公开(公告)号：US07435605B2

公开(公告)日：2008-10-14

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20070264740A1

公开(公告)日：2007-11-15

申请号：US11825895

申请日：2007-07-09

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US07242034B2

公开(公告)日：2007-07-10

申请号：US10770693

申请日：2004-02-02

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01L29/22

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，该半导体层序列具有基于n导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US20050090031A1

公开(公告)日：2005-04-28

申请号：US10770693

申请日：2004-02-02

申请人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

发明人： Stefan Illek ,  Peter Stauss ,  Andreas Ploessl ,  Gudrun Diepold ,  Ines Pietzonka ,  Wilhelm Stein ,  Ralph Wirth ,  Walter Wegleiter

IPC分类号： H01S5/042 ,  H01L33/00 ,  H01L33/30 ,  H01L33/40 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L29/20 ,  H01L29/24 ,  H01L31/0304

CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/30 ,  Y10S438/933

摘要： A method for fabricating a component having an electrical contact region on an n-conducting AlGaInP-based or AlGaInAs-based outer layer of an epitaxially grown semiconductor layer sequence, in which electrical contact material, which includes Au and at least one dopant, is applied and the outer layer is then annealed. The dopant contains at least one element selected from the group consisting of Ge, Si, Sn and Te. Also, a component is disclosed which includes an epitaxially grown semiconductor layer sequence with an active zone which emits electromagnetic radiation, the semiconductor layer sequence having an n-conducting AlGaInP-based or AlGaInAs-based outer layer, to which an electrical contact region is applied using the method described.

摘要翻译： 一种制造在外延生长的半导体层序列的基于n导电AlGaInP基或AlGaInP的外层上具有电接触区域的部件的方法，其中应用包括Au和至少一种掺杂剂的电接触材料 然后将外层退火。 掺杂剂含有选自Ge，Si，Sn和Te中的至少一种元素。 此外，公开了一种组件，其包括具有发射电磁辐射的有源区的外延生长的半导体层序列，所述半导体层序列具有基于导电AlGaInP或AlGaInAs的外层，施加电接触区域 使用所述方法。

公开(公告)号：US07547921B2

公开(公告)日：2009-06-16

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L27/15

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20060145164A1

公开(公告)日：2006-07-06

申请号：US11292389

申请日：2005-11-30

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegleiter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/08 ,  H01L33/20 ,  H01L33/382 ,  H01L33/46

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US06995030B2

公开(公告)日：2006-02-07

申请号：US10346605

申请日：2003-01-17

申请人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

发明人： Stefan Illek ,  Klaus Streubel ,  Walter Wegletter ,  Andreas Ploessl ,  Ralph Wirth

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/10 ,  H01L33/30 ,  H01L33/405 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip has an active layer containing a photon-emitting zone. The active layer is attached to a carrier member at a bonding side of the active layer. The active layer has at least one recess therein with a cross-sectional area that decreases with increasing depth into said active layer proceeding from said bonding side.

公开(公告)号：US20060234482A1

公开(公告)日：2006-10-19

申请号：US11393533

申请日：2006-03-30

申请人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

发明人： Andreas Ploessl ,  Stefan Illek ,  Vincent Grolier

IPC分类号： H01L21/24 ,  H01L21/40 ,  H01L21/265

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/33 ,  H01L33/62 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/157 ,  H01L2924/1579 ,  H01L2924/3025 ,  H01L2924/01083 ,  H01L2924/00014

摘要： A semiconductor chip (1), to which a layer sequence (2) intended for the production of a soldered connection has been applied. The layer sequence (2) comprises a solder layer (15) and an oxidation prevention layer (17), which follows the solder layer (15) as seen from the semiconductor chip (1). A barrier layer (16) is included between the solder layer (15) and the oxidation prevention layer (17). This prevents a constituent of the solder layer (15) from diffusing through the oxidation prevention layer (17) prior to the soldering operation, where it would effect oxidation that is disadvantageous for producing a soldered connection.

摘要翻译： 已经应用了用于生产焊接连接的层序列（2）的半导体芯片（1）。 层序列（2）包括如从半导体芯片（1）所见的跟随焊料层（15）的焊料层（15）和防氧化层（17）。 阻焊层（16）包括在焊料层（15）和防氧化层（17）之间。 这防止焊接层（15）的组成部分在焊接操作之前通过氧​​化防止层（17）扩散，在那里它将产生不利于生产焊接连接的氧化。

公开(公告)号：US08314430B2

公开(公告)日：2012-11-20

申请号：US12597682

申请日：2008-04-25

申请人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

发明人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L21/00

摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

公开(公告)号：US08476644B2

公开(公告)日：2013-07-02

申请号：US12597682

申请日：2008-04-25

申请人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

发明人： Stefan Illek ,  Andreas Ploessl ,  Alexander Heindl ,  Patrick Rode ,  Dieter Eissler

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/46 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic component with a semiconductor body includes an active region suitable for generating radiation, and two electrical contacts arranged on the semiconductor body. The contacts are electrically connected to the active region. The contacts each have a connecting face that faces away from the semiconductor body. The contact faces are located on a connection side of the component and a side of the component that is different from the connection side is mirror-coated. A method for the manufacture of multiple components of this sort is also disclosed.

摘要翻译： 具有半导体本体的光电子部件包括适于产生辐射的有源区和布置在半导体本体上的两个电触头。 触头电连接到有源区。 触点各自具有面向远离半导体主体的连接面。 接触面位于部件的连接侧，并且与连接侧不同的部件的一侧被镜面涂覆。 还公开了用于制造这种多个部件的方法。