公开(公告)号：US20060225648A1

公开(公告)日：2006-10-12

申请号：US11422212

申请日：2006-06-05

Applicant: Muhammad Rasheed ,  Steven Kim

Inventor： Muhammad Rasheed ,  Steven Kim

IPC: B05C11/00

CPC classification number: C23C16/4412 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

Abstract: High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

Abstract translation: 在HDP-CVD工艺中使用高流量的低质量流动气体用于氧化硅膜的间隙填充。 为这种低质量流动气体提供大的压缩比的增强的涡轮分子泵允许在衬底处理室中保持相对较低水平的压力，从而提高间隙填充特性。

公开(公告)号：US20070034153A1

公开(公告)日：2007-02-15

申请号：US11200431

申请日：2005-08-09

Applicant: Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh ,  Muhammad Rasheed

Inventor： Siqing Lu ,  Qiwei Liang ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh ,  Muhammad Rasheed

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/32522 ,  H01J37/321

Abstract: An RF coil assembly provides a source to generate a plasma inductively in a process chamber. The RF coil assembly includes an RF coil disposed about a perimeter of the processing chamber and a frame disposed about a perimeter of the processing chamber. The frame is adapted to support the RF coil in position. An interface material is disposed between and in thermal contact with the frame and a sidewall of the processing chamber. The interface material has a thermal conductivity of 4.0 W/mK or greater.

Abstract translation: RF线圈组件提供源以在处理室中感应地产生等离子体。 RF线圈组件包括围绕处理室的周边布置的RF线圈和围绕处理室的周边设置的框架。 框架适于将RF线圈支撑在适当位置。 界面材料设置在框架和处理室的侧壁之间并与之热接触。 界面材料的导热率为4.0W / mK以上。

公开(公告)号：US09834840B2

公开(公告)日：2017-12-05

申请号：US13106392

申请日：2011-05-12

Applicant: Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

Inventor： Muhammad Rasheed ,  Rongjun Wang ,  Zhendong Liu ,  Xinyu Fu ,  Xianmin Tang

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/35 ,  C23C14/564 ,  H01J37/32853 ,  H01J37/32871 ,  H01J37/34 ,  H01J37/3411

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.

公开(公告)号：US20120103257A1

公开(公告)日：2012-05-03

申请号：US13280771

申请日：2011-10-25

Applicant: Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

Inventor： Muhammad Rasheed ,  Keith A. Miller ,  Rongjun Wang

IPC: C23C16/458 ,  C23C16/04 ,  C23C16/44

CPC classification number: C23C14/50 ,  C23C14/3407 ,  C23C14/564 ,  C23C16/4585 ,  H01L21/68735

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract translation: 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括沉积环和基座组件的处理套件。 处理套件的组件单独工作，并且组合工作，以显着降低其在处理期间对基板周围的电场的影响。

公开(公告)号：US08108981B2

公开(公告)日：2012-02-07

申请号：US11888327

申请日：2007-07-31

Applicant: Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

Inventor： Dmitry Lubomirsky ,  Kadthala Ramaya Narendranath ,  Xinglong Chen ,  Sudhir Gondhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC: B23P17/00

CPC classification number: H02N13/00 ,  H01L21/6833 ,  Y10T29/49117 ,  Y10T29/49885

Abstract: A method of making an electrostatic chuck comprising positioning a plate into a channel in a body to form a plenum and inserting a dielectric component into an opening in the plate, where the dielectric component defines a portion of a passage from the plenum. Thereafter, depositing a dielectric layer covering at least a portion of the body and at least a portion of the plate to form a support surface. The dielectric layer is polished to a specified thickness. In one embodiment, the polishing process forms an opening through the dielectric layer to enable the dielectric component to define a passage between the support surface and the plenum. In another embodiment, at least a portion of the dielectric layer is porous proximate the dielectric component such that the porous dielectric layer and the dielectric component form a passage between the support surface and the plenum. In a further embodiment, a hole is formed through the dielectric layer and the hole in the dielectric layer and the dielectric component form a passage between the support surface and the plenum.

Abstract translation: 一种制造静电卡盘的方法，包括将板定位在主体中的通道中以形成气室，并将电介质部件插入板中的开口中，其中介电部件限定了来自气室的通道的一部分。 此后，沉积覆盖主体的至少一部分和板的至少一部分以形成支撑表面的电介质层。 将电介质层抛光至规定的厚度。 在一个实施例中，抛光工艺形成通过介电层的开口，以使得介质部件能够在支撑表面和集气室之间限定通道。 在另一个实施例中，电介质层的至少一部分在绝缘元件附近是多孔的，使得多孔介电层和电介质元件在支撑表面和增压室之间形成通道。 在另一实施例中，穿过电介质层形成孔，并且电介质层中的孔和电介质元件在支撑表面和气室之间形成通道。

公开(公告)号：US20060113038A1

公开(公告)日：2006-06-01

申请号：US11123453

申请日：2005-05-04

Applicant: Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

Inventor： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

IPC: H01L21/306 ,  C23F1/00

CPC classification number: C23C16/4558

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

公开(公告)号：US08795488B2

公开(公告)日：2014-08-05

申请号：US13048440

申请日：2011-03-15

Applicant: Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

Inventor： Muhammad Rasheed ,  Lara Hawrylchak ,  Michael S. Cox ,  Donny Young ,  Kirankumar Savandaiah ,  Alan Ritchie

IPC: C23C14/40

CPC classification number: H01J37/3405 ,  H01J37/3411

Abstract: In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

Abstract translation: 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

公开(公告)号：US07848076B2

公开(公告)日：2010-12-07

申请号：US11888311

申请日：2007-07-31

Applicant: Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

Inventor： Kadthala Ramaya Narendranath ,  Dmitry Lubomirsky ,  Xinglong Chen ,  Sudhir Goodhalekar ,  Muhammad Rasheed ,  Tony Kaushal

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

Abstract: A method and apparatus for providing a fluid distribution element for an electrostatic chuck that reduces plasma formation and arcing within heat transfer fluid passages. One embodiment comprises a plate and a dielectric component, where the dielectric component is inserted into the plate. The plate is adapted to be positioned within a channel to define a plenum, wherein the dielectric component provides at least a portion of a fluid passage coupled to the plenum. A porous dielectric layer, formed upon the dielectric component, provides at least another portion of a fluid passage coupled to the plenum. In other embodiments, the fluid distribution element comprises various arrangements of components to define a fluid passage that does not provide a line-of-sight path from the support surface for a substrate to a plenum.

Abstract translation: 一种用于提供用于静电卡盘的流体分配元件的方法和装置，其减少了传热流体通道内的等离子体形成和电弧。 一个实施例包括板和电介质部件，其中介电部件插入板中。 板适于被定位在通道内以限定通风室，其中介电部件提供耦合到集气室的流体通道的至少一部分。 形成在电介质部件上的多孔介电层提供至少另一部分与气室相连的流体通道。 在其他实施例中，流体分配元件包括各种组件的布置，以限定流体通道，该流体通道不提供从用于基底的支撑表面到气室的视线路径。

公开(公告)号：US07572647B2

公开(公告)日：2009-08-11

申请号：US11670728

申请日：2007-02-02

Applicant: Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

Inventor： Robert Chen ,  Canfeng Lai ,  Xinglong Chen ,  Weiyi Luo ,  Zhong Qiang Hua ,  Siqing Lu ,  Muhammad Rasheed ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Ellie Y. Yieh

IPC: H01L21/00

CPC classification number: C23C16/507 ,  H01J37/321 ,  H01J37/32174 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31604 ,  H01L21/31608

Abstract: A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Abstract translation: 提供一种用于半导体处理系统中的线圈以在腔室中产生具有磁场的等离子体。 线圈包括第一线圈段，第二线圈段和内部平衡电容器。 第一线圈段具有第一端和第二端。 线圈段的第一端适于连接到电源。 第二线圈段具有第一和第二端。 第一线圈段的第二端适于连接到外部平衡电容器。 内部平衡电容器串联连接在第一线圈段的第二端和第二线圈段的第一端之间。 内部平衡电容器和线圈段适于沿着第一线圈段提供基本上与第二线圈段的虚拟接地对准的电压峰值。

公开(公告)号：US20080041821A1

公开(公告)日：2008-02-21

申请号：US11877502

申请日：2007-10-23

Applicant: Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

Inventor： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana Gujer

IPC: C23F1/00

CPC classification number: C23C16/4558

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。