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    Method for fabricating a component having an electrical contact region
    1.
    发明授权
    Method for fabricating a component having an electrical contact region 有权
    一种具有电接触区域的部件的制造方法

    公开(公告)号：US07435605B2

    公开(公告)日：2008-10-14

    申请号：US11825895

    申请日：2007-07-09

    申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

    摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

    摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

    Method for fabricating a component having an electrical contact region
    2.
    发明申请
    Method for fabricating a component having an electrical contact region 有权
    一种具有电接触区域的部件的制造方法

    公开(公告)号：US20070264740A1

    公开(公告)日：2007-11-15

    申请号：US11825895

    申请日：2007-07-09

    申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

    摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

    摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

    Radiation emitting semi-conductor element
    5.
    发明授权
    Radiation emitting semi-conductor element 有权
    辐射发射半导体元件

    公开(公告)号：US07692204B2

    公开(公告)日：2010-04-06

    申请号：US10567883

    申请日：2004-07-30

    申请人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    发明人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    IPC分类号： H01L29/08

    CPC分类号： H01L33/40 ,  H01L33/02

    摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

    摘要翻译： 一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生有源区（7）的半导体层序列（4），其中半导体 层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接 ），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

    Radiation emitting semi-conductor element
    6.
    发明申请
    Radiation emitting semi-conductor element 有权
    辐射发射半导体元件

    公开(公告)号：US20070181894A1

    公开(公告)日：2007-08-09

    申请号：US10567883

    申请日：2004-07-30

    申请人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    发明人： Wilhelm Stein ,  Reiner Windisch ,  Ralph Wirth ,  Ines Pietzonka

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/02

    摘要： A radiation-emitting semiconductor component with a semiconductor body, including a first principal surface (5), a second principal surface (9) and a semiconductor layer sequence (4) with an electromagnetic radiation generating active zone (7), in which the semiconductor layer sequence (4) is disposed between the first and the second principal surfaces (5, 9), a first current spreading layer (3) is disposed on the first principal surface (5) and electrically conductively connected to the semiconductor layer sequence (4), and a second current spreading layer (10) is disposed on the second principal surface (9) and electrically conductively connected to the semiconductor layer sequence (4).

    摘要翻译： 一种具有半导体主体的辐射发射半导体部件，包括第一主表面（5），第二主表面（9）和具有电磁辐射产生活性区（7）的半导体层序列（4），其中半导体 层序列（4）设置在第一和第二主表面（5,9）之间，第一电流扩散层（3）设置在第一主表面（5）上并与半导体层序列（4）导电连接 ），并且第二电流扩展层（10）设置在第二主表面（9）上并与半导体层序列（4）导电连接。

    Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element
    7.
    发明授权
    Method for producing an area having reduced electrical conductivity within a semiconductor layer and optoelectronic semiconductor element 有权
    用于制造半导体层内的导电性降低的区域和光电子半导体元件的方法

    公开(公告)号：US08293553B2

    公开(公告)日：2012-10-23

    申请号：US11597928

    申请日：2005-04-25

    申请人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    发明人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    IPC分类号： H01L21/00 ,  H01L23/58

    CPC分类号： H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

    摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

    摘要翻译： 在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选 在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接 触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

    Method for Producing an Area having Reduced Electrical Conductivity Within a Semiconductor Layer and Optoelectronic Semiconductor Element
    8.
    发明申请
    Method for Producing an Area having Reduced Electrical Conductivity Within a Semiconductor Layer and Optoelectronic Semiconductor Element 有权
    在半导体层和光电子半导体元件内制造具有降低导电性的区域的方法

    公开(公告)号：US20090008751A1

    公开(公告)日：2009-01-08

    申请号：US11597928

    申请日：2005-04-25

    申请人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    发明人： Stefan Illek ,  Wilhelm Stein ,  Robert Walter ,  Ralph Wirth

    IPC分类号： H01L23/58 ,  C23C14/00

    CPC分类号： H01L21/02461 ,  H01L21/02463 ,  H01L21/02554 ,  H01L21/02573 ,  H01L21/02631 ,  H01L21/7605 ,  H01L33/0062 ,  H01L33/42

    摘要： In a method for producing at least at least one area (8) with reduced electrical conductivity within an electrically conductive III-V semiconductor layer (3), a ZnO layer (1) is applied to the area (8) of the semiconductor layer (3) and subsequently annealed at a temperature preferably between 300° C. and 500° C. The ZnO layer (1) is preferably deposited on the III-V semiconductor layer (3) at a temperature of less than 150° C., preferably at a temperature greater than or equal to 25° C. and less than or equal to 120° C. The area (8) with reduced electrical conductivity is preferably located in a radiation emitting optoelectronic device between the active zone (4) and a connecting contact (7) in order to reduce current injection into the areas of the active zone (4) located opposite to the connecting contact (7).

    摘要翻译： 在用于在导电III-V半导体层（3）内制造具有降低的导电性的至少一个区域（8）的方法中，将ZnO层（1）施加到半导体层的区域（8） 3），然后在优选300℃至500℃的温度下退火。优选在低于150℃的温度下将ZnO层（1）沉积在III-V半导体层（3）上，优选 在大于或等于25℃且小于或等于120℃的温度下，具有降低的导电性的区域（8）优选位于激活区域（4）和连接 触点（7），以便减少电流注入位于与连接触点（7）相对的有源区域（4）的区域中。

    Method for Producing a Thin-Film Semiconductor Chip
    9.
    发明申请
    Method for Producing a Thin-Film Semiconductor Chip 审中-公开
    制造薄膜半导体芯片的方法

    公开(公告)号：US20120070925A1

    公开(公告)日：2012-03-22

    申请号：US13234599

    申请日：2011-09-16

    申请人： Andreas Ploessl ,  Wilhelm Stein

    发明人： Andreas Ploessl ,  Wilhelm Stein

    IPC分类号： H01L33/46

    CPC分类号： H01L33/405 ,  H01L21/76838 ,  H01L33/0079 ,  H01L33/38 ,  H01L2933/0016

    摘要： Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.

    摘要翻译： 基于III / V-III / V半导体复合材料的能够产生电磁辐射的薄膜半导体芯片的制造方法。 在一种方法中，将一系列有源层应用于生长衬底。 施加到有源层的相反侧是介电层。 将激光能量引入电介质层的限定的体积部分中以形成开口。 随后，施加金属层以形成一系列反射层，以用金属材料填充开口并且在有序层的相继侧产生反向的导电接触点。 根据另一种方法，将一系列反射层应用于有源层，并将激光能量施加到反射层的体积部分，以产生反面导电接触点。