公开(公告)号：US07692201B2

公开(公告)日：2010-04-06

申请号：US11098802

申请日：2005-04-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US08071994B2

公开(公告)日：2011-12-06

申请号：US12624106

申请日：2009-11-23

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US08455906B2

公开(公告)日：2013-06-04

申请号：US13286881

申请日：2011-11-01

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L31/0232 ,  H01L31/0236

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US07173288B2

公开(公告)日：2007-02-06

申请号：US11053906

申请日：2005-02-10

申请人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

发明人： Kyu Han Lee ,  Hyun Kyung Kim ,  Je Won Kim ,  Dong Joon Kim

IPC分类号： H01L29/22

CPC分类号： H01L27/15 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A nitride semiconductor light emitting device including a light emitting diode and a diode formed on a single substrate, in which the light emitting diode and the diode use a common electrode. According to the present invention, an active layer and a p-type nitride semiconductor layer are each divided into a first region and a second region by an insulative isolation layer, and an ohmic contact layer is formed on the p-type nitride semiconductor layer contained in the first region. A p-type electrode is formed on the ohmic contact layer and is extended to the p-type nitride semiconductor layer contained in the second region. An n-type electrode is formed on the p-type nitride semiconductor layer contained in the second region, passes through the p-type nitride semiconductor layer and the active layer contained in the second region, and is connected to the first n-type nitride semiconductor layer.

摘要翻译： 一种氮化物半导体发光器件，包括在单个衬底上形成的发光二极管和二极管，其中发光二极管和二极管使用公共电极。 根据本发明，通过绝缘隔离层将有源层和p型氮化物半导体层分别分成第一区域和第二区域，在包含的p型氮化物半导体层上形成欧姆接触层 在第一个地区。 在欧姆接触层上形成p型电极，并延伸到包含在第二区域中的p型氮化物半导体层。 在包含在第二区域的p型氮化物半导体层上形成n型电极，穿过p型氮化物半导体层和包含在第二区域中的有源层，并连接到第一n型氮化物 半导体层。

公开(公告)号：US08372669B2

公开(公告)日：2013-02-12

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US07999272B2

公开(公告)日：2011-08-16

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L29/22 ,  H01L33/00 ,  H01L29/24 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20110263061A1

公开(公告)日：2011-10-27

申请号：US13176712

申请日：2011-07-05

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L31/18

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US20100006878A1

公开(公告)日：2010-01-14

申请号：US12273512

申请日：2008-11-18

申请人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

发明人： Sun Woon KIM ,  Hyun Kyung Kim ,  Hyung Ky Back ,  Jae Ho Han

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/22 ,  H01L33/12 ,  H01L2933/0083

摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.

摘要翻译： 提供了具有图案化衬底的半导体发光器件及其制造方法。 半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中， 图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

公开(公告)号：US08258539B2

公开(公告)日：2012-09-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US20100276725A1

公开(公告)日：2010-11-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。