一个实施例中，该方法包括在处理室中提供衬底，通过第一溅射沉积步骤在衬底上形成透明导电氧化物层的第一部分，以及通过第二溅射形成透明导电氧化物层的第二部分 沉积步骤。

公开(公告)号：US08083853B2

公开(公告)日：2011-12-27

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

发明人： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20080302303A1

公开(公告)日：2008-12-11

申请号：US11759599

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： C23C16/00 ,  B05B1/14

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32449

摘要： Methods and apparatus having a flow gradient created from a gas distribution plate are provided. In one embodiment, the method and apparatus are particularly useful for, but not limited to, depositing a silicon film for solar cell applications. The apparatus for depositing a uniform film for solar cell applications includes a processing chamber, and a quadrilateral gas distribution plate disposed in the processing chamber and having at least four corners separated by four sides. The gas distribution plate further includes a first plurality of chokes formed through the gas distribution plate, the first plurality of chokes located in the corners, and a second plurality of chokes formed through the gas distribution plate, the second plurality of chokes located along the sides of the gas distribution plate between the corner regions, wherein the first plurality of chokes have a greater flow resistance than that of the second plurality of chokes.

摘要翻译： 提供了具有由气体分配板产生的流动梯度的方法和装置。 在一个实施例中，该方法和装置特别适用于但不限于沉积太阳能电池应用的硅膜。 用于沉积用于太阳能电池应用的均匀膜的设备包括处理室和设置在处理室中的四边形气体分配板，并且具有由四个侧面分开的至少四个角。 气体分配板还包括通过气体分配板形成的第一多个扼流圈，位于角部的第一多个扼流圈，以及通过气体分配板形成的第二多个扼流圈，沿着侧面设置的第二多个扼流圈 在所述角区域之间的所述气体分配板中，所述第一多个扼流器具有比所述第二多个扼流圈更大的流动阻力。

公开(公告)号：US08906813B2

公开(公告)日：2014-12-09

申请号：US13886175

申请日：2013-05-02

申请人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

发明人： Tae Kyung Won ,  Seon-Mee Cho ,  Soo Young Choi ,  Beom Soo Park ,  Dong-Kil Yim ,  John M. White ,  Jozef Kudela

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C23C16/511 ,  C23C16/54

CPC分类号： H01L21/0262 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率 以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

公开(公告)号：US08142606B2

公开(公告)日：2012-03-27

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US08114484B2

公开(公告)日：2012-02-14

申请号：US11833983

申请日：2007-08-04

申请人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

发明人： Ya-Tang Yang ,  Tae Kyung Won ,  Soo Young Choi ,  Takako Takehara ,  John M. White

IPC分类号： H01H1/24 ,  C23C16/00

CPC分类号： H01J37/32357 ,  C23C16/24 ,  C23C16/345 ,  C23C16/5096 ,  H01J37/32091

摘要： Methods for forming a film stack suitable for transistor fabrication using a low temperature plasma enhanced chemical vapor deposition (PECVD) process are provided. In one embodiment, the method includes providing a substrate in a PECVD chamber, depositing a dual layer SiNx film on the substrate, depositing a dual layer amorphous silicon film on the SiNx film, and depositing a n-doped silicon film on the dual layer amorphous silicon film. The aforementioned films are deposited at a temperature less than about 300 degrees Celsius in the same PECVD chamber.

摘要翻译： 提供了使用低温等离子体增强化学气相沉积（PECVD）工艺形成适用于晶体管制造的膜堆叠的方法。 在一个实施例中，该方法包括在PECVD室中提供衬底，在衬底上沉积双层SiNx膜，在SiNx膜上沉积双层非晶硅膜，以及在双层非晶体上沉积n掺杂硅膜 硅膜。 上述膜在相同的PECVD室中以低于约300摄氏度的温度沉积。