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公开(公告)号:US08829546B2
公开(公告)日:2014-09-09
申请号:US11353647
申请日:2006-02-13
申请人: Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
发明人: Steven P. DenBaars , Eric J. Tarsa , Michael Mack , Bernd Keller , Brian Thibeault , Adam W. Saxler
IPC分类号: H01L33/02 , H01L33/08 , H01L33/30 , H01L33/46 , H01S5/40 , H01L33/34 , H01L27/15 , H01L33/50 , H01L25/075
CPC分类号: H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要: A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译: 一种固态发光器件,包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。 响应于穿过掺杂层的电偏压,有源区域以预定波长发光。 包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。 吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。 发射体结构和衬底上设置的吸收层包括衬底。
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公开(公告)号:US07202506B1
公开(公告)日:2007-04-10
申请号:US09528262
申请日:2000-03-17
IPC分类号: H01L33/00
CPC分类号: H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译: 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管(LED)。 掺杂剂离子吸收来自LED有源层的一些或全部光,将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态,并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光,激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时,它们发出红光,并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层,使得LED发射绿色,蓝色,红色光和UV光,其组合以产生白光。 或者,它可以具有一个活性层并在掺杂有Cr,Ti和Co的蓝宝石衬底上生长,使得衬底吸收UV光并发出蓝色,绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器,其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。
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公开(公告)号:US08035117B2
公开(公告)日:2011-10-11
申请号:US11484233
申请日:2006-07-10
IPC分类号: H01L33/00
CPC分类号: H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition elements. The dopant ions absorb some or all of the light from the LED's active layer, pumping the dopant ion electrons to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green, blue and UV light, such that the LED emits green, blue, red and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state lasers having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth of transition elements.
摘要翻译: 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管(LED)。 掺杂剂离子吸收来自LED有源层的一些或全部光,将掺杂剂离子电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态,并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光,激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时,它们发出红光,并且一些红光将从LED的表面发射。 LED还可以具有发射绿色,蓝色和紫外光的有源层,使得LED发射绿色,蓝色,红色和紫外光,结合以产生白光。 或者,它可以具有一个活性层并在掺杂有Cr,Ti和Co的蓝宝石衬底上生长,使得衬底吸收UV光并发出蓝色,绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个有源层发射紫外光的固态激光器,其中激光生长在掺杂有一个或多个稀土过渡元素的蓝宝石衬底上。
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公开(公告)号:US07084436B2
公开(公告)日:2006-08-01
申请号:US10815426
申请日:2004-03-31
IPC分类号: H01L33/00
CPC分类号: H01L33/30 , H01L25/0756 , H01L27/15 , H01L27/153 , H01L33/08 , H01L33/343 , H01L33/502 , H01L33/504 , H01L2924/0002 , H01S3/0627 , H01S3/0941 , H01S3/09415 , H01S3/1623 , H01S3/1628 , H01S5/0206 , H01S5/0287 , H01S5/1032 , H01S5/183 , H01S5/18361 , H01S5/32341 , H01L2924/00
摘要: A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.
摘要翻译: 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管(LED)。 掺杂剂离子吸收来自LED有源层的一些或全部光,将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态,并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光,激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时,它们发出红光,并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层,使得LED发出绿色,蓝色,红色光和UV光,其组合以产生白光。 或者,它可以具有一个活性层并在掺杂有Cr,Ti和Co的蓝宝石衬底上生长,使得衬底吸收UV光并发出蓝色,绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器,其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。
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公开(公告)号:US20090166658A1
公开(公告)日:2009-07-02
申请号:US12360216
申请日:2009-01-27
申请人: David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
摘要翻译: 发光二极管包括具有氮化镓基n型层,有源区和氮化镓基p型层的二极管区。 在氮化镓基p型层上设置第一反射层,在氮化镓系n型层上设置第二反射层。 还可以提供接合层,安装支架,引线接合和/或透明氧化物层。
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公开(公告)号:US07420222B2
公开(公告)日:2008-09-02
申请号:US11842350
申请日:2007-08-21
申请人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.
摘要翻译: 发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底,其被图案化以在横截面中限定多个基座,其从第一面朝向 第二张脸。 第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。 配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域,使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。 在安装支撑件和二极管区域之间设置反射器,其被配置为将从二极管区域发射的光反射回二极管区域,穿过对于预定波长范围内的光辐射透明的基板和从多个 在二极管区域施加电压时, 在反射器和二极管区域之间设置一层氧化铟锡(ITO)。
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公开(公告)号:US08426881B2
公开(公告)日:2013-04-23
申请号:US12360216
申请日:2009-01-27
申请人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: A light emitting diode includes a diode region having a gallium nitride based n-type layer, an active region and a gallium nitride based p-type layer. A first reflector layer is provided on the gallium nitride based p-type layer, and a second reflector layer is provided on the gallium nitride based n-type layer. Bonding layers, a mounting support, a wire bond and/or transparent oxide layers also may be provided.
摘要翻译: 发光二极管包括具有氮化镓基n型层,有源区和氮化镓基p型层的二极管区。 在氮化镓基p型层上设置第一反射层,在氮化镓系n型层上设置第二反射层。 还可以提供接合层,安装支架,引线接合和/或透明氧化物层。
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公开(公告)号:US20100283077A1
公开(公告)日:2010-11-11
申请号:US12835366
申请日:2010-07-13
申请人: David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
摘要翻译: 发光二极管包括包含氮化镓基n型层,有源区和氮化镓基p型层的二极管区。 在氮化镓基n型层上提供衬底,并与二极管区域光学匹配。 衬底具有远离氮化镓基n型层的第一面,与氮化镓基n型层相邻的第二面和其间的侧壁。 侧壁的至少一部分是斜面的,以便倾斜地延伸到第一和第二面。 可以在与衬底相对的氮化镓基p型层上设置反射器。 此外,二极管区域可以比衬底的第二面宽,并且可以包括从第一面远离第一面和第二面的台面。
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公开(公告)号:US08692277B2
公开(公告)日:2014-04-08
申请号:US12835366
申请日:2010-07-13
申请人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
摘要翻译: 发光二极管包括包含氮化镓基n型层,有源区和氮化镓基p型层的二极管区。 在氮化镓基n型层上提供衬底,并与二极管区域光学匹配。 衬底具有远离氮化镓基n型层的第一面,与氮化镓基n型层相邻的第二面和其间的侧壁。 侧壁的至少一部分是斜面的,以便倾斜地延伸到第一和第二面。 可以在与衬底相对的氮化镓基p型层上设置反射器。 此外,二极管区域可以比衬底的第二面宽,并且可以包括从第一面远离第一面和第二面的台面。
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公开(公告)号:US07026659B2
公开(公告)日:2006-04-11
申请号:US10859635
申请日:2004-06-03
申请人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人: David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号: H01L33/00
CPC分类号: H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要: Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.
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