公开(公告)号：US20050145873A1

公开(公告)日：2005-07-07

申请号：US10750784

申请日：2004-01-03

申请人： Shyi-Ming Pan ,  Fen-Ren Chien ,  Lung-Chien Chen

发明人： Shyi-Ming Pan ,  Fen-Ren Chien ,  Lung-Chien Chen

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/32 ,  H01L33/007

摘要： A light-emitting diode device is provided with the following manufacturing method: forming an n-GaN layer on a substrate; growing an SiO2 layer on the n-GaN surface, and using the photo-lithography process to expose the n-GaN within the mesa area; using MOCVD to grow an LED structure in the epitaxy within the mesa area, the formed structure being a p-n coplanar structure due to the selective area characteristic; and finally, forming the electrodes on the structure to complete an LED device. The device can be manufactured without the etching process to form the p-n coplanar structure. In comparison to other conventional manufacturing methods, the method simplifies the manufacturing process, and avoids many problems associated with etching, including non-uniform etching, overly rough surface, etching damages, and current leakage. Furthermore, SiO2 is used as a scattering layer to prevent emitted light from internally reflected, and therefore, improves the external quantum efficiency.

摘要翻译： 一种发光二极管器件具有以下制造方法：在衬底上形成n-GaN层; 在n-GaN表面上生长SiO 2层，并使用光刻工艺在台面区域内露出n-GaN; 使用MOCVD在台面区域内的外延生长LED结构，由于选择区域特性，形成的结构是p-n共面结构; 最后，在结构上形成电极以完成LED器件。 可以在没有蚀刻工艺的情况下制造器件以形成p-n共面结构。 与其他常规制造方法相比，该方法简化了制造工艺，并且避免了与蚀刻相关的许多问题，包括不均匀蚀刻，过度粗糙的表面，蚀刻损伤和电流泄漏。 此外，使用SiO 2作为散射层以防止发射的光从内部反射，因此提高了外部量子效率。

公开(公告)号：US07374958B2

公开(公告)日：2008-05-20

申请号：US11380209

申请日：2006-04-26

申请人： Shyi-Ming Pan ,  Fen-Ren Chien

发明人： Shyi-Ming Pan ,  Fen-Ren Chien

IPC分类号： H01L21/00 ,  H01L21/44 ,  H01L33/00 ,  H01L20/22 ,  H01L27/15 ,  H01L29/267

CPC分类号： H01L25/167 ,  H01L33/62 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/16

摘要： A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.

摘要翻译： 发光半导体接合结构包括通过将衬底接合到发光半导体上而形成的结构。 基板是包含电路的结构。 欧姆接触N电极层和P电极层分别形成在发光半导体的N型接触层和P型接触层上。 通过浸镀或沉积在基板的表面上形成第一金属层和第二金属层。 金属层电连接到基板的电路的相应的电信号输入/输出节点。 第一金属层和第二金属层通过超声波焊接分别接合在N电极层和P电极层上，并且因此将发光半导体结合到基板上，从而实现电连接。

公开(公告)号：US20070246711A1

公开(公告)日：2007-10-25

申请号：US11409003

申请日：2006-04-24

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US20070176182A1

公开(公告)日：2007-08-02

申请号：US11340660

申请日：2006-01-27

申请人： Way-Jze Wen ,  Yi-Fong Lin ,  Shyi-Ming Pan ,  Chih-Wei Chiang ,  Yin-Cheng Chu ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Way-Jze Wen ,  Yi-Fong Lin ,  Shyi-Ming Pan ,  Chih-Wei Chiang ,  Yin-Cheng Chu ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L25/167 ,  H01L33/64 ,  H01L2224/73265 ,  H05K1/0203 ,  H05K1/182 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A structure for integrating LED circuit onto a heat-dissipation substrate is disclosed. At least an electronic component and a LED chip are integrated on a heat-dissipation substrate. The electronic component can be a passive component, a drive chip, an electrostatic discharge protection device, or a sensing component. Therefore, both wire-bonding area of the LED chip and the series resistance of wires are reduced while the heat dissipation efficiency is enhanced.

摘要翻译： 公开了一种将LED电路集成到散热基板上的结构。 至少电子部件和LED芯片集成在散热基板上。 电子部件可以是无源部件，驱动芯片，静电放电保护装置或感测部件。 因此，LED芯片的引线接合面积和电线的串联电阻降低，同时散热效率提高。

公开(公告)号：US20060163682A1

公开(公告)日：2006-07-27

申请号：US11041492

申请日：2005-01-22

申请人： Shyi-Ming Pan ,  Fen-Ren Chien

发明人： Shyi-Ming Pan ,  Fen-Ren Chien

IPC分类号： H01L27/14

CPC分类号： H01L31/1035 ,  H01L31/022408 ,  H01L31/105

摘要： An epitaxial structure for semiconducting photo detectors is provided. The epitaxial structure contains a substrate having a built-in electric circuit, a first and second metallic layers on top of said substrate electrically connected to the corresponding electrical input and output points of the substrate's electric circuit, and a semiconducting photo detecting element as the topmost part for receiving incident lights.

摘要翻译： 提供了一种用于半导体光电探测器的外延结构。 外延结构包含具有内置电路的基板，在所述基板的顶部上电连接到基板的电路的对应电输入和输出点的第一和第二金属层，以及作为最上层的半导体光检测元件 部分接收入射灯。

公开(公告)号：US07632693B2

公开(公告)日：2009-12-15

申请号：US12149288

申请日：2008-04-30

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L29/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。

公开(公告)号：US20080121907A1

公开(公告)日：2008-05-29

申请号：US11309445

申请日：2006-08-08

申请人： Way-Jze Wen ,  Yi-Fong Lin ,  Huan-Che Tseng ,  Shyi-Ming Pan ,  Fen-Ren Chien ,  Kuo-Ruei Huang ,  Wen-Joe Song

发明人： Way-Jze Wen ,  Yi-Fong Lin ,  Huan-Che Tseng ,  Shyi-Ming Pan ,  Fen-Ren Chien ,  Kuo-Ruei Huang ,  Wen-Joe Song

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： An LED includes a substrate, a first type doping semiconductor layer, a first electrode, a light emitting layer, a second type doping semiconductor layer, a second electrode, a first dielectric layer and a first conductive plug. The first type doping semiconductor layer is formed on the substrate, and the light emitting layer, the second type doping semiconductor layer and the second electrode are formed on a portion of the first type doping semiconductor layer in sequence. The first dielectric layer is formed on another portion of the first type doping semiconductor layer where is not covered by the light emitting layer. The first electrode formed on the first dielectric layer is electrically connected with the first type doping semiconductor layer through the first conductive plug formed in the first dielectric layer. Furthermore, the second electrode is electrically connected with the second type doping semiconductor layer.

摘要翻译： LED包括基板，第一类型掺杂半导体层，第一电极，发光层，第二类型掺杂半导体层，第二电极，第一介电层和第一导电插塞。 在基板上形成第一型掺杂半导体层，依次在第一型掺杂半导体层的一部分上形成发光层，第二型掺杂半导体层和第二电极。 第一介电层形成在第一型掺杂半导体层的未被发光层覆盖的另一部分上。 形成在第一电介质层上的第一电极通过形成在第一介电层中的第一导电插塞与第一型掺杂半导体层电连接。 此外，第二电极与第二类型掺杂半导体层电连接。

公开(公告)号：US08263991B2

公开(公告)日：2012-09-11

申请号：US11979963

申请日：2007-11-13

申请人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

发明人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：US20090275156A1

公开(公告)日：2009-11-05

申请号：US12458482

申请日：2009-07-14

申请人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

发明人： Kuo-Chin Huang ,  Shyi-Ming Pan ,  Cheng-Kuo Huang ,  Chi-Yang Chuang ,  Fen-Ren Chien

IPC分类号： H01L21/20

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46

摘要： A light-emitting gallium nitride-based III-V group compound semiconductor device and a manufacturing method thereof are disclosed. The light emitting device includes a substrate, a n-type semiconductor layer over the substrate, an active layer over the n-type semiconductor layer, a p-type semiconductor layer over the active layer, a conductive layer over the p-type semiconductor layer, a first electrode disposed on the conductive layer and a second electrode arranged on exposed part of the n-type semiconductor layer. A resistant reflective layer or a contact window is disposed on the p-type semiconductor layer, corresponding to the first electrode so that current passes beside the resistant reflective layer or by the contact window to the active layer for generating light. When the light is transmitted to the conductive layer for being emitted, it is not absorbed or shielded by the first electrode. Thus the current is distributed efficiently over the conductive layer. Therefore, both LED brightness and efficiency are improved. Moreover, adhesion between the conductive layer and the p-type semiconductor layer is improved so that metal peel-off problem during manufacturing processes can be improved.

摘要翻译： 公开了一种发光氮化镓III-V族化合物半导体器件及其制造方法。 发光器件包括衬底，衬底上的n型半导体层，n型半导体层上的有源层，有源层上的p型半导体层，p型半导体层上的导电层 设置在导电层上的第一电极和布置在n型半导体层的暴露部分上的第二电极。 对应于第一电极，在p型半导体层上设置电阻反射层或接触窗，使得电流通过电阻反射层旁边或通过接触窗到有源层产生光。 当光传输到导电层以发射时，其不被第一电极吸收或屏蔽。 因此，电流在导电层上有效地分布。 因此，提高了LED的亮度和效率。 此外，改善了导电层和p型半导体层之间的粘附性，从而可以提高制造工艺期间的金属剥离问题。

公开(公告)号：US07476912B2

公开(公告)日：2009-01-13

申请号：US11409003

申请日：2006-04-24

申请人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

发明人： Cheng-Kuo Huang ,  Shyi-Ming Pan ,  Yun-Li Li ,  Huan-Che Tseng ,  Fen-Ren Chien

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

摘要翻译： 公开了一种多向光散射LED及其制造方法。 金属氧化物不规则地设置在第二半导体层上，然后通过蚀刻去除。 第二半导体层的一部分，发光层的一部分或第一半导体层的一部分也被去除以形成散射层。 透明导电层设置在第二半导体层的上方，而第二电极设置在透明导电层的上方。 第一电极安装在散射层上。 因此，来自LED的光输出在多方向上散射。