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    Concave-hemisphere-patterned organic top-light emitting device
    1.
    发明授权
    Concave-hemisphere-patterned organic top-light emitting device 有权
    凹半图案有机顶发光器件

    公开(公告)号：US08633497B2

    公开(公告)日：2014-01-21

    申请号：US12731249

    申请日：2010-03-25

    申请人： Stephen R. Forrest ,  Michael Slootsky ,  Richard Lunt

    发明人： Stephen R. Forrest ,  Michael Slootsky ,  Richard Lunt

    IPC分类号： H01L51/52

    CPC分类号： H01L51/5203 ,  H01L27/3244 ,  H01L33/24 ,  H01L51/5271 ,  H01L51/5275 ,  H01L2251/5315

    摘要： A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate.

    摘要翻译： 提供第一个设备。 第一器件包括有机发光器件，其还包括设置在第一和第二电极之间的第一电极，第二电极和有机发光层。 优选地，第二电极比第一电极更透明。 有机发光层具有成形为在第一电极的方向上形成凹陷的第一部分和形成为在第二电极的方向上形成突起的第二部分。 第一装置可以包括多个有机发光装置。 凹陷可以具有由局部球体，部分圆柱体，金字塔形或具有台面的金字塔等形成的形状。 突起可以形成在相邻的凹陷之间或者在凹陷和平行于基底的表面之间。

    Light trapping architecture for photovoltaic and photodector applications
    2.
    发明授权
    Light trapping architecture for photovoltaic and photodector applications 有权
    用于光伏和光电二极管应用的光捕获架构

    公开(公告)号：US09412960B2

    公开(公告)日：2016-08-09

    申请号：US13099850

    申请日：2011-05-03

    申请人： Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    发明人： Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    IPC分类号： H01L31/00 ,  H01L51/44 ,  G02B5/08 ,  H01L31/054 ,  H01L31/0232 ,  H01L51/42

    CPC分类号： H01L51/447 ,  G02B5/0808 ,  H01L31/0232 ,  H01L31/0543 ,  H01L31/0547 ,  H01L51/4246 ,  Y02E10/52 ,  Y02E10/549

    摘要： There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

    摘要翻译： 公开了光伏器件结构，其捕获入射光并通过所含的感光材料再循环它，以使光吸收最大化。 例如，公开了光敏光电器件，其包括：包含热塑性树脂的第一反射层; 基本上平行于第一反射层的第二反射层; 在所述第一和第二反射层中的至少一个上的第一透明电极层; 以及与所述第一电极相邻的感光区域，其中所述第一透明电极层基本上平行于所述第一反射层并且邻近所述感光区域，并且其中所述器件具有横向于所述反射层的平面的外表面， 面具有用于入射到设备内部的入射辐射的孔。

    LIGHT TRAPPING ARCHITECTURE FOR PHOTOVOLTAIC AND PHOTODECTOR APPLICATIONS
    3.
    发明申请
    LIGHT TRAPPING ARCHITECTURE FOR PHOTOVOLTAIC AND PHOTODECTOR APPLICATIONS 有权
    用于光伏和光电转换器应用的光线捕捉架构

    公开(公告)号：US20120261558A1

    公开(公告)日：2012-10-18

    申请号：US13099850

    申请日：2011-05-03

    申请人： Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    发明人： Stephen R. Forrest ,  Richard R. Lunt ,  Michael Slootsky

    IPC分类号： H01J40/04

    CPC分类号： H01L51/447 ,  G02B5/0808 ,  H01L31/0232 ,  H01L31/0543 ,  H01L31/0547 ,  H01L51/4246 ,  Y02E10/52 ,  Y02E10/549

    摘要： There is disclosed photovoltaic device structures which trap admitted light and recycle it through the contained photosensitive materials to maximize photoabsorption. For example, there is disclosed a photosensitive optoelectronic device comprising: a first reflective layer comprising a thermoplastic resin; a second reflective layer substantially parallel to the first reflective layer; a first transparent electrode layer on at least one of the first and second reflective layer; and a photosensitive region adjacent to the first electrode, wherein the first transparent electrode layer is substantially parallel to the first reflective layer and adjacent to the photosensitive region, and wherein the device has an exterior face transverse to the planes of the reflective layers where the exterior face has an aperture for admission of incident radiation to the interior of the device.

    摘要翻译： 公开了光伏器件结构，其捕获入射光并通过所含的感光材料再循环它，以使光吸收最大化。 例如，公开了光敏光电器件，其包括：包含热塑性树脂的第一反射层; 基本上平行于第一反射层的第二反射层; 在所述第一和第二反射层中的至少一个上的第一透明电极层; 以及与所述第一电极相邻的感光区域，其中所述第一透明电极层基本上平行于所述第一反射层并且邻近所述感光区域，并且其中所述器件具有横向于所述反射层的平面的外表面， 面具有用于入射到设备内部的入射辐射的孔。

    Polymer wrapped carbon nanotube near-infrared photoactive devices
    5.
    发明授权
    Polymer wrapped carbon nanotube near-infrared photoactive devices 有权
    聚合物包裹碳纳米管近红外光活性器件

    公开(公告)号：US08017863B2

    公开(公告)日：2011-09-13

    申请号：US12419846

    申请日：2009-04-07

    申请人： Stephen R. Forrest ,  Michael S. Arnold ,  Jeramy D. Zimmerman ,  Richard Lunt

    发明人： Stephen R. Forrest ,  Michael S. Arnold ,  Jeramy D. Zimmerman ,  Richard Lunt

    IPC分类号： H01L31/00

    CPC分类号： H01L51/4246 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4253 ,  Y02E10/549

    摘要： A photoactive device includes a photoactive region disposed between and electrically connected to two electrodes where the photoactive region includes a first organic photoactive layer comprising a first donor material and a second organic photoactive layer comprising a first acceptor material. The first donor material contains photoactive polymer-wrapped carbon nanotubes and the photoactive region includes one or more additional organic photoactive material layers disposed between the first donor material layer and the acceptor material layer. The photoactive region creates excitons upon absorption of light in the range of about 400 nm to 1450 nm.

    摘要翻译： 光活性器件包括设置在两个电极之间并电连接到两个电极的光活性区域，其中光活性区域包括包含第一施主材料的第一有机光活性层和包含第一受主材料的第二有机光活性层。 第一供体材料含有光聚合物包裹的碳纳米管，光活性区包括一个或多个另外的有机光活性材料层，其设置在第一施主材料层和受主材料层之间。 光吸收区域在约400nm至1450nm的范围内吸收光时产生激子。

    POLYMER WRAPPED CARBON NANOTUBE NEAR-INFRARED PHOTOACTIVE DEVICES
    6.
    发明申请
    POLYMER WRAPPED CARBON NANOTUBE NEAR-INFRARED PHOTOACTIVE DEVICES 有权
    聚合物包裹碳纳米管近红外光电装置

    公开(公告)号：US20090267060A1

    公开(公告)日：2009-10-29

    申请号：US12419846

    申请日：2009-04-07

    申请人： Stephen R. Forrest ,  Michael S. Arnold ,  Jeramy D. Zimmerman ,  Richard Lunt

    发明人： Stephen R. Forrest ,  Michael S. Arnold ,  Jeramy D. Zimmerman ,  Richard Lunt

    IPC分类号： H01L51/30 ,  H01L51/44

    CPC分类号： H01L51/4246 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/4253 ,  Y02E10/549

    摘要： A photoactive device includes a photoactive region disposed between and electrically connected to two electrodes where the photoactive region includes a first organic photoactive layer comprising a first donor material and a second organic photoactive layer comprising a first acceptor material. The first donor material contains photoactive polymer-wrapped carbon nanotubes and the photoactive region includes one or more additional organic photoactive material layers disposed between the first donor material layer and the acceptor material layer. The photoactive region creates excitons upon absorption of light in the range of about 400 nm to 1450 nm.

    摘要翻译： 光活性器件包括设置在两个电极之间并电连接到两个电极的光活性区域，其中光活性区域包括包含第一施主材料的第一有机光活性层和包含第一受主材料的第二有机光活性层。 第一供体材料含有光聚合物包裹的碳纳米管，光活性区包括一个或多个另外的有机光活性材料层，其设置在第一施主材料层和受主材料层之间。 光吸收区域在约400nm至1450nm的范围内吸收光时产生激子。

    Top-gate bottom-contact organic transistor
    9.
    发明授权
    Top-gate bottom-contact organic transistor 有权
    顶栅底接触有机晶体管

    公开(公告)号：US09496315B2

    公开(公告)日：2016-11-15

    申请号：US12859496

    申请日：2010-08-19

    申请人： Stephen R. Forrest ,  Xin Xu ,  Christopher Kyle Renshaw

    发明人： Stephen R. Forrest ,  Xin Xu ,  Christopher Kyle Renshaw

    IPC分类号： H01L51/44 ,  H01L27/30 ,  B82Y10/00 ,  H01L27/28 ,  H01L51/10 ,  H01L51/00 ,  H01L51/05 ,  H01L51/42

    CPC分类号： H01L27/307 ,  B82Y10/00 ,  H01L27/283 ,  H01L51/0046 ,  H01L51/0078 ,  H01L51/0541 ,  H01L51/105 ,  H01L51/424

    摘要： Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.

    摘要翻译： 提供了顶栅，底接触有机薄膜晶体管。 晶体管可以包括金属双层电极，以帮助器件内的电荷移动。 在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔 沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。