公开(公告)号：US20190341416A1

公开(公告)日：2019-11-07

申请号：US16514393

申请日：2019-07-17

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Noriyuki Fukushima

IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N5/3745 ,  H01L25/16 ,  H04N5/232

摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

公开(公告)号：US20190137331A1

公开(公告)日：2019-05-09

申请号：US15770636

申请日：2017-06-28

申请人： Sony Corporation

发明人： Hajime Hosaka ,  Yoshikazu Nitta ,  Kenichi Okumura ,  Shunichi Sukegawa

IPC分类号： G01J1/02 ,  G01J1/44 ,  G01J5/48 ,  H04N5/225 ,  H04N5/33 ,  H04N5/369

摘要： An imaging apparatus is configured of a first structure 20 and a second structure 40, in which the first structure 20 includes a first substrate 21, a plurality of temperature detection devices 15 formed on the first substrate 21 and configured to detect a temperature on the basis of an infrared ray, drive lines 72, and signal lines 71, the second structure 40 includes a second substrate 41, and a drive circuit provided on the second substrate 41 and covered with a covering layer 43, the first substrate 21 is bonded to the covering layer 43, a cavity 50 is provided between each temperature detection device 15 and the covering layer 43, and the drive lines 72 and the signal lines 71 are electrically connected to the drive circuit.

公开(公告)号：US20180109750A1

公开(公告)日：2018-04-19

申请号：US15831559

申请日：2017-12-05

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Shunji Maeda ,  Junichi Ishibashi ,  Motoshige Okada

IPC分类号： H04N5/376 ,  H04N5/374

摘要： A solid state image sensor of the present disclosure includes: a first semiconductor substrate provided with at least a pixel array unit in which pixels that perform photoelectric conversion are arranged in a matrix form; and a second semiconductor substrate provided with at least a control circuit unit that drives the pixels. The first semiconductor substrate and the second semiconductor substrate are stacked, with first surfaces on which wiring layers are formed facing each other, the pixel array unit is composed of a plurality of divided array units, the control circuit unit is provided corresponding to each of the plurality of divided array units, and electrical connection is established in each of the divided array units, through an electrode located on each of the first surfaces of the first semiconductor substrate and the second semiconductor substrate, between the pixel array unit and the control circuit unit.

公开(公告)号：US09276033B2

公开(公告)日：2016-03-01

申请号：US14587800

申请日：2014-12-31

申请人： Sony Corporation

发明人： Hiroshi Takahashi ,  Shunichi Sukegawa ,  Keishi Inoue

IPC分类号： H01L23/528 ,  H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L31/02 ,  H01L23/00 ,  H01L23/535

CPC分类号： H01L27/14634 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/535 ,  H01L24/05 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L31/02002 ,  H01L31/02008 ,  H01L31/02013 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/08145 ,  H01L2224/24147 ,  H01L2224/48463 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/12043 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

公开(公告)号：US20180158859A1

公开(公告)日：2018-06-07

申请号：US15875259

申请日：2018-01-19

申请人： Sony Corporation

发明人： Hiroshi Takahashi ,  Shunichi Sukegawa ,  Keishi Inoue

IPC分类号： H01L27/146 ,  H01L31/02 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L23/535 ,  H01L23/528

CPC分类号： H01L27/14634 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/535 ,  H01L24/05 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L31/02002 ,  H01L31/02008 ,  H01L31/02013 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/08145 ,  H01L2224/24147 ,  H01L2224/48463 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/12043 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H04N5/379 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

公开(公告)号：US09954024B2

公开(公告)日：2018-04-24

申请号：US15668265

申请日：2017-08-03

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Noriyuki Fukushima

IPC分类号： H01L27/146 ,  H01L25/16 ,  H04N5/232 ,  H04N5/369

CPC分类号： H01L27/14634 ,  H01L25/167 ,  H01L25/18 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469 ,  H01L27/14698 ,  H01L2924/0002 ,  H04N5/23241 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/37455 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

公开(公告)号：US20180097031A1

公开(公告)日：2018-04-05

申请号：US15832951

申请日：2017-12-06

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Noriyuki Fukushima

IPC分类号： H01L27/146 ,  H04N5/369 ,  H04N5/232 ,  H01L25/16

CPC分类号： H01L27/14634 ,  H01L25/167 ,  H01L25/18 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469 ,  H01L27/14698 ,  H01L2924/0002 ,  H04N5/23241 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/37455 ,  H04N5/379 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

公开(公告)号：US20170330912A1

公开(公告)日：2017-11-16

申请号：US15668265

申请日：2017-08-03

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Noriyuki Fukushima

IPC分类号： H01L27/146 ,  H01L25/16 ,  H04N5/369 ,  H04N5/232

CPC分类号： H01L27/14634 ,  H01L25/167 ,  H01L25/18 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469 ,  H01L27/14698 ,  H01L2924/0002 ,  H04N5/23241 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/37455 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

公开(公告)号：US09762835B2

公开(公告)日：2017-09-12

申请号：US15448869

申请日：2017-03-03

申请人： Sony Corporation

发明人： Shunichi Sukegawa ,  Noriyuki Fukushima

IPC分类号： H04N5/3745 ,  H01L27/146

CPC分类号： H01L27/14634 ,  H01L25/167 ,  H01L25/18 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/1469 ,  H01L27/14698 ,  H01L2924/0002 ,  H04N5/23241 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/37455 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a connection between chips without a special circuit for communication and reducing the cost as a result. The semiconductor device includes: a first chip; and a second chip, wherein the first chip and the second chip are bonded to have a stacked structure, the first chip has a high-voltage transistor circuit mounted thereon, the second chip has mounted thereon a low-voltage transistor circuit having lower breakdown voltage than the high-voltage transistor circuit, and wiring between the first chip and the second chip is connected through a via formed in the first chip.

公开(公告)号：US20170047369A1

公开(公告)日：2017-02-16

申请号：US15335320

申请日：2016-10-26

申请人： Sony Corporation

发明人： Hiroshi Takahashi ,  Shunichi Sukegawa ,  Keishi Inoue

IPC分类号： H01L27/146

CPC分类号： H01L27/14634 ,  H01L21/76802 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5283 ,  H01L23/535 ,  H01L24/05 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L31/02002 ,  H01L31/02008 ,  H01L31/02013 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/08145 ,  H01L2224/24147 ,  H01L2224/48463 ,  H01L2224/80896 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/12043 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2224/8203 ,  H01L2224/821 ,  H01L2224/80001 ,  H01L2224/82

摘要： A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.

摘要翻译： 一种半导体器件，包括与第二材料层相邻的第一材料层，穿过第一材料层并延伸到第二材料层中的第一通孔，以及延伸到第一材料层中的第二通孔，沿着共同的截面平行 到两个材料层之间的界面，第一通孔具有大于第二通孔的横截面。