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    Stack package
    1.
    发明授权
    Stack package 有权
    堆栈包

    公开(公告)号：US08097940B2

    公开(公告)日：2012-01-17

    申请号：US12588382

    申请日：2009-10-14

    申请人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    发明人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    IPC分类号： H01L23/02

    CPC分类号： H01L25/0657 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stack package may include a substrate having first and second faces opposite each other and an opening formed therein. The first semiconductor chip may be mounted on the first face of the substrate and include a through electrode in the middle region of the first semiconductor chip that is exposed through the opening. The second semiconductor chip may be stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by the through electrode of the first semiconductor chip. The circuit pattern may be formed on the second face of the substrate and include a bonding pad arranged adjacent to the opening and electrically connected to the through electrode of the first semiconductor chip through the opening, an outer connection pad spaced apart from the bonding pad and a connection wiring extending from the opening to the outer connection pad via the bonding pad.

    摘要翻译： 堆叠包装可以包括具有彼此相对的第一和第二面以及其中形成的开口的衬底。 第一半导体芯片可以安装在基板的第一面上，并且在通过开口暴露的第一半导体芯片的中间区域中包括通孔。 第二半导体芯片可以堆叠在第一半导体芯片上并且通过第一半导体芯片的通孔电连接到第一半导体芯片。 电路图案可以形成在基板的第二面上，并且包括邻近开口布置的焊盘，并且通过开口与第一半导体芯片的通孔电连接，与焊盘间隔开的外连接焊盘和 连接配线，从连接焊盘的开口延伸到外部连接焊盘。

    Stack package
    2.
    发明申请
    Stack package 有权
    堆栈包

    公开(公告)号：US20100090326A1

    公开(公告)日：2010-04-15

    申请号：US12588382

    申请日：2009-10-14

    申请人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    发明人： Seung-Duk Baek ,  Sun-Won Kang ,  Jong-Joo Lee

    IPC分类号： H01L25/065

    CPC分类号： H01L25/0657 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/06136 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/73215 ,  H01L2224/73257 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stack package may include a substrate having first and second faces opposite each other and an opening formed therein. The first semiconductor chip may be mounted on the first face of the substrate and include a through electrode in the middle region of the first semiconductor chip that is exposed through the opening. The second semiconductor chip may be stacked on the first semiconductor chip and electrically connected to the first semiconductor chip by the through electrode of the first semiconductor chip. The circuit pattern may be formed on the second face of the substrate and include a bonding pad arranged adjacent to the opening and electrically connected to the through electrode of the first semiconductor chip through the opening, an outer connection pad spaced apart from the bonding pad and a connection wiring extending from the opening to the outer connection pad via the bonding pad.

    摘要翻译： 堆叠包装可以包括具有彼此相对的第一和第二面以及其中形成的开口的衬底。 第一半导体芯片可以安装在基板的第一面上，并且在通过开口暴露的第一半导体芯片的中间区域中包括通孔。 第二半导体芯片可以堆叠在第一半导体芯片上并且通过第一半导体芯片的通孔电连接到第一半导体芯片。 电路图案可以形成在基板的第二面上，并且包括邻近开口布置的焊盘，并且通过开口电连接到第一半导体芯片的通孔，与焊盘间隔开的外连接焊盘和 连接配线，从连接焊盘的开口延伸到外部连接焊盘。

    Chip stack package
    3.
    发明授权
    Chip stack package 有权
    芯片堆栈封装

    公开(公告)号：US08446016B2

    公开(公告)日：2013-05-21

    申请号：US13224670

    申请日：2011-09-02

    申请人： Sun-Won Kang ,  Seung-Duk Baek ,  Jong-Joo Lee

    发明人： Sun-Won Kang ,  Seung-Duk Baek ,  Jong-Joo Lee

    IPC分类号： H01L23/538

    CPC分类号： H01L25/0657 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15311

    摘要： A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via electrode, or a signal transfer through via electrode. The power supply through via electrode and the ground through via electrode are formed of a first material such as copper, and the signal transfer through via electrode is formed of second material such as polycrystalline silicon doped with impurities. The signal transfer through via electrode may have a diametrically smaller cross section than that of each of the power supply through via electrode and the ground through via electrode regardless of their resistivities.

    摘要翻译： 芯片堆叠包括通过使用粘合剂层作为中间介质堆叠的多个芯片，以及通过芯片形成的通孔电极以电耦合芯片。 通孔电极通过通孔电极，通过通孔电极的接地或通过通孔电极的信号传输分类为电源。 通过通孔电极和通过通孔电极的接地的电源由诸如铜的第一材料形成，并且通过通孔电极的信号传输由掺杂杂质的多晶硅等第二材料形成。 通过通孔电极的信号传输可以具有比通过通孔电极和通过通孔电极的接地的每个电源的直径更小的横截面，而不管其电阻率如何。

    Chip stack package
    5.
    发明授权
    Chip stack package 有权
    芯片堆栈封装

    公开(公告)号：US08039928B2

    公开(公告)日：2011-10-18

    申请号：US12171035

    申请日：2008-07-10

    申请人： Sun-Won Kang ,  Seung-Duk Baek ,  Jong-Joo Lee

    发明人： Sun-Won Kang ,  Seung-Duk Baek ,  Jong-Joo Lee

    IPC分类号： H01L23/538

    CPC分类号： H01L25/0657 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15311

    摘要： A chip stack package includes a plurality of chips that are stacked by using adhesive layers as intermediary media, and a through via electrode formed through the chips to electrically couple the chips. The through via electrode is classified as a power supply through via electrode, a ground through via electrode, or a signal transfer through via electrode. The power supply through via electrode and the ground through via electrode are formed of a first material such as copper, and the signal transfer through via electrode is formed of second material such as polycrystalline silicon doped with impurities. The signal transfer through via electrode may have a diametrically smaller cross section than that of each of the power supply through via electrode and the ground through via electrode regardless of their resistivities.

    摘要翻译： 芯片堆叠包括通过使用粘合剂层作为中间介质堆叠的多个芯片，以及通过芯片形成的通孔电极以电耦合芯片。 通孔电极通过通孔电极，通过通孔电极的接地或通过通孔电极的信号传输分类为电源。 通过通孔电极和通过通孔电极的接地的电源由诸如铜的第一材料形成，并且通过通孔电极的信号传输由掺杂杂质的多晶硅等第二材料形成。 通过通孔电极的信号传输可以具有比通过通孔电极和通过通孔电极的接地的每个电源的直径更小的横截面，而不管其电阻率如何。

    Decoupling capacitor, wafer stack package including the decoupling capacitor, and method of fabricating the wafer stack package
    10.
    发明授权
    Decoupling capacitor, wafer stack package including the decoupling capacitor, and method of fabricating the wafer stack package 有权
    去耦电容器，包括去耦电容器的晶片堆叠封装以及制造晶片堆叠封装的方法

    公开(公告)号：US07884458B2

    公开(公告)日：2011-02-08

    申请号：US11935953

    申请日：2007-11-06

    申请人： Sun-Won Kang ,  Seung-Duk Baek

    发明人： Sun-Won Kang ,  Seung-Duk Baek

    IPC分类号： H01L23/02

    CPC分类号： H01G4/06 ,  H01G4/1227 ,  H01G4/308 ,  H01L23/50 ,  H01L25/0657 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/00

    摘要： A decoupling capacitor, a wafer stack package including the decoupling capacitor, and a method of fabricating the wafer stack package are provided. The decoupling capacitor may include a first electrode formed on an upper surface of a first wafer, a second electrode formed on a lower surface of a second wafer, and an adhesive material having a high dielectric constant and combining the first wafer with the second wafer. In the decoupling capacitor the first and second electrodes operate as two electrodes of the decoupling capacitor, and the adhesive material operates as a dielectric of the decoupling capacitor.

    摘要翻译： 提供去耦电容器，包括去耦电容器的晶片堆叠封装以及制造晶片堆叠封装的方法。 去耦电容器可以包括形成在第一晶片的上表面上的第一电极，形成在第二晶片的下表面上的第二电极和具有高介电常数并且将第一晶片与第二晶片组合的粘合材料。 在去耦电容器中，第一和第二电极作为去耦电容器的两个电极工作，并且粘合材料作为去耦电容器的电介质。