公开(公告)号：US20110263061A1

公开(公告)日：2011-10-27

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L31/18

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20100006878A1

公开(公告)日：2010-01-14

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US08372669B2

公开(公告)日：2013-02-12

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US07999272B2

公开(公告)日：2011-08-16

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L29/22 ,  H01L33/00 ,  H01L29/24 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20080293177A1

公开(公告)日：2008-11-27

申请号：US11889392

申请日：2007-08-13

申请人： Sun Woon Kim ,  Seong Ju Park ,  Ja Yeon Kim ,  Min Ki Kwon ,  Dong Ju Lee ,  Jae Ho Han

发明人： Sun Woon Kim ,  Seong Ju Park ,  Ja Yeon Kim ,  Min Ki Kwon ,  Dong Ju Lee ,  Jae Ho Han

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

摘要翻译： 本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。 在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

公开(公告)号：US07575944B2

公开(公告)日：2009-08-18

申请号：US11889392

申请日：2007-08-13

申请人： Sun Woon Kim ,  Seong Ju Park ,  Ja Yeon Kim ,  Min Ki Kwon ,  Dong Ju Lee ,  Jae Ho Han

发明人： Sun Woon Kim ,  Seong Ju Park ,  Ja Yeon Kim ,  Min Ki Kwon ,  Dong Ju Lee ,  Jae Ho Han

IPC分类号： H01L21/4763

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

摘要翻译： 本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。 在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

公开(公告)号：US07868344B2

公开(公告)日：2011-01-11

申请号：US11517343

申请日：2006-09-08

申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

公开(公告)号：US20140191194A1

公开(公告)日：2014-07-10

申请号：US14237513

申请日：2011-08-09

申请人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

发明人： Seok Min Hwang ,  Jae Ho Han ,  Jae Yoon Kim ,  Hae Soo Ha ,  Su Yeol Lee ,  Je Won Kim

IPC分类号： H01L33/24 ,  H01L33/06

CPC分类号： H01L33/20 ,  H01L33/14

摘要： There is provided a nitride semiconductor light emitting device, capable of improving light extraction efficiency through a texture effect and including: a light emitting structure formed on a substrate and including a first conductivity-type nitride semiconductor layer and a second conductivity-type nitride semiconductor layer with an active layer interposed therebetween; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; a second electrode electrically connected to the second conductivity-type nitride semiconductor layer; and a light extraction pattern disposed between the first electrode and the second electrode and including a plurality of through holes formed by vertically penetrating the light emitting structure.

摘要翻译： 提供一种氮化物半导体发光器件，其能够通过纹理效果提高光提取效率，并且包括：发光结构，形成在基板上，并且包括第一导电型氮化物半导体层和第二导电型氮化物半导体层 其间插入有源层; 电连接到第一导电型氮化物半导体层的第一电极; 电连接到第二导电型氮化物半导体层的第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括通过垂直穿透所述发光结构而形成的多个通孔的光提取图案。

公开(公告)号：US20100308366A1

公开(公告)日：2010-12-09

申请号：US11517343

申请日：2006-09-08

申请人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

发明人： Pil Geun Kang ,  Bong Il Yi ,  Jae Ho Han ,  Dong Min Jeon

IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/36

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L2933/0016

摘要： A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.

摘要翻译： 氮化物半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的p型电极; 以及形成在不形成有源层的n型氮化物半导体层上的n电极。 p电极和n电极形成为具有依次层叠欧姆接触层，含有铝或银的化合物层和降解防止层的多层结构。

公开(公告)号：US20140183589A1

公开(公告)日：2014-07-03

申请号：US14237515

申请日：2011-08-09

申请人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

发明人： Jae Ho Han ,  Sung Tae Kim ,  Seung Wan Chae ,  Jong Ho Lee ,  Je Won Kim

IPC分类号： H01L33/00 ,  H01L33/60

CPC分类号： H01L33/005 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L33/0095 ,  H01L33/46 ,  H01L33/60

摘要： There are provided a method of manufacturing a semiconductor light emitting device and a semiconductor light emitting device manufactured thereby. According to an exemplary embodiment, a method of manufacturing a semiconductor light emitting device includes: forming a light emitting structure by sequentially growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a first main surface of a substrate, the substrate having first and second main surfaces opposing one another; forming a reflective film on the second main surface of the substrate, the reflective film including at least one laser absorption region; and performing a scribing process separating the light emitting structure and the substrate into device units by irradiating a laser from a portion of a top of the light emitting structure corresponding to the laser absorption region to the light emitting structure and the substrate.

摘要翻译： 提供一种制造半导体发光器件和由此制造的半导体发光器件的方法。 根据示例性实施例，制造半导体发光器件的方法包括：通过在衬底的第一主表面上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层来形成发光结构 所述基板具有彼此相对的第一和第二主表面; 在所述基板的所述第二主表面上形成反射膜，所述反射膜包括至少一个激光吸收区域; 以及通过从对应于所述激光吸收区域的所述发光结构的顶部的一部分照射激光而将所述发光结构和所述衬底分离成器件单元的划线处理到所述发光结构和所述衬底。