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    Compositions and processes for nanoimprinting
    2.
    发明授权
    Compositions and processes for nanoimprinting 有权
    纳米压印的组成和工艺

    公开(公告)号：US08603386B2

    公开(公告)日：2013-12-10

    申请号：US11980918

    申请日：2007-10-31

    申请人： Stephen Y. Chou ,  Zengli Fu ,  Lei Chen ,  Haixlong Ge

    发明人： Stephen Y. Chou ,  Zengli Fu ,  Lei Chen ,  Haixlong Ge

    IPC分类号： B29C35/08

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： The invention is directed to new nanoimprint resist and thin-film compositions for use in nanoimprinting lithography. The compositions permit economical high-throughput mass production, using nanoimprint processes, of patterns having sub-200 nm, and even sub-50 nm features.

    摘要翻译： 本发明涉及用于纳米压印光刻的新的纳米压印抗蚀剂和薄膜组合物。 该组合物允许使用纳米压印工艺的具有亚200nm，甚至低于50nm特征的图案的经济高通量大批量生产。

    Fast nanoimprinting apparatus using deformale mold
    3.
    发明授权
    Fast nanoimprinting apparatus using deformale mold 有权
    使用变形模具的快速纳米压印装置

    公开(公告)号：US08747092B2

    公开(公告)日：2014-06-10

    申请号：US13011844

    申请日：2011-01-21

    申请人： Wei Zhang ,  Hua Tan ,  Lin Hu ,  Stephen Y. Chou

    发明人： Wei Zhang ,  Hua Tan ,  Lin Hu ,  Stephen Y. Chou

    IPC分类号： B29C59/16 ,  B29C70/44 ,  B29C35/08 ,  B29C43/10

    CPC分类号： B29C59/02 ,  B29L2007/001 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： The invention disclosed apparatuses and methods to do nanoimprint lithography using a deformable mold. Generally, the apparatus has a chamber with a transparent section on its top wall, which is capable of vacuuming and pressurizing. The deformable mold fixed firmly onto a hollow mold holder around its full periphery is attached to top inner surface of the chamber and positioned underneath the transparent section. The central area of the mold is freely accessible from underneath through the opening of the mold holder. An enclosed volume referring to mold mini-chamber is formed between the mold/holder and top wall of the chamber. Inside chamber, a stage assembly is installed. A chuck to vacuumly hold a substrate is mounted on top of the stage assembly. At beginning of the imprinting, the substrate with a layer of resist is positioned underneath the mold at a predetermined gap between them. Then, the substrate is moved up to contact with the mold either under vacuum or under atmosphere. The substrate and mold may be pressed further by introducing higher pressure inside the chamber. After consolidating the resist, the substrate is separated from the mold by either direct pull-down enabled by stage movement or deforming the mold enabled by differential pressure between the mold mini-chamber and the bulk volume of the chamber, or mixing of both.

    摘要翻译： 本发明公开了使用可变形模具进行纳米压印光刻的装置和方法。 通常，该装置具有在其顶壁上具有透明部分的室，其能够进行抽真空和加压。 可变形模具牢固地固定在围绕其整个周边的中空模具架上，附接到室的顶部内表面并且定位在透明部分下方。 模具的中心区域可以通过模具夹具的开口从下面自由进入。 在模具/保持器和腔室的顶壁之间形成涉及模具小室的封闭体积。 内腔，安装了一个舞台组件。 用于真空地保持基板的卡盘安装在平台组件的顶部上。 在刻印开始时，具有抗蚀剂层的基板位于模具下面，处于它们之间的预定间隙。 然后，在真空或大气下，将基板向上移动以与模具接触。 可以通过在室内引入更高的压力来进一步压制基底和模具。 在固化抗蚀剂之后，通过在模具微型室和室的体积之间的差压或通过两者的混合的阶段移动或使模具变形来实现直接下拉，衬底与模具分离。

    Imprint lithography with improved substrate/mold separation
    4.
    发明授权
    Imprint lithography with improved substrate/mold separation 有权
    印刷光刻与改进的基板/模具分离

    公开(公告)号：US08377361B2

    公开(公告)日：2013-02-19

    申请号：US11945033

    申请日：2007-11-26

    申请人： Wei Zhang ,  Hua Tan ,  Lin Hu ,  Stephen Y. Chou

    发明人： Wei Zhang ,  Hua Tan ,  Lin Hu ,  Stephen Y. Chou

    IPC分类号： B29C33/44

    CPC分类号： B29C59/022 ,  B29C2035/0827 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： In imprint lithography, a mold having a pattern of projecting and recessed regions is pressed into a moldable surface on a substrate. The thus-imprinted moldable surface is permitted to at least partially harden to retain the imprint, and the substrate and mold are separated. In accordance with the invention, the substrate is separated from the mold by bending laterally distal regions (regions away from the center toward the edges) of the mold transversely away from the interface and transversely restraining the substrate. The mold can then be easily separated from the substrate by transverse displacement. The separation can be facilitated by providing a mold having a lateral dimension that on at least two sides extends beyond the corresponding lateral dimension of the substrate. Alternatively, the substrate can have a greater lateral extent than the mold, and the mold can be restrained. The distal regions of the substrate can be bent in the transverse direction. Apparatus for effecting such separation is also described.

    摘要翻译： 在压印光刻中，将具有突出和凹陷区域的图案的模具压入基板上的可模制表面中。 允许这样印制的可模塑表面至少部分地硬化以保持印记，并且分离基底和模具。 根据本发明，通过将模具的横向远离区域（远离中心朝向边缘的区域）横向远离界面弯曲并横向限制基底，将基底与模具分离。 然后可以通过横向位移容易地将模具与基底分离。 可以通过提供具有在至少两侧上延伸超过衬底的相应横向尺寸的横向尺寸的模具来促进分离。 或者，基板可以具有比模具更大的横向延伸，并且可以限制模具。 基板的远端区域可以在横向方向上弯曲。 还描述了用于实现这种分离的装置。

    Methods for fabricating large area nanoimprint molds
    5.
    发明授权
    Methods for fabricating large area nanoimprint molds 有权
    制造大面积纳米压印模具的方法

    公开(公告)号：US08192669B2

    公开(公告)日：2012-06-05

    申请号：US12473115

    申请日：2009-05-27

    申请人： Stephen Y. Chou ,  Can Peng ,  Wendi Li ,  Shufeng Bai

    发明人： Stephen Y. Chou ,  Can Peng ,  Wendi Li ,  Shufeng Bai

    IPC分类号： B28B11/08 ,  B29C59/00

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  Y10S977/887

    摘要： This invention relates to the fabrication of large area nanoimprint molds having complex patterns with minimal or no use of direct-writing, such as electron beam lithography, ion, laser beam, or mechanical beam lithography. This can be accomplished by forming a pattern of simple nanoscale features and converting the simple features into more complex nanoscale features by a process comprising shadow deposition. The process may also include steps of uniform deposition, etching and smoothing depending on the shape of the complex features.

    摘要翻译： 本发明涉及具有复杂图案的大面积纳米压印模具的制造，其具有最少或不使用直接写入，例如电子束光刻，离子，激光束或机械光束光刻。 这可以通过形成简单的纳米尺度特征的图案并通过包括阴影沉积的方法将简单特征转换成更复杂的纳米尺度特征来实现。 该方法还可以包括根据复杂特征的形状的均匀沉积，蚀刻和平滑的步骤。

    METHOD AND APPRATUS FOR HIGH DENSITY NANOSTRUCTURES
    7.
    发明申请
    METHOD AND APPRATUS FOR HIGH DENSITY NANOSTRUCTURES 审中-公开
    高密度纳米结构的方法与装置

    公开(公告)号：US20080213469A1

    公开(公告)日：2008-09-04

    申请号：US11931273

    申请日：2007-10-31

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： B05D5/12 ,  B29C59/02 ,  B44C1/22

    CPC分类号： G03F7/0002 ,  B82Y10/00

    摘要： A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2 topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS has been fabricated using nanoimprint lithography. The reading and wearing of such Nano-CDS have been studied using scanning proximal probe methods. Using a tapping mode, a Nano-CD was read 1000 times without any detectable degradation of the disk or the silicon probe tip. In accelerated wear tests with a contact mode, the damage threshold was found to be 19/N. This indicates that in a tapping mode, both the Nano-CD and silicon probe tip should have a lifetime that is at least four orders of magnitude longer than that at the damage threshold.

    摘要翻译： 提供了一种用于高密度纳米结构的方法和装置。 该方法和装置包括纳米紧凑型光盘，例如纳米光盘（Nano-CDS）。 在一个实施例中，已经使用纳米压印光刻制造了比商业CDS高近三个数量级的400Gbit / in 2拓扑位密度纳米CD。 使用扫描近端探针方法研究了这种纳米CDS的阅读和佩戴。 使用敲击模式，Nano-CD读取1000次，没有任何可检测到的光盘劣化或硅探针尖端。 在接触模式的加速磨损试验中，发现损伤阈值为19 / N。 这表明在攻丝模式下，纳米CD和硅探针尖端都应该具有比破坏阈值长至少四个数量级的寿命。

    Nanoimprint lithography
    9.
    发明授权
    Nanoimprint lithography 失效
    纳米压印光刻

    公开(公告)号：US5772905A

    公开(公告)日：1998-06-30

    申请号：US558809

    申请日：1995-11-15

    申请人： Stephen Y. Chou

    发明人： Stephen Y. Chou

    IPC分类号： B29C59/02 ,  G03F7/00 ,  G03F9/00 ,  H01L21/304

    CPC分类号： B29C59/022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7053 ,  B29C2059/023 ,  B29C59/026 ,  Y10S977/887

    摘要： A lithographic method and apparatus for creating ultra-fine (sub-25 nm) patterns in a thin film coated on a substrate is provided, in which a mold having at least one protruding feature is pressed into a thin film carried on a substrate. The protruding feature in the mold creates a recess of the thin film. The mold is removed from the film. The thin film then is processed such that the thin film in the recess is removed exposing the underlying substrate. Thus, the patterns in the mold is replaced in the thin film, completing the lithography. The patterns in the thin film will be, in subsequent processes, reproduced in the substrate or in another material which is added onto the substrate.

    摘要翻译： 提供了一种用于在涂覆在基板上的薄膜中产生超细（次25nm）图案的光刻方法和装置，其中具有至少一个突出特征的模具被压入载置在基板上的薄膜中。 模具中的突出特征产生薄膜的凹部。 模具从薄膜中取出。 然后对薄膜进行处理，使得去除暴露下面的基底的凹槽中的薄膜。 因此，在薄膜中更换模具中的图案，完成光刻。 在随后的工艺中，薄膜中的图案将在衬底中或在添加到衬底上的另一种材料中再现。

    Process for adjusting the size and shape of nanostructures
    10.
    发明授权
    Process for adjusting the size and shape of nanostructures 有权

    公开(公告)号：US08163657B2

    公开(公告)日：2012-04-24

    申请号：US12435219

    申请日：2009-05-04

    申请人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    发明人： Stephen Y. Chou ,  Ying Wang ,  Xiaogan Liang ,  Yixing Liang

    IPC分类号： H01L21/477

    CPC分类号： H01L21/0273 ,  Y10S977/888 ,  Y10S977/90

    摘要： In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.