公开(公告)号：US5262610A

公开(公告)日：1993-11-16

申请号：US677048

申请日：1991-03-29

申请人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

发明人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

IPC分类号： H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32256 ,  H01J37/32357

摘要： A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.

摘要翻译： 远程微波等离子体发生器包括两部分的组合，可调谐微波施加器和双壁水冷石英/蓝宝石管。 可调谐波导管施加器是一个不导电的可调节波导管，其中插入有石英/蓝宝石管。 可调节端距离管的中心线的四分之一的引导波长，另一侧距离较小0.1英寸，因此允许施加器与三根短线调谐器一起使用以实现最佳耦合。

公开(公告)号：US4988644A

公开(公告)日：1991-01-29

申请号：US355942

申请日：1989-05-23

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Steve S. Huang ,  Lee M. Loewenstein ,  Jeff D. Achenbach

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Steve S. Huang ,  Lee M. Loewenstein ,  Jeff D. Achenbach

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  Y10S148/051

摘要： An apparatus and a method for the etching of semiconductor materials is disclosed. The apparatus includes a process chamber which includes a plasma generator remote from and in fluid communication with the process chamber. The remote plasma generator includes an inlet tube, a discharge tube in fluid communication with the inlet tube, an excitation cavity surrounding the discharge tube, an outlet tube in fluid communication with the discharge tube and a process chamber, and an injection tube in the outlet tube.

摘要翻译： 公开了用于蚀刻半导体材料的设备和方法。 该装置包括处理室，该处理室包括远离处理室并且与处理室流体连通的等离子体发生器。 远程等离子体发生器包括入口管，与入口管流体连通的放电管，围绕放电管的激发腔，与放电管流体连通的出口管和处理室，以及出口中的注射管 管。

公开(公告)号：US4867841A

公开(公告)日：1989-09-19

申请号：US203585

申请日：1988-05-27

申请人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

发明人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

IPC分类号： H01L21/3213

CPC分类号： H01L21/32137

摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.

摘要翻译： 用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度 温度。

公开(公告)号：US4842676A

公开(公告)日：1989-06-27

申请号：US122605

申请日：1987-11-17

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

IPC分类号： C23F4/00 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.

摘要翻译： 用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻 和光致抗蚀剂和各向异性。

公开(公告)号：US4842686A

公开(公告)日：1989-06-27

申请号：US75016

申请日：1987-07-17

申请人： Cecil J. Davis ,  Lee M. Loewenstein ,  Robert T. Matthews ,  John I. Jones ,  Rhett B. Jucha

发明人： Cecil J. Davis ,  Lee M. Loewenstein ,  Robert T. Matthews ,  John I. Jones ,  Rhett B. Jucha

IPC分类号： H01L21/302 ,  C23C16/48 ,  C23C16/517 ,  C23C16/54 ,  G03F7/20 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/677

CPC分类号： G03F7/70808 ,  C23C16/482 ,  C23C16/517 ,  C23C16/54 ,  G03F7/70866

摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

公开(公告)号：US4822450A

公开(公告)日：1989-04-18

申请号：US198632

申请日：1988-05-18

申请人： Cecil J. Davis ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Dean W. Freeman ,  John I. Jones

发明人： Cecil J. Davis ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Dean W. Freeman ,  John I. Jones

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  H01L21/306

CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

摘要： A processing apparatus and method compatible with a vacuum process system for wafers, wherein an in situ source of ultraviolet light is provided to enhance chemical activity at the wafer surface, and a remote plasma source is provided in the process gas flow upstream of the wafer, to provide activated species to the wafer face, and a radiatively coupled heat source is also provided so that the wafer can be rapidly thermally cycled.

摘要翻译： 一种与用于晶片的真空处理系统兼容的处理装置和方法，其中提供了原位的紫外光源以增强晶片表面的化学活性，并且在晶片上游的工艺气体流中提供远程等离子体源， 以向晶片表面提供活化物质，并且还提供辐射耦合的热源，使得晶片可以快速热循环。

公开(公告)号：US4820377A

公开(公告)日：1989-04-11

申请号：US74422

申请日：1987-07-16

申请人： Cecil J. Davis ,  Robert T. Matthews ,  Rhett B. Jucha ,  Lee M. Loewenstein

发明人： Cecil J. Davis ,  Robert T. Matthews ,  Rhett B. Jucha ,  Lee M. Loewenstein

IPC分类号： C23C14/22 ,  C23C14/24 ,  C23C16/48 ,  C23C16/517 ,  C23C16/54 ,  C23F4/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： C23C16/481 ,  C23C16/517 ,  C23C16/54 ,  Y10S438/905

摘要： A process module having remote plasma and in situ plasma generators, and a radiant heater, which represent three separate energy sources. The three sources can be used singly or in any combination and can be separately controllable.

公开(公告)号：US5248636A

公开(公告)日：1993-09-28

申请号：US892460

申请日：1992-06-02

申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

公开(公告)号：US4886570A

公开(公告)日：1989-12-12

申请号：US282993

申请日：1988-12-02

申请人： Cecil J. Davis ,  Robert T. Matthews ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Randall C. Hildenbrand ,  John I. Jones

发明人： Cecil J. Davis ,  Robert T. Matthews ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Randall C. Hildenbrand ,  John I. Jones

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/52 ,  C23C16/54

CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/52 ,  C23C16/54

摘要： A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.

摘要翻译： 具有远程等离子体和原位等离子体发生器，紫外线源和辐射加热器的处理模块，其表示四个单独的能量源。 四种来源可以单独使用，也可以任意组合使用，可单独使用。

公开(公告)号：US4878994A

公开(公告)日：1989-11-07

申请号：US174649

申请日：1988-03-29

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Tom Tang ,  Lee M. Loewenstein

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Tom Tang ,  Lee M. Loewenstein

IPC分类号： C04B41/53 ,  C04B41/91 ,  C23F4/00 ,  H01L21/3213

CPC分类号： C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  H01L21/32136

摘要： A process for the etching of titanium containing film which utilizes both in situ and remote plasmas, and a gas mixture for the plasmas which comprises a halogen gas at low pressure and moderate temperature to produce an etch which is both selective to selected materials, for example, titanium silicide etc., and anisotropic.

摘要翻译： 用于蚀刻含钛膜的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包括在低压和中等温度下的卤素气体，以产生对所选材料选择性的蚀刻，例如 ，硅化钛等，各向异性。