Wafer, fabricating method of the same, and semiconductor substrate
    1.
    发明授权
    Wafer, fabricating method of the same, and semiconductor substrate 失效
    晶片,其制造方法和半导体衬底

    公开(公告)号:US08497570B2

    公开(公告)日:2013-07-30

    申请号:US13178919

    申请日:2011-07-08

    IPC分类号: H01L29/36

    摘要: A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.

    摘要翻译: 提供晶片,其制造方法和半导体衬底。 晶片包括形成在第一表面的第一基底层,形成在与第一表面相反的第二表面的第二基底层,第二基底层具有比第一基底层更大的氧浓度,以及形成氧扩散保护层 在第一基板层和第二基板层之间,氧扩散保护层位于比第二表面更靠近第一表面的位置。

    Wafer, Fabricating Method Of The Same, And Semiconductor Substrate
    2.
    发明申请
    Wafer, Fabricating Method Of The Same, And Semiconductor Substrate 失效
    晶圆,其制造方法及半导体基板

    公开(公告)号:US20120056304A1

    公开(公告)日:2012-03-08

    申请号:US13178919

    申请日:2011-07-08

    IPC分类号: H01L29/02

    摘要: A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.

    摘要翻译: 提供晶片,其制造方法和半导体衬底。 晶片包括形成在第一表面的第一基底层,形成在与第一表面相反的第二表面的第二基底层,第二基底层具有比第一基底层更大的氧浓度,以及形成氧扩散保护层 在第一基板层和第二基板层之间,氧扩散保护层位于比第二表面更靠近第一表面的位置。

    Semiconductor device and method for forming the same
    3.
    发明授权
    Semiconductor device and method for forming the same 有权
    半导体装置及其形成方法

    公开(公告)号:US07573123B2

    公开(公告)日:2009-08-11

    申请号:US11775130

    申请日:2007-07-09

    IPC分类号: H01L29/04 H01L31/036

    摘要: Provided are a semiconductor device, and a method of forming the same. In one embodiment, the semiconductor device includes a semiconductor layer, first and second semiconductor fins, an insulating layer, and an inter-fin connection member. The first and second semiconductor fins are placed on the semiconductor layer, and have different crystal directions. The first semiconductor fin is connected to the semiconductor layer, and has the equivalent crystal direction as that of the semiconductor layer. The insulating layer is interposed between the second semiconductor fin and the semiconductor layer, and has an opening in which the first semiconductor fin is inserted. The inter-fin connection member connects the first semiconductor fin and the second semiconductor fin together on the insulating layer.

    摘要翻译: 提供半导体器件及其形成方法。 在一个实施例中,半导体器件包括半导体层,第一和第二半导体鳍片,绝缘层和鳍间连接构件。 第一和第二半导体散热片放置在半导体层上,具有不同的晶体方向。 第一半导体鳍状物与半导体层连接,具有与半导体层相同的晶体方向。 绝缘层介于第二半导体鳍片和半导体层之间,并且具有插入第一半导体鳍片的开口。 翅片间连接构件将第一半导体翅片和第二半导体翅片在绝缘层上连接起来。

    Method of fabricating semiconductor memory device and semiconductor memory device fabricated by the method
    4.
    发明申请
    Method of fabricating semiconductor memory device and semiconductor memory device fabricated by the method 审中-公开
    通过该方法制造半导体存储器件和半导体存储器件的方法

    公开(公告)号:US20080246077A1

    公开(公告)日:2008-10-09

    申请号:US12012592

    申请日:2008-02-04

    IPC分类号: H01L27/108 H01L21/425

    摘要: In a method for fabricating a semiconductor memory device and a semiconductor memory device fabricated by the method, the method includes forming a multi-layered dielectric structure including a first dielectric layer with an ion implantation layer and a second dielectric layer without an ion implantation layer, over a semiconductor substrate; forming nanocrystals in the first and second dielectric layers by diffusing ions of the ion implantation layer by thermally treating the multi-layered dielectric structure; and forming a gate electrode on the multi-layered dielectric structure.

    摘要翻译: 在通过该方法制造半导体存储器件和半导体存储器件的方法中,该方法包括形成包括具有离子注入层的第一介电层和没有离子注入层的第二电介质层的多层电介质结构, 在半导体衬底上; 通过热处理多层电介质结构,通过离子注入层的离子扩散来在第一和第二电介质层中形成纳米晶体; 以及在所述多层电介质结构上形成栅电极。

    Apparatus and method for providing location-based advertisement information in a broadband wireless access communication system
    5.
    发明申请
    Apparatus and method for providing location-based advertisement information in a broadband wireless access communication system 审中-公开
    一种用于在宽带无线接入通信系统中提供基于位置的广告信息的装置和方法

    公开(公告)号:US20070150557A1

    公开(公告)日:2007-06-28

    申请号:US11643168

    申请日:2006-12-21

    IPC分类号: G06F15/16

    CPC分类号: G06Q30/02

    摘要: An apparatus and method are disclosed for providing location-based advertisement information in a BWA communication system, in which a shop terminal provides advertisement information to a service provider server. The service provider server uses the advertisement information as accounting information and provides path guidance information to a user terminal. A Radio Access Station (“RAS”) broadcasts or selectively sends the advertisement information to the user terminal and sends path guidance approval information received from the user terminal to the service provider server. The user terminal receives the advertisement information from the RAS, sends the path guidance approval information according to user selection, receives the path guidance information from the service provider server, and invokes a path guidance function.

    摘要翻译: 公开了一种用于在BWA通信系统中提供基于位置的广告信息的装置和方法,其中商店终端向服务提供商服务器提供广告信息。 服务提供商服务器使用广告信息作为会计信息,并向用户终端提供路径引导信息。 无线电接入站(“RAS”)广播或选择性地向用户终端发送广告信息,并将从用户终端接收的路径指导批准信息发送到服务提供商服务器。 用户终端从RAS接收广告信息,根据用户选择发送路径引导批准信息,从服务提供者服务器接收路径引导信息,并调用路径引导功能。

    Sensor network communication system interworking with broadband wireless access communication system and communication method therefor
    8.
    发明申请
    Sensor network communication system interworking with broadband wireless access communication system and communication method therefor 审中-公开
    传感器网络通信系统与宽带无线接入通信系统的互通及其通信方法

    公开(公告)号:US20070030168A1

    公开(公告)日:2007-02-08

    申请号:US11498661

    申请日:2006-08-03

    IPC分类号: H04Q9/00

    CPC分类号: H04Q9/00

    摘要: A sensor network communication system interworking with a BWA communication system and a communication method therefor are provided. In a method for measuring a predetermined target in the sensor network communication system interworking with the BWA communication system, a mobile station or a server sends a measurement request for the predetermined target to a local controller over the BWA communication system. The local controller sends the measurement request to a predetermined sensor and actuator over a wireless communication protocol. The sensor and actuator measures the predetermined target and sends the measurement value to the local controller. The local controller sends a measurement result message based on the measurement value to the mobile station or the server.

    摘要翻译: 提供了与BWA通信系统相互配合的传感器网络通信系统及其通信方法。 在与BWA通信系统相互配合的传感器网络通信系统中测量预定目标的方法中,移动站或服务器通过BWA通信系统向本地控制器发送预定目标的测量请求。 本地控制器通过无线通信协议将测量请求发送到预定的传感器和致动器。 传感器和执行器测量预定目标,并将测量值发送到本地控制器。 本地控制器根据测量值向移动台或服务器发送测量结果消息。