Method to improve the control of electro-polishing by use of a plating electrode in an electrolyte bath
    1.
    发明申请
    Method to improve the control of electro-polishing by use of a plating electrode in an electrolyte bath 审中-公开
    通过在电解液浴中使用电镀电极来改善电抛光控制的方法

    公开(公告)号:US20060185986A1

    公开(公告)日:2006-08-24

    申请号:US11409377

    申请日:2006-04-21

    IPC分类号: B23H3/00

    CPC分类号: C25F7/02

    摘要: A method and apparatus which uses a plating electrode in an electrolyte bath. The plating electrode works to purify an electrolyte polishing solution during the electro-polishing process. Preferably, the plating electrode is employed in a closed loop feedback system. The plating electrode may be powered by a power supply which is controlled by a controller. A sensor may be connected to the controller and the sensor may be configured to sense a characteristic (for example, but not limited to: resistance, conductance or optical transmission, absorption of light, etc.) of the electrolyte bath, which tends to indicate the level of saturation. Preferably, the plating electrode is easily replaceable.

    摘要翻译: 在电解液槽中使用电镀电极的方法和装置。 电镀电极用于在电抛光过程中净化电解抛光液。 优选地,电镀电极用于闭环反馈系统中。 电镀电极可以由控制器控制的电源供电。 传感器可以连接到控制器,并且传感器可以被配置为感测电解液浴的特性(例如但不限于:电阻,电导或光传输,光的吸收等),其倾向于指示 饱和度水平。 优选地,电镀电极易于更换。

    Method for achieving wafer contact for electro-processing
    2.
    发明申请
    Method for achieving wafer contact for electro-processing 审中-公开
    用于实现电加工的晶片接触的方法

    公开(公告)号:US20050037620A1

    公开(公告)日:2005-02-17

    申请号:US10641811

    申请日:2003-08-15

    摘要: A conductive type of seed or process film is used to cover the front side, the side, and at least a portion of the back side of a semiconductor wafer. The portion of the film which is on the back side of the wafer acts as contact for the electro-plating or electro-polishing process, thereby obviating the need for any front side contact. During the electro-process, the wafer can be positioned on a backing plate which supports the wafer as well as contacts which engage at least a portion of the conductive layer on the back side of the wafer. In depositing the conductive seed or process film, the wafer is positioned on a pedestal which has a diameter that is smaller than a diameter of the wafer. The difference in the pedestal and wafer diameters then becomes the area where the conductive seed or process film covers the back side of the wafer. The conductive film can be easily removed during subsequent wafer processing.

    摘要翻译: 使用导电类型的种子或处理膜来覆盖半导体晶片的正面,侧面和背面的至少一部分。 位于晶片背面的薄膜的部分作为电镀或电抛光工艺的接触,从而避免了任何前侧接触的需要。 在电工艺期间,晶片可以定位在支撑晶片的背板上,以及与晶片背面上的导电层的至少一部分接合的触点。 在沉积导电种子或处理膜时,将晶片定位在直径小于晶片直径的基座上。 基座和晶片直径之间的差异成为导电种子或处理膜覆盖晶片背面的区域。 导电膜可以在随后的晶片处理期间容易地去除。

    METHOD AND CONTROL SYSTEM FOR IMPROVING CMP PROCESS BY DETECTING AND REACTING TO HARMONIC OSCILLATION
    3.
    发明申请
    METHOD AND CONTROL SYSTEM FOR IMPROVING CMP PROCESS BY DETECTING AND REACTING TO HARMONIC OSCILLATION 失效
    通过检测和反应谐波振荡来改善CMP工艺的方法和控制系统

    公开(公告)号:US20050181706A1

    公开(公告)日:2005-08-18

    申请号:US10779966

    申请日:2004-02-17

    IPC分类号: B24B37/04 B24B49/10 B24B49/00

    CPC分类号: B24B37/005 B24B49/10

    摘要: A method and control system for detecting harmonic oscillation in a chemical mechanical polishing process and reacting thereto, such as by taking steps to at least one of: 1) reduce or eliminate the harmonic oscillation; and 2) counter the noise which is associated with the harmonic oscillation. By reducing or eliminating harmonic oscillation, films with reduced structure strengths including low k dielectric films can be used. By countering the noise, the quality of the work environment is improved.

    摘要翻译: 一种用于检测化学机械抛光工艺中的谐波振荡并与其反应的方法和控制系统,例如通过采取以下步骤中的至少一个步骤:1)减少或消除谐波振荡; 和2)对抗与谐波振荡相关的噪声。 通过减少或消除谐波振荡,可以使用包括低k电介质膜的具有降低的结构强度的膜。 通过对付噪声,提高了工作环境的质量。

    Method to use a laser to perform the edge clean operation on a semiconductor wafer
    4.
    发明申请
    Method to use a laser to perform the edge clean operation on a semiconductor wafer 审中-公开
    使用激光对半导体晶片执行边缘清洁操作的方法

    公开(公告)号:US20050109369A1

    公开(公告)日:2005-05-26

    申请号:US11014476

    申请日:2004-12-16

    摘要: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

    摘要翻译: 一种用于在半导体晶片上执行边缘清洁操作的方法。 使用激光束来精确地清洁晶片的边缘。 将晶片与卡盘同心地夹紧并以可选择的速度旋转,优选在10rpm至1,000rpm的范围内。 可变功率的激光束通过喷嘴以倾斜的角度朝向晶片的边缘引导,惰性吹扫气体通过喷嘴同时通过。 激光束在晶片的边缘移除不需要的沉积物,并且气体用于吹除残留物并防止在晶片的其它部分上产生积渣。 该方法优选在排气室中进行。

    Abrasive electrolyte
    5.
    发明申请
    Abrasive electrolyte 审中-公开
    磨料电解液

    公开(公告)号:US20050087451A1

    公开(公告)日:2005-04-28

    申请号:US10693143

    申请日:2003-10-24

    IPC分类号: B23H5/08 C25F3/02 B23H3/08

    CPC分类号: B23H5/08 C25F3/02

    摘要: An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.

    摘要翻译: 一种研磨电解质溶液,适用于在基材上稀释一层而不污染基材。 磨蚀性电解质溶液包括导电流体,其基本上不含在期望的工作电压电势范围内是反应性的材料,并且基本上不含在期望的工作电压电势范围内抑制所需反应的材料。 还包括具有足够小以使颗粒基本上保持悬浮在导电流体中的尺寸的磨料颗粒,并且足够大以使颗粒在研磨电解质上提供所需层的侵蚀 溶液被迫靠在基底上的层上。

    Method to monitor pad wear in CMP processing
    7.
    发明申请
    Method to monitor pad wear in CMP processing 有权
    在CMP处理中监测焊盘磨损的方法

    公开(公告)号:US20050287927A1

    公开(公告)日:2005-12-29

    申请号:US10879629

    申请日:2004-06-29

    摘要: A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.

    摘要翻译: 衬垫槽分析器和相关联的方法被配置为评估衬垫上的凹槽并确定衬垫的磨损程度。 垫槽分析器可以被配置为通过接触或非接触过程来监测凹槽。 在接触处理中,垫槽分析器可以包括物理接触并沿着垫移动的触笔。 当触控笔沿着焊盘移动时,触针落入焊盘中的凹槽中,产生信号,并且触针监视器使用信号来确定焊盘在多大程度上被磨损。 触控笔监视器可以配置为与通用工具控制器进行通信。 在无接触过程中,焊盘槽分析仪可以采取几种不同的形式。

    Electropolishing pad
    8.
    发明申请
    Electropolishing pad 审中-公开
    电抛光垫

    公开(公告)号:US20050087450A1

    公开(公告)日:2005-04-28

    申请号:US10693142

    申请日:2003-10-24

    IPC分类号: B23H3/00 B23H5/08 C25F3/02

    CPC分类号: C25F3/02 B23H5/08

    摘要: An electropolishing pad adapted for thinning a layer on a substrate, without damaging a delicate underlying layer in the substrate. The electropolishing pad includes a pad formed of an electrically conductive material, for applying a desired voltage potential through the electropolishing pad to electrolytically erode the layer on the substrate. An operating surface on the pad physically erodes the layer on the substrate. The operating surface has a roughness that is not so great as to create friction sufficient to induce a shearing force that damages the delicate underlying layer in the substrate, but great enough so as to physically erode the layer on the substrate.

    摘要翻译: 一种电抛光垫,其适于使基底上的层变薄,而不会损坏基底中的精细的下层。 电抛光垫包括由导电材料形成的焊盘,用于通过电抛光垫施加期望的电压电位以电解侵蚀基板上的层。 垫上的操作表面物理地侵蚀基底上的层。 操作表面的粗糙度不大,以致于产生足以引起剪切力的摩擦力,该剪切力破坏了衬底中精细的下层,但足够大,以便物理地侵蚀衬底上的层。

    Method to monitor pad wear in CMP processing
    9.
    发明授权
    Method to monitor pad wear in CMP processing 有权
    在CMP处理中监测焊盘磨损的方法

    公开(公告)号:US07198546B2

    公开(公告)日:2007-04-03

    申请号:US10879629

    申请日:2004-06-29

    IPC分类号: B24B49/00

    摘要: A pad groove analyzer and associated method configured to assess the grooves on the pad and determine how worn the pad is. The pad groove analyzer may be configured to monitor the grooves via a contact or no-contact process. In a contact process, the pad groove analyzer may include a stylus which physically contacts and moves along the pad. As the stylus falls into the grooves in the pad as the stylus moves along the pad, signals are created, and a stylus monitor uses the signals to determine to what extent the pad is worn. The stylus monitor can be configured to communicate with the general tool controller. In a no-contact process, the pad groove analyzer may take several different forms.

    摘要翻译: 衬垫槽分析器和相关联的方法被配置为评估衬垫上的凹槽并确定衬垫的磨损程度。 垫槽分析器可以被配置为通过接触或非接触过程来监测凹槽。 在接触处理中,垫槽分析器可以包括物理接触并沿着垫移动的触笔。 当触控笔沿着焊盘移动时,触针落入焊盘中的凹槽中,产生信号,并且触针监视器使用信号来确定焊盘在多大程度上被磨损。 触控笔监视器可以配置为与通用工具控制器进行通信。 在无接触过程中,焊盘槽分析仪可以采取几种不同的形式。

    Abrasive Electrolyte
    10.
    发明申请
    Abrasive Electrolyte 审中-公开
    磨料电解液

    公开(公告)号:US20060219572A1

    公开(公告)日:2006-10-05

    申请号:US11423686

    申请日:2006-06-12

    IPC分类号: B23H3/00

    CPC分类号: B23H5/08 C25F3/02

    摘要: An abrasive electrolyte solution adapted for thinning a layer on a substrate without contaminating the substrate. The abrasive electrolyte solution includes an electrically conductive fluid that is substantially free of materials that are reactive within a desired operating voltage potential range, and substantially free of materials that inhibit desired reactions within the desired operating voltage potential range. Also included are abrasive particles that have a size that is small enough for the particles to substantially remain in suspension in the electrically conductive fluid, and large enough for the particles to provide a desired degree of erosion of the layer on the substrate when the abrasive electrolyte solution is forced against the layer on the substrate.

    摘要翻译: 一种研磨电解质溶液,适用于在基材上稀释一层而不污染基材。 磨蚀性电解质溶液包括导电流体,其基本上不含在期望的工作电压电势范围内是反应性的材料,并且基本上不含在期望的工作电压电势范围内抑制所需反应的材料。 还包括具有足够小以使颗粒基本上保持悬浮在导电流体中的尺寸的磨料颗粒,并且足够大以使颗粒在研磨电解质上提供所需层的侵蚀 溶液被迫靠在基底上的层上。