公开(公告)号：US20140225137A1

公开(公告)日：2014-08-14

申请号：US14256670

申请日：2014-04-18

Applicant: Soraa, Inc.

Inventor： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

IPC: H01L33/50 ,  H01L27/15

CPC classification number: F21V9/08 ,  F21K9/00 ,  F21K9/232 ,  F21K9/233 ,  F21K9/235 ,  F21K9/60 ,  F21V3/00 ,  F21V7/00 ,  F21V19/006 ,  F21V23/06 ,  F21V29/70 ,  F21V29/74 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/0002 ,  H05B33/0845 ,  H01L2924/00

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

Abstract translation: 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

公开(公告)号：US09589792B2

公开(公告)日：2017-03-07

申请号：US14089281

申请日：2013-11-25

Applicant: SORAA, INC.

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Michael Krames

IPC: H01L29/20 ,  H01L21/02 ,  H01L33/00 ,  C30B7/10 ,  C30B29/40

CPC classification number: H01L21/0254 ,  C30B7/105 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02642 ,  H01L21/02647 ,  H01L33/0075

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.

Abstract translation: 公开了具有局部近似线性的穿透位错阵列的高品质氨热III族金属氮化物晶体，制造高品质氨热III族金属氮化物晶体的方法，以及使用这种晶体的方法。 该晶体可用于种子块状晶体生长，并且用作发光二极管，激光二极管，晶体管，光电探测器，太阳能电池和用于氢发生器件的光电化学水分解的衬底。

公开(公告)号：US08905588B2

公开(公告)日：2014-12-09

申请号：US14256670

申请日：2014-04-18

Applicant: Soraa, Inc.

Inventor： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

IPC: F21V9/00 ,  F21V9/16 ,  F21S4/00 ,  F21V21/00 ,  H01J1/62 ,  H01J63/04 ,  H01L33/00 ,  H01L27/15 ,  H01L33/50

CPC classification number: F21V9/08 ,  F21K9/00 ,  F21K9/232 ,  F21K9/233 ,  F21K9/235 ,  F21K9/60 ,  F21V3/00 ,  F21V7/00 ,  F21V19/006 ,  F21V23/06 ,  F21V29/70 ,  F21V29/74 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L33/60 ,  H01L2924/0002 ,  H05B33/0845 ,  H01L2924/00

Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.