公开(公告)号：US08455906B2

公开(公告)日：2013-06-04

申请号：US13286881

申请日：2011-11-01

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L31/0232 ,  H01L31/0236

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US07692201B2

公开(公告)日：2010-04-06

申请号：US11098802

申请日：2005-04-05

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US08071994B2

公开(公告)日：2011-12-06

申请号：US12624106

申请日：2009-11-23

申请人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

发明人： Sun Woon Kim ,  Hyun Kyung Kim ,  Je Won Kim ,  In Seok Choi ,  Kyu Han Lee ,  Jeong Tak Oh

IPC分类号： H01L33/00

CPC分类号： H01L33/22

摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

摘要翻译： 本发明提供一种半导体发光装置。 发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。 在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。 侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

公开(公告)号：US08415708B2

公开(公告)日：2013-04-09

申请号：US12911320

申请日：2010-10-25

申请人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

发明人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

公开(公告)号：US07893443B2

公开(公告)日：2011-02-22

申请号：US11380415

申请日：2006-04-26

申请人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

发明人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

公开(公告)号：US20110037086A1

公开(公告)日：2011-02-17

申请号：US12911320

申请日：2010-10-25

申请人： Je Won KIM ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

发明人： Je Won KIM ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Jin Sub Park ,  Kyu Han Lee

IPC分类号： H01L33/30

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/32

摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0

摘要翻译： 本文公开了一种氮化物基半导体发光器件。 氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

公开(公告)号：US07084420B2

公开(公告)日：2006-08-01

申请号：US11098278

申请日：2005-04-04

申请人： Sun Woon Kim ,  Dong Hyun Cho ,  Je Won Kim ,  Kyu Han Lee ,  Jeong Tak Oh ,  Dong Joon Kim

发明人： Sun Woon Kim ,  Dong Hyun Cho ,  Je Won Kim ,  Kyu Han Lee ,  Jeong Tak Oh ,  Dong Joon Kim

IPC分类号： H01L29/06 ,  H01L31/072

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/0213 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/12

摘要： The present invention provides a nitride based semiconductor device comprising an active layer having a quantum well layer and a quantum barrier layer, wherein the device includes an electron emitting layer formed of at least two repeats of a first nitride semiconductor layer and a second nitride semiconductor layer having different compositions between a n-type nitride semiconductor layer and the active layer, the first nitride semiconductor layer has an energy band gap greater than that of the quantum well layer, smaller than that of the quantum barrier layer, and decreasing closer to the active layer, and the second nitride semiconductor layer has an energy band gap at least higher than that of the adjacent first nitride semiconductor layer(s) and has a thickness capable of tunneling electrons.

公开(公告)号：US07135716B2

公开(公告)日：2006-11-14

申请号：US10911562

申请日：2004-08-05

申请人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Soo Min Lee

发明人： Je Won Kim ,  Jeong Tak Oh ,  Dong Joon Kim ,  Sun Woon Kim ,  Soo Min Lee

IPC分类号： H01L29/22

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/32

摘要： A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.

摘要翻译： 氮化镓系半导体发光元件包括具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。

公开(公告)号：US06844569B1

公开(公告)日：2005-01-18

申请号：US10831190

申请日：2004-04-26

申请人： Kyu Han Lee ,  Sun Woon Kim ,  Je Won Kim

发明人： Kyu Han Lee ,  Sun Woon Kim ,  Je Won Kim

IPC分类号： H01L21/3065 ,  C30B29/60 ,  H01L21/20 ,  H01L21/205 ,  H01L33/22 ,  H01L33/32 ,  H01L33/00

CPC分类号： H01L33/007 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/22

摘要： The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.

摘要翻译： 本发明涉及一种氮化物系半导体的制造方法及其制造的氮化物系半导体。 在本发明的制造方法中，在蓝宝石基板上形成自组织金属层。 具有自组织金属层的蓝宝石衬底被加热，使得自组织金属聚结成纳米级簇以不规则地暴露蓝宝石衬底的上表面。 使用自组织金属簇作为掩模对蓝宝石衬底的暴露部分进行等离子体蚀刻，以在蓝宝石衬底上形成纳米尺度的不均匀结构。 将所得结构湿式蚀刻以除去自组织的金属簇。 形成在蓝宝石衬底上的纳米尺度不均匀结构减小了蓝宝石衬底和氮化物基半导体层之间的应力和结果的位错，并且增加了其之间的量子效率。

公开(公告)号：US07018912B2

公开(公告)日：2006-03-28

申请号：US10806432

申请日：2004-03-23

申请人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

发明人： Sun Woon Kim ,  In Eung Kim ,  Hun Joo Hahm ,  Soo Min Lee ,  Dong Joon Kim ,  Je Won Kim

IPC分类号： H01L21/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  Y10S438/967

摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

摘要翻译： 公开了一种在MOCVD反应器中制造氮化物半导体的方法。 首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。 将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。 将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。 在氮化蓝宝石衬底上生长氮化物半导体层。 通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。 在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。