公开(公告)号：US20160027751A1

公开(公告)日：2016-01-28

申请号：US14686775

申请日：2015-04-14

申请人： Soon-Bum KIM ,  Tae-Eun KIM ,  Eun-Hye PARK

发明人： Soon-Bum KIM ,  Tae-Eun KIM ,  Eun-Hye PARK

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05609 ,  H01L2224/05613 ,  H01L2224/05618 ,  H01L2224/0562 ,  H01L2224/05623 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05649 ,  H01L2224/05655 ,  H01L2224/05657 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05681 ,  H01L2224/11003 ,  H01L2224/1111 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13007 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13076 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13149 ,  H01L2224/13157 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13172 ,  H01L2224/13181 ,  H01L2224/13565 ,  H01L2224/13686 ,  H01L2224/16058 ,  H01L2224/16503 ,  H01L2224/81193 ,  H01L2224/8181 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/053

摘要： Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.

摘要翻译： 提供具有高可靠性焊点的半导体器件。 半导体器件包括形成在导电焊盘上的高温焊料。 在高温焊料上形成熔点低于高温焊料的低温焊料。 在高温焊料和低温焊料之间形成阻挡层。 高温焊料的Sn含量高于低温焊料。

公开(公告)号：US20130171779A1

公开(公告)日：2013-07-04

申请号：US13670120

申请日：2012-11-06

申请人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

发明人： Yeon-Taek JEONG ,  Bo-Sung KIM ,  Doo-Hyoung LEE ,  Doo-Na KIM ,  Eun-Hye PARK ,  Dong-Lim KIM ,  Hyun-Jae KIM ,  You-Seung RIM ,  Hyun-Soo LIM

IPC分类号： C09D5/00 ,  H01L29/66

CPC分类号： C09D5/00 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B35/62222 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/443 ,  C04B2235/444 ,  C04B2235/449 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

摘要翻译： 根据制造薄膜晶体管基板的方法，涂覆包含草酸金属盐和用于制造氧化物半导体的溶剂的组合物以形成薄膜，对薄膜进行退火，并将薄膜图案化以形成半导体 模式。