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    Thermal management of inductively coupled plasma reactors
    1.
    发明申请
    Thermal management of inductively coupled plasma reactors 有权
    电感耦合等离子体反应器的热管理

    公开(公告)号：US20070034153A1

    公开(公告)日：2007-02-15

    申请号：US11200431

    申请日：2005-08-09

    申请人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh ,  Muhammad Rasheed

    发明人： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh ,  Muhammad Rasheed

    IPC分类号： H01L21/306 ,  C23C16/00

    CPC分类号： H01J37/32522 ,  H01J37/321

    摘要： An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.

    摘要翻译： RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。 框架适于将RF线圈支撑在适当位置。 界面材料设置在框架和处理室的侧壁之间并与之热接触。 界面材料的导热率为4.0W / mK以上。

    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER
    4.
    发明申请
    INTERNAL BALANCED COIL FOR INDUCTIVELY COUPLED HIGH DENSITY PLASMA PROCESSING CHAMBER 有权
    用于感应耦合高密度等离子体加工室的内部平衡线圈

    公开(公告)号：US20080185284A1

    公开(公告)日：2008-08-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： H01L21/3065 ,  C23C16/00 ,  H05F3/00

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

    Internal balanced coil for inductively coupled high density plasma processing chamber
    5.
    发明授权
    Internal balanced coil for inductively coupled high density plasma processing chamber 有权
    用于电感耦合高密度等离子体处理室的内部平衡线圈

    公开(公告)号：US07789993B2

    公开(公告)日：2010-09-07

    申请号：US11670662

    申请日：2007-02-02

    申请人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    发明人： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

    IPC分类号： C23C16/00 ,  H01L21/306

    CPC分类号： H01J37/321

    摘要： A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

    摘要翻译： 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

    USE OF ENHANCED TURBOMOLECULAR PUMP FOR GAPFILL DEPOSITION USING HIGH FLOWS OF LOW-MASS FLUENT GAS
    7.
    发明申请
    USE OF ENHANCED TURBOMOLECULAR PUMP FOR GAPFILL DEPOSITION USING HIGH FLOWS OF LOW-MASS FLUENT GAS 审中-公开
    使用低流量气体高流量的增强型涡轮分子泵进行气泡沉积

    公开(公告)号：US20060225648A1

    公开(公告)日：2006-10-12

    申请号：US11422212

    申请日：2006-06-05

    申请人： Muhammad Rasheed ,  Steven Kim

    发明人： Muhammad Rasheed ,  Steven Kim

    IPC分类号： B05C11/00

    CPC分类号： C23C16/4412 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

    摘要： High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

    摘要翻译： 在HDP-CVD工艺中使用高流量的低质量流动气体用于氧化硅膜的间隙填充。 为这种低质量流动气体提供大的压缩比的增强的涡轮分子泵允许在衬底处理室中保持相对较低水平的压力，从而提高间隙填充特性。

    DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER
    9.
    发明申请
    DEPOSITION RING AND ELECTROSTATIC CHUCK FOR PHYSICAL VAPOR DEPOSITION CHAMBER 有权
    用于物理蒸气沉积室的沉积环和静电吸盘

    公开(公告)号：US20120103257A1

    公开(公告)日：2012-05-03

    申请号：US13280771

    申请日：2011-10-25

    申请人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

    发明人： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

    IPC分类号： C23C16/458 ,  C23C16/04 ,  C23C16/44

    CPC分类号： C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

    摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

    摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

    Method of making an electrostatic chuck with reduced plasma penetration and arcing
    10.
    发明授权
    Method of making an electrostatic chuck with reduced plasma penetration and arcing 有权
    制造具有降低的等离子体穿透和电弧放电的静电卡盘的方法

    公开(公告)号：US08108981B2

    公开(公告)日：2012-02-07

    申请号：US11888327

    申请日：2007-07-31

    申请人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    发明人： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

    IPC分类号： B23P17/00

    CPC分类号： H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

    摘要： A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

    摘要翻译： 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。