摘要:
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
摘要:
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
摘要:
Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.
摘要:
In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.
摘要:
An apparatus and method are disclosed for providing location-based advertisement information in a BWA communication system, in which a shop terminal provides advertisement information to a service provider server. The service provider server uses the advertisement information as accounting information and provides path guidance information to a user terminal. A Radio Access Station (“RAS”) broadcasts or selectively sends the advertisement information to the user terminal and sends path guidance approval information received from the user terminal to the service provider server. The user terminal receives the advertisement information from the RAS, sends the path guidance approval information according to user selection, receives the path guidance information from the service provider server, and invokes a path guidance function.
摘要:
An apparatus and method for providing EPG in a digital broadcasting system, in which an EPG connecting unit connects EPG servers of digital broadcasting channels, a program information generating unit generates program information according to program characteristics of the digital broadcasting channels, and an EPG server generates EPG information using the generated program information, and combines the generated EPG information with EPG information of the broadcasting channels. Accordingly, the program information of different broadcasting channels can be searched without switching channels, and quality of the EPG service can be improved. Moreover, users can be allowed to personally configure the EPG, thereby providing the EPG according to characteristics of the users.
摘要:
Provided is a method of fabricating a semiconductor wafer. The method includes preparing a substrate wafer having a non-single-crystalline thin layer; disposing at least one single crystalline pattern adjacent to the non-single-crystalline thin layer on the substrate wafer; and forming a material layer contacting the single crystalline pattern on the non-single-crystalline thin layer.
摘要:
A sensor network communication system interworking with a BWA communication system and a communication method therefor are provided. In a method for measuring a predetermined target in the sensor network communication system interworking with the BWA communication system, a mobile station or a server sends a measurement request for the predetermined target to a local controller over the BWA communication system. The local controller sends the measurement request to a predetermined sensor and actuator over a wireless communication protocol. The sensor and actuator measures the predetermined target and sends the measurement value to the local controller. The local controller sends a measurement result message based on the measurement value to the mobile station or the server.
摘要:
An apparatus and method for providing subscriber information in a mobile communication system are provided. A database stores registered information containing subscriber information, a scope of persons to view the subscriber information, and an open level for the subscriber information. A wait time information management server stores the subscriber information in the database. Upon request for a call from a calling terminal, the wait time information management server searches for the subscriber information in the database and provides the searched subscriber information according to the open level to an MSC. The MSC sends wait time information based on the subscriber information received from the wait time information management server to the calling terminal.
摘要:
Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.