公开(公告)号：US20140148557A1

公开(公告)日：2014-05-29

申请号：US14171707

申请日：2014-02-03

申请人： Stephen E. Lehman, JR. ,  James C. Matayabas, JR. ,  Saikumar Jayaraman

发明人： Stephen E. Lehman, JR. ,  James C. Matayabas, JR. ,  Saikumar Jayaraman

IPC分类号： H01L23/24

CPC分类号： H01L23/24 ,  C08G73/10 ,  C08L79/08 ,  C08L2203/20 ,  C08L2205/02 ,  H01L21/563 ,  H01L21/566 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00

摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。

公开(公告)号：US20090146289A1

公开(公告)日：2009-06-11

申请号：US12361485

申请日：2009-01-28

申请人： Stephen E. Lehman, JR. ,  James C. Matayabas, JR. ,  Saikumar Jayaraman

发明人： Stephen E. Lehman, JR. ,  James C. Matayabas, JR. ,  Saikumar Jayaraman

IPC分类号： H01L23/28 ,  C08G73/10

CPC分类号： H01L23/24 ,  C08G73/10 ,  C08L79/08 ,  C08L2203/20 ,  C08L2205/02 ,  H01L21/563 ,  H01L21/566 ,  H01L24/29 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2924/00

摘要： Dendrimer/hyperbranched materials are combined with polyimide to form a low CTE material for use as a dielectric substrate layer or an underfill. In the alternative, ruthenium carbene complexes are used to catalyze ROMP cross-linking reactions in polyimides to produce a class of cross-linkable, thermal and mechanical stable material for use as a dielectric substrate or underfill. In another alternative, dendrimers/hyperbranched materials are synthesized by different methods to produce low viscosity, high Tg, fast curing, mechanically and chemically stable materials for imprinting applications.

摘要翻译： 树枝状聚合物/超支化材料与聚酰亚胺组合以形成用作电介质基底层或底部填充剂的低CTE材料。 另一方面，钌卡宾络合物用于催化聚酰亚胺中的ROMP交联反应，以产生用作电介质基底或底部填充剂的一类可交联，热和机械稳定的材料。 在另一种替代方案中，树枝状大分子/超支化材料通过不同的方法合成，以产生用于印记应用的低粘度，高Tg，快速固化，机械和化学稳定的材料。

公开(公告)号：US20080312393A1

公开(公告)日：2008-12-18

申请号：US12214189

申请日：2008-06-17

申请人： Lisa S. Baugh ,  Stephen E. Lehman, JR. ,  Kenneth B. Wagener ,  Donald N. Schulz ,  Enock Berluche

发明人： Lisa S. Baugh ,  Stephen E. Lehman, JR. ,  Kenneth B. Wagener ,  Donald N. Schulz ,  Enock Berluche

IPC分类号： C08F4/80

CPC分类号： C08F210/02 ,  C08F210/16 ,  C08F4/80 ,  C08F236/20 ,  C08F2500/02 ,  C08F2500/03 ,  C08F220/10 ,  C08F218/00 ,  C08F218/08 ,  C08F232/00

摘要： The present invention is related to a linear functional polymer having repeating units A, B and D. Unit A represents —CH2—, unit B represents and unit D represents where R1 represents a polar functional group. There are at least four A units separating each B unit, each D unit, and each B and D unit. The value y represents the total number of B units and is an integer greater than or equal to 1. The total number of D units is represented by h and is an integer greater than or equal to 0. And x represents the total number of A units and is an integer sufficient that the molar fraction of the B and D units in the linear functional polymer is represented by a value j defined by the equation: j = y + h x + y + h ≤ 0.032 . The present invention is also directed to a method for preparing such linear functional polymers by copolymerizing a first polar substituted monomer and a second non-polar unsubstituted monomer.

摘要翻译： 本发明涉及具有重复单元A，B和D的线性官能聚合物。单元A表示-CH 2 - ，单元B表示，单元D表示其中R 1表示极性官能团。 每个B单元，每个D单元和每个B和D单元分开至少四个A单元。 值y表示B个单位的总数，并且是大于或等于1的整数.D单位的总数由h表示，并且是大于或等于0的整数。x表示A的总数 单位，并且是足以使线性官能聚合物中B和D单元的摩尔分数由以下等式定义的值j表示的整数： < 数学溢出=“滚动”> j = y + h x + y +

公开(公告)号：US20110051376A1

公开(公告)日：2011-03-03

申请号：US12941894

申请日：2010-11-08

申请人： Daewoong Suh ,  Stephen E. Lehman, JR. ,  Mukul Renavikar

发明人： Daewoong Suh ,  Stephen E. Lehman, JR. ,  Mukul Renavikar

IPC分类号： H05K7/00 ,  H05K1/11

CPC分类号： H05K3/3484 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2224/11822 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/136 ,  H01L2224/81011 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H05K3/244 ,  H05K3/3436 ,  H05K2201/0215 ,  H05K2201/0341 ,  H05K2203/0435 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00014

摘要： A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

摘要翻译： 描述了一种微电子组件及其制造方法。 在一个示例中，微电子组件包括具有一个或多个区域以接收一个或多个焊球的表面的微电子器件，所述一个或多个区域具有包括Ni的表面光洁度。 将包含Cu的焊料材料（例如焊剂或糊料）施加到Ni表面光洁度上，并且一个或多个焊球通过在一个或多个焊球之间形成焊料接头的回流工艺耦合到微电子器件，焊料 包含Cu的材料，并且所述一个或多个区域具有包括Ni的表面光洁度。

公开(公告)号：US20100044848A1

公开(公告)日：2010-02-25

申请号：US12610211

申请日：2009-10-30

申请人： Daewoong Suh ,  Stephen E. Lehman, JR. ,  Mukul Renavikar

发明人： Daewoong Suh ,  Stephen E. Lehman, JR. ,  Mukul Renavikar

IPC分类号： H01L23/485

CPC分类号： H05K3/3484 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2224/11822 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13147 ,  H01L2224/136 ,  H01L2224/81011 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1433 ,  H05K3/244 ,  H05K3/3436 ,  H05K2201/0215 ,  H05K2201/0341 ,  H05K2203/0435 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00014

摘要： A microelectronic assembly and method for fabricating the same are described. In an example, a microelectronic assembly includes a microelectronic device having a surface with one or more areas to receive one or more solder balls, the one or more areas having a surface finish comprising Ni. A solder material comprising Cu, such as flux or paste, is applied to the Ni surface finish and one or more solder balls are coupled to the microelectronic device by a reflow process that forms a solder joint between the one or more solder balls, the solder material comprising Cu, and the one or more areas having a surface finish comprising Ni.

摘要翻译： 描述了一种微电子组件及其制造方法。 在一个示例中，微电子组件包括具有一个或多个区域以接收一个或多个焊球的表面的微电子器件，所述一个或多个区域具有包括Ni的表面光洁度。 将包含Cu的焊料材料（例如焊剂或糊料）施加到Ni表面光洁度上，并且一个或多个焊球通过在一个或多个焊球之间形成焊料接头的回流工艺耦合到微电子器件，焊料 包含Cu的材料，并且所述一个或多个区域具有包括Ni的表面光洁度。