公开(公告)号：US20110263061A1

公开(公告)日：2011-10-27

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L31/18

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20100006878A1

公开(公告)日：2010-01-14

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US08372669B2

公开(公告)日：2013-02-12

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US07999272B2

公开(公告)日：2011-08-16

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L29/22 ,  H01L33/00 ,  H01L29/24 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20090001398A1

公开(公告)日：2009-01-01

申请号：US12155877

申请日：2008-06-11

申请人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

发明人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/16 ,  H01L33/22

摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

摘要翻译： 提供了可以通过简单的工艺制造并且具有优异的光提取效率的半导体发光器件和制造具有高再现性和高生产量的半导体发光器件的方法。 根据本发明的一个方面，具有基板和叠层体的半导体发光器件依次层叠在基板上，其中第一导电型半导体层，有源层和第二导电类型半导体层包括二氧化硅颗粒层; 以及形成在二氧化硅粒子层的下部的不平坦部。

公开(公告)号：US08426880B2

公开(公告)日：2013-04-23

申请号：US12155877

申请日：2008-06-11

申请人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

发明人： Ho Young Song ,  Dong Yu Kim ,  Jeong Woo Park ,  Yong Chun Kim ,  Hyung Ky Back

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/16 ,  H01L33/22

摘要： There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.

公开(公告)号：US07259447B2

公开(公告)日：2007-08-21

申请号：US11150288

申请日：2005-06-13

申请人： Moon Heon Kong ,  Yong Chun Kim ,  Jae Hoon Lee ,  Hyung Ky Back

发明人： Moon Heon Kong ,  Yong Chun Kim ,  Jae Hoon Lee ,  Hyung Ky Back

IPC分类号： H01L23/495

CPC分类号： H01L33/38 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： Disclosed herein is a flip-chip type nitride semiconductor light emitting diode. The light emitting diode comprises an n-type nitride semiconductor layer formed on a transparent substrate and having a substantially rectangular upper surface, an n-side electrode which comprises at least one bonding pad adjacent to at least one corner of the upper surface of the n-type nitride semiconductor layer, extended electrodes formed in a band from the bonding pad along four sides of the upper surface of the n-type nitride semiconductor layer and one or more fingers extended in a diagonal direction of the upper surface from the bonding pad and/or the extended electrodes, an active layer and a p-type nitride semiconductor layer sequentially stacked on a region of the n-type nitride semiconductor layer where the n-side electrode is not formed, and a highly reflective ohmic contact layer formed on the p-type nitride semiconductor layer.

摘要翻译： 本文公开了倒装芯片型氮化物半导体发光二极管。 发光二极管包括形成在透明基板上并具有基本上矩形的上表面的n型氮化物半导体层，n侧电极包括与n的上表面的至少一个角相邻的至少一个焊盘 型氮化物半导体层，从接合焊盘沿着n型氮化物半导体层的上表面的四边形成的带状的延伸电极和从接合焊盘沿上表面的对角线方向延伸的一个或多个指状物， 或者在n型氮化物半导体层的未形成n侧电极的区域上依次堆叠的延伸电极，有源层和p型氮化物半导体层以及形成在该n型氮化物半导体层上的高反射欧姆接触层 p型氮化物半导体层。

公开(公告)号：US08664019B2

公开(公告)日：2014-03-04

申请号：US12271464

申请日：2008-11-14

申请人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

发明人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/32

摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

摘要翻译： 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

公开(公告)号：US20090075412A1

公开(公告)日：2009-03-19

申请号：US12271464

申请日：2008-11-14

申请人： Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

发明人： Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/32

摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

摘要翻译： 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

公开(公告)号：US07485482B2

公开(公告)日：2009-02-03

申请号：US11401329

申请日：2006-04-11

申请人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

发明人： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/405 ,  H01L2933/0083

摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

摘要翻译： 本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。 该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。 然后，选择性地蚀刻绝缘层以形成绝缘图案，并且在绝缘层上依次形成n掺杂的Al x Ga y In 1（1-xy）N层，有源层和p掺杂的AlmGanIn（1-m）N层 模式。 在p掺杂的AlmGanIn（1-m-n）N层上形成导电性基板。 去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂Al x Ga y In（1-x-y）N层的暴露表面的一部分上形成n电极。