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11 条记录 (耗时 0.021 秒)

    METHOD FOR THE PRODUCTION OF A SUBSTRATE
    2.
    发明申请
    METHOD FOR THE PRODUCTION OF A SUBSTRATE 有权
    生产基材的方法

    公开(公告)号：US20070084715A1

    公开(公告)日：2007-04-19

    申请号：US11539218

    申请日：2006-10-06

    申请人： Stanislav Kadlec ,  Eduard Kugler ,  Thomas Halter

    发明人： Stanislav Kadlec ,  Eduard Kugler ,  Thomas Halter

    IPC分类号： C23C14/32 ,  C23C14/00

    CPC分类号： H01J37/3455 ,  C23C14/3407 ,  C23C14/35 ,  C23C14/542 ,  C23C16/50 ,  C23C16/52

    摘要： Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

    摘要翻译： 制造衬底的方法包括建立具有局部不均匀密度分布的等离子体放电，并将衬底暴露于非均匀密度分布的等离子体放电。 通过建立不均匀密度分布和衬底的指定相对运动并建立提供放电的电功率信号和/或可选地提供的进一步电信号的规定时间变化来建立分布，所述另外的电信号将衬底连接到偏置电压 。 当电力信号或其他电信号是AC信号时，信号的指定时间变化解决其调制，并且该方法包括设置变化和移动。

    Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source
    3.
    发明申请
    Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source 有权
    用于制造溅射涂覆的基板，具有这种源的磁控管源和溅射室的方法

    公开(公告)号：US20050199485A1

    公开(公告)日：2005-09-15

    申请号：US10798331

    申请日：2004-03-12

    申请人： Stanislav Kadlec ,  Eduard Kugler ,  Walter Haag

    发明人： Stanislav Kadlec ,  Eduard Kugler ,  Walter Haag

    IPC分类号： H01J37/34 ,  C23C14/35

    CPC分类号： H01J37/3408

    摘要： A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

    摘要翻译： 磁控管源，磁控管处理室和利用真空等离子体处理表面制造衬底的方法，产生并利用沿着衬底表面扫过的非对称不平衡长程磁控管磁场图案，以改善衬底处的离子密度 表面为真空等离子体处理。 长距离场到达衬底表面，其中平均于衬底表面的磁场的分量至少为0.1，优选为1至20，高斯。 等离子体处理可以是例如溅射涂覆或蚀刻。

    Method for reactive sputter coating at least one article
    4.
    发明授权
    Method for reactive sputter coating at least one article 失效
    用于反应性溅射涂覆至少一种制品的方法

    公开(公告)号：US5292417A

    公开(公告)日：1994-03-08

    申请号：US865116

    申请日：1992-04-08

    申请人： Eduard Kugler

    发明人： Eduard Kugler

    IPC分类号： C23C14/34 ,  C23C14/00 ,  H01J37/34 ,  C23C14/54

    CPC分类号： C23C14/0094 ,  C23C14/0042 ,  C23C14/34 ,  H01J37/3405

    摘要： A method and apparatus for performing the method comprising a vacuum treatment chamber containing a target of ohmic conductive material. The target and a workpiece are supported by suitable electrodes. Superimposed DC and AC power is applied to the target to generate a glow discharge in the chamber in which the target is sputtered. Particles sputtered off the target react with a reactive gas in the space between the target and workpiece and the reaction product is deposited upon the workpiece. The operating parameters of the system are selected so that sputtering and deposition are performed in an unstable transition mode between a metallic and a reactive mode whereby particles are deposited on the workpiece to form a layer on the workpiece of lower conductivity than the target material. A feedback arrangement is preferably utilized to maintain operation with the aforesaid unstable transition mode.

    摘要翻译： 一种用于执行包括含有欧姆导电材料靶的真空处理室的方法和装置。 靶和工件由合适的电极支撑。 将叠加的DC和AC电力施加到靶，以在其中溅射靶的腔室中产生辉光放电。 溅射在靶上的颗粒与目标和工件之间的空间中的反应性气体反应，反应产物沉积在工件上。 选择系统的操作参数，使得溅射和沉积在金属和反应模式之间的不稳定过渡模式下进行，由此颗粒沉积在工件上以在工件上形成比目标材​​料低导电性的层。 优选地利用反馈装置来保持与上述不稳定转变模式的操作。

    Gas inlet arrangement
    5.
    发明授权
    Gas inlet arrangement 失效
    进气口布置

    公开(公告)号：US5622606A

    公开(公告)日：1997-04-22

    申请号：US230292

    申请日：1994-04-20

    申请人： Eduard Kugler ,  Jakob Stock ,  Helmut Rudigier

    发明人： Eduard Kugler ,  Jakob Stock ,  Helmut Rudigier

    IPC分类号： C23C14/00 ,  C23C14/34 ,  C23C14/35 ,  C23C16/455 ,  C23F4/00 ,  H01L21/203 ,  H01L21/302 ,  H01L21/3065

    CPC分类号： C23C16/45561 ,  C23C14/0063 ,  C23C14/3407 ,  C23C16/455

    摘要： At least one gas inlet arrangement with several gas outlet openings supplies a working gas and/or a reactive gas to a chamber through a line system with at least one gas source, and at a given gas pressure. The chamber is provided for the treatment of substrates, such as, in particular, by physical or chemical coating processes or by etching processes. The resistance coefficients of the outlet openings are so dimensioned with respect to the sites in the line system at the given gas pressure, that at each outlet opening, a controlled gas flow exits.

    摘要翻译： 具有几个气体出口的至少一个气体入口装置通过具有至少一个气体源的管线系统和给定的气体压力将工作气体和/或反应气体供应到室。 该腔室被设置用于处理衬底，特别是通过物理或化学涂覆工艺或蚀刻工艺。 出口开口的阻力系数相对于在给定气体压力下的管线系统中的位置的尺寸，在每个出口处，受控的气流离开。

    Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source
    6.
    发明授权
    Target arrangement with a circular plate, magnetron for mounting the target arrangement, and process for coating a series of circular disc-shaped workpieces by means of said magnetron source 失效
    具有圆板的目标布置，用于安装目标布置的磁控管，以及通过所述磁控管源涂覆一系列圆形圆形工件的工艺

    公开(公告)号：US6068742A

    公开(公告)日：2000-05-30

    申请号：US701861

    申请日：1996-08-23

    申请人： Helmut Daxinger ,  Walter Haag ,  Eduard Kugler

    发明人： Helmut Daxinger ,  Walter Haag ,  Eduard Kugler

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3423 ,  C23C14/3407 ,  H01J37/3408

    摘要： A target arrangement for a sputtering apparatus has a circular plate target with either a circumferential protrusion or recess which is symmetrical about a central plane through the target, the plane being perpendicular to the central axis of the target and located halfway between the top and bottom surfaces of the target. Each surface of the target is composed primarily of sputtering material. A magnetron for use with the target arrangement for easy changing of the target to sputter using the opposite surface of the target is disclosed. A process for using the target arrangement and magnetron assembly to sputter a work piece is also disclosed.

    摘要翻译： 用于溅射装置的目标装置具有圆形板目标，其具有圆周突起或凹部，所述圆周突起或凹部围绕穿过靶的中心平面对称，该平面垂直于目标的中心轴并且位于顶部和底部表面之间的中间 的目标。 靶的每个表面主要由溅射材料组成。 公开了一种与目标装置一起使用的磁控管，用于使用目标的相对表面容易地改变靶溅射。 还公开了使用目标装置和磁控管组件来溅射工件的方法。

    Optical layer for excimer laser
    7.
    发明授权
    Optical layer for excimer laser 失效
    准分子激光光学层

    公开(公告)号：US5408489A

    公开(公告)日：1995-04-18

    申请号：US33858

    申请日：1993-03-19

    申请人： Eduard Kugler ,  Roland Pfefferkorn

    发明人： Eduard Kugler ,  Roland Pfefferkorn

    IPC分类号： H01S3/225 ,  H01S3/22

    CPC分类号： H01S3/225

    摘要： An optical layer and arrangements with such a layer are proposed which is predominantly of Ta.sub.2 O.sub.5 and having an absorption constant for ultra-violet light less than 0.0075 for light of 308 nm. Such a layer is produced by ion-beam sputtering of a target which target is predominantly made of Ta.sub.2 O.sub.5.

    摘要翻译： 提出了一种光学层和具有这种层的布置，其主要是Ta 2 O 5，并且对于308nm的光，对于紫外光的吸收常数小于0.0075。 这种层是通过靶的主要由Ta 2 O 5制成的靶的离子束溅射产生的。

    Vacuum treatment apparatus
    9.
    发明授权
    Vacuum treatment apparatus 有权
    真空处理设备

    公开(公告)号：US6149783A

    公开(公告)日：2000-11-21

    申请号：US314833

    申请日：1999-05-19

    申请人： Hans Signer ,  Eduard Kugler ,  Klaus Wellerdieck ,  Helmut Rudigier ,  Walter Haag

    发明人： Hans Signer ,  Eduard Kugler ,  Klaus Wellerdieck ,  Helmut Rudigier ,  Walter Haag

    IPC分类号： C23C14/32 ,  C23C14/54 ,  C23C16/50 ,  C23C16/52 ,  C23F4/00 ,  H01J37/32 ,  C23C14/34

    CPC分类号： H01J37/32431 ,  C23C14/32 ,  C23C14/54 ,  H01J2237/0206

    摘要： A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

    摘要翻译： 真空处理装置（图13）包括用于容纳气氛的真空接收器或室（3）。 在接收器中设置用于在大气中产生电荷载体的机构（50,52），电荷载体是形成电隔离材料的类型。 接收器还包括彼此电隔离的工件载体布置（1）和至少两个导电表面（2a，2b）。 直流电源（8）通过在一个导体中的电感器（L66）的相应电导体可操作地连接到导电表面。 在电导体之间连接并联开关装置，以控制导体之间的电流路径。

    Method of controlling a treatment process and vacuum treatment apparatus
    10.
    发明授权
    Method of controlling a treatment process and vacuum treatment apparatus 失效
    控制处理方法和真空处理装置

    公开(公告)号：US5948224A

    公开(公告)日：1999-09-07

    申请号：US887091

    申请日：1997-07-02

    申请人： Hans Signer ,  Eduard Kugler ,  Klaus Wellerdieck ,  Helmut Rudigier ,  Walter Haag

    发明人： Hans Signer ,  Eduard Kugler ,  Klaus Wellerdieck ,  Helmut Rudigier ,  Walter Haag

    IPC分类号： C23C14/32 ,  C23C14/54 ,  C23C16/50 ,  C23C16/52 ,  C23F4/00 ,  H01J37/32 ,  C23C14/34

    CPC分类号： H01J37/32431 ,  C23C14/32 ,  C23C14/54 ,  H01J2237/0206

    摘要： A vacuum treatment apparatus eliminate arcing in a vacuum recipient for containing an atmosphere and having a mechanism for generating electrical charge carriers in the atmosphere. A workpiece carrier arrangement and at least two electro-conductive surfaces are in the recipient and a generator unit having an output is connected to the electro-conductive surfaces. The generator includes a DC generator with an output, and a controlled adjusting unit with an input connected to the output of the DC generator. The controlled adjusting unit generates a first output signal in dependency on an output signal of the DC generator during first timespans, and a second output signal during second timespans. The unit may also have a time-controlled discharge or charge current loop connected from one of the electro-conductive surfaces to the other, with a higher ohmic resistance during the first timespans and a lower ohmic resistance during the second timespans.

    摘要翻译： 真空处理装置消除真空接收器中的电弧，以容纳气氛并具有在大气中产生电荷载体的机构。 工件载体装置和至少两个导电表面在接收器中，并且具有输出的发生器单元连接到导电表面。 发电机包括具有输出的直流发电机和受控调节单元，输入端连接到直流发电机的输出端。 受控调节单元根据第一时间段内的DC发生器的输出信号产生第一输出信号，并且在第二时间段期间产生第二输出信号。 该单元还可以具有时间控制的放电或充电电流环路，从一个导电表面连接到另一个导电表面，在第一次时间段期间具有较高的欧姆电阻，并且在第二次倍数期间具有较低的欧姆电阻。