公开(公告)号：US20110210352A1

公开(公告)日：2011-09-01

申请号：US13034279

申请日：2011-02-24

申请人： Su Yeol LEE ,  Yong Tae KIM ,  Jin Bock LEE ,  Gi Bum KIM

发明人： Su Yeol LEE ,  Yong Tae KIM ,  Jin Bock LEE ,  Gi Bum KIM

IPC分类号： H01L33/08

CPC分类号： H01L27/156 ,  H01L24/24 ,  H01L27/153 ,  H01L33/30 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

摘要翻译： 一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。 发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

公开(公告)号：US20130029445A1

公开(公告)日：2013-01-31

申请号：US13558051

申请日：2012-07-25

申请人： Gi Bum KIM ,  Won Goo HUR ,  Seung Woo CHOI ,  Seung Jae LEE ,  Si Hyuk LEE ,  Tae Hun KIM

发明人： Gi Bum KIM ,  Won Goo HUR ,  Seung Woo CHOI ,  Seung Jae LEE ,  Si Hyuk LEE ,  Tae Hun KIM

IPC分类号： H01L33/02

CPC分类号： H01L33/007 ,  H01L33/0095 ,  H01L33/20

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: preparing a substrate including first and second main surfaces opposing each other; forming a plurality of protruding parts in the first main surface of the substrate; forming a light emitting stack on the first main surface on which the plurality of protruding parts are formed; forming a plurality of light emitting structures by removing portions of the light emitting stack formed in regions corresponding to groove parts around the plurality of protruding parts; and separating the substrate along the groove parts.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：制备包括彼此相对的第一和第二主表面的衬底; 在基板的第一主表面上形成多个突出部分; 在形成有所述多个突出部的所述第一主表面上形成发光层; 通过去除形成在与所述多个突出部分周围的槽部分相对应的区域中的所述发光堆叠的部分来形成多个发光结构; 以及沿着所述凹槽部分分离所述基底。

公开(公告)号：US20120025246A1

公开(公告)日：2012-02-02

申请号：US13167396

申请日：2011-06-23

申请人： Tae Hun KIM ,  Gi Bum KIM ,  Won Goo HUR ,  Young Sun KIM ,  Ki Sung KIM

发明人： Tae Hun KIM ,  Gi Bum KIM ,  Won Goo HUR ,  Young Sun KIM ,  Ki Sung KIM

IPC分类号： H01L33/58 ,  B82Y40/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L2933/0091

摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模 以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成 发光堆叠在基板的第一和第二不平坦结构上。

公开(公告)号：US20160149086A1

公开(公告)日：2016-05-26

申请号：US14799675

申请日：2015-07-15

申请人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

发明人： Jae In SIM ,  Sang Yeob SONG ,  Jong Hoon HA ,  Gi Bum KIM ,  Seung Woo CHOI

IPC分类号： H01L33/46 ,  H01L33/50 ,  H01L33/62 ,  H01L33/52 ,  H01L33/38 ,  H01L33/44

CPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L2224/16245

摘要： Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first conductivity-type semiconductor layer having an upper surface divided into first and second regions, an active layer and a second conductivity-type semiconductor layer sequentially disposed on the second region of the first conductivity-type semiconductor layer; a first contact electrode disposed on the first region of the first conductivity-type semiconductor layer; a second contact electrode disposed on the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first contact electrode and having at least a portion disposed on the second contact electrode; a second electrode pad electrically connected to the second contact electrode; and a multilayer reflective structure interposed between the first electrode pad and the second contact electrode and comprising a plurality of dielectric layers which have different refractive indices and are alternately stacked.

摘要翻译： 提供了一种半导体发光器件。 半导体发光器件可以包括：发光结构，包括具有被划分为第一和第二区域的上表面的第一导电型半导体层，顺序地设置在第二区域的第二区域上的有源层和第二导电类型半导体层 第一导电型半导体层; 设置在所述第一导电型半导体层的所述第一区域上的第一接触电极; 设置在所述第二导电型半导体层上的第二接触电极; 第一电极焊盘，其电连接到所述第一接触电极并且具有设置在所述第二接触电极上的至少一部分; 电连接到第二接触电极的第二电极焊盘; 以及插入在第一电极焊盘和第二接触电极之间的多层反射结构，并且包括具有不同折射率并交替堆叠的多个电介质层。

公开(公告)号：US20120107987A1

公开(公告)日：2012-05-03

申请号：US13286834

申请日：2011-11-01

申请人： Won Goo HUR ,  Young Chul SHIN ,  Gi Bum KIM ,  Seung Woo CHOI

发明人： Won Goo HUR ,  Young Chul SHIN ,  Gi Bum KIM ,  Seung Woo CHOI

IPC分类号： H01L33/02

CPC分类号： H01L33/42 ,  H01L33/025 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射法在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。 在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明 电极具有显着改善的电特性。

公开(公告)号：US20120001152A1

公开(公告)日：2012-01-05

申请号：US13162254

申请日：2011-06-16

申请人： Ki Sung KIM ,  Gi Bum KIM ,  Tae Hun KIM ,  Young Chul SHIN ,  Young Sun KIM

发明人： Ki Sung KIM ,  Gi Bum KIM ,  Tae Hun KIM ,  Young Chul SHIN ,  Young Sun KIM

IPC分类号： H01L33/06 ,  H01L33/22

CPC分类号： H01L33/22 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0025 ,  H01L2933/0091

摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.

摘要翻译： 公开了一种半导体发光二极管（LED）及其制造方法。 制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。