公开(公告)号：US20200168584A1

公开(公告)日：2020-05-28

申请号：US16780571

申请日：2020-02-03

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Mariam Sadaka

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/48 ,  H01L23/367 ,  H01L23/00 ,  H01L21/768

Abstract: Methods of forming bonded semiconductor structures include providing a first semiconductor structure including a device structure, bonding a second semiconductor structure to the first semiconductor structure below about 400° C., forming a through wafer interconnect through the second semiconductor structure and into the first semiconductor structure, and bonding a third semiconductor structure to the second semiconductor structure on a side thereof opposite the first semiconductor structure. In additional embodiments, a first semiconductor structure is provided. Ions are implanted into a second semiconductor structure. The second semiconductor structure is bonded to the first semiconductor structure. The second semiconductor structure is fractured along an ion implant plane, a through wafer interconnect is formed at least partially through the first and second semiconductor structures, and a third semiconductor structure is bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are formed using such methods.

公开(公告)号：US10553562B2

公开(公告)日：2020-02-04

申请号：US15695291

申请日：2017-09-05

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Mariam Sadaka

IPC: H01L25/065 ,  H01L21/768 ,  H01L23/00 ,  H01L23/367 ,  H01L23/48 ,  H01L25/00

Abstract: Methods of forming bonded semiconductor structures include providing a first semiconductor structure including a device structure, bonding a second semiconductor structure to the first semiconductor structure below about 400° C., forming a through wafer interconnect through the second semiconductor structure and into the first semiconductor structure, and bonding a third semiconductor structure to the second semiconductor structure on a side thereof opposite the first semiconductor structure. In additional embodiments, a first semiconductor structure is provided. Ions are implanted into a second semiconductor structure. The second semiconductor structure is bonded to the first semiconductor structure. The second semiconductor structure is fractured along an ion implant plane, a through wafer interconnect is formed at least partially through the first and second semiconductor structures, and a third semiconductor structure is bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are formed using such methods.

公开(公告)号：US20180012869A1

公开(公告)日：2018-01-11

申请号：US15695291

申请日：2017-09-05

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Mariam Sadaka

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L21/768 ,  H01L23/367 ,  H01L23/48

CPC classification number: H01L25/0657 ,  H01L21/76898 ,  H01L23/3677 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/80 ,  H01L24/92 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2224/03002 ,  H01L2224/033 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/09051 ,  H01L2224/09519 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/80203 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80986 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06589 ,  H01L2924/00012 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2224/03 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/014

Abstract: Methods of forming bonded semiconductor structures include providing a first semiconductor structure including a device structure, bonding a second semiconductor structure to the first semiconductor structure below about 400° C., forming a through wafer interconnect through the second semiconductor structure and into the first semiconductor structure, and bonding a third semiconductor structure to the second semiconductor structure on a side thereof opposite the first semiconductor structure. In additional embodiments, a first semiconductor structure is provided. Ions are implanted into a second semiconductor structure. The second semiconductor structure is bonded to the first semiconductor structure. The second semiconductor structure is fractured along an ion implant plane, a through wafer interconnect is formed at least partially through the first and second semiconductor structures, and a third semiconductor structure is bonded to the second semiconductor structure on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are formed using such methods.