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    Non-volatile memory device and fabricating method thereof
    4.
    发明申请
    Non-volatile memory device and fabricating method thereof 失效

    公开(公告)号：US20070131996A1

    公开(公告)日：2007-06-14

    申请号：US11701484

    申请日：2007-02-02

    申请人： Sung Jung ,  Jum Kim

    发明人： Sung Jung ,  Jum Kim

    IPC分类号： H01L29/94 ,  H01L27/108 ,  H01L29/76 ,  H01L31/119

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/792

    摘要： The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device fabrication is facilitated. The present invention includes at least two trench isolation layers arranged in a device isolation area of a semiconductor substrate, each having a first depth, a first conductive type well arranged between the at least two trench isolation layers to have a second depth smaller than the first depth, a second conductive type source region and a second conductive type drain region arranged in a prescribed upper part of the first conductive type well to be separated from each other by a channel region in-between, an ONO layer on the channel region of the semiconductor substrate, the ONO layer comprising a lower oxide layer, a nitride layer, and an upper oxide layer, and a wordline conductor layer on the ONO layer.

    Iridium-based luminescent compounds having phenylpyridine moieties with organosilicon group, and organic electroluminescence devices using the compounds as color-producing materials
    5.
    发明申请
    Iridium-based luminescent compounds having phenylpyridine moieties with organosilicon group, and organic electroluminescence devices using the compounds as color-producing materials 有权
    具有苯基吡啶部分的具有有机硅基团的铱基发光化合物和使用该化合物作为生色材料的有机电致发光器件

    公开(公告)号：US20060228581A1

    公开(公告)日：2006-10-12

    申请号：US11240633

    申请日：2005-10-03

    申请人： Jeong Seo ,  Chun Park ,  Soon Kwon ,  Yun Kim ,  Sung Jung ,  Jun Ahn ,  Hyung Kim

    发明人： Jeong Seo ,  Chun Park ,  Soon Kwon ,  Yun Kim ,  Sung Jung ,  Jun Ahn ,  Hyung Kim

    IPC分类号： H01L51/54 ,  H05B33/14 ,  C09K11/06

    CPC分类号： C07F15/0033 ,  C09K11/06 ,  C09K2211/1029 ,  C09K2211/185 ,  H01L51/0085 ,  H01L51/0094 ,  H01L51/5012 ,  H05B33/14 ,  Y10S428/917

    摘要： Disclosed are iridium-based luminescent compounds having phenylpyridine moieties with an organosilicon group, and organic electroluminescence devices using the compounds as color-producing materials. The luminescent compounds have the structure of Formula 1 below: wherein L1, L2, L3, R1, R2 and R3, which may be identical to or different from each other, are each independently selected from the group consisting of aryl, alkoxy, alkyl, and groups of Formulae 2 and 3 below: wherein D1, D2 and D3 are each independently selected from the group consisting of C1˜18 alkyl, C1˜18 alkoxy, substituted or unsubstituted C1˜18 alkyl and allyl, and substituted or unsubstituted C6˜18 fluorinated alkyl and allyl groups; wherein D4, D5 and D6 are each independently selected from the group consisting of C1˜18 alkyl, C1˜18 alkoxy, substituted or unsubstituted C1˜18 alkyl and allyl, and substituted or unsubstituted C6˜18 fluorinated alkyl and allyl groups.

    摘要翻译： 公开了具有有机硅基团的苯基吡啶部分的铱系发光化合物和使用该化合物作为生色材料的有机电致发光器件。 发光化合物具有以下式1的结构：其中L 1，L 2，L 3，R 1，N 2， R 2，R 3和R 3可以彼此相同或不同，各自独立地选自芳基，烷氧基，烷基和基团 下式2和3的化合物：其中D 1，D 2和D 3各自独立地选自C 1 -C 6烷基， 1〜18个烷基，C 1〜18个烷氧基，取代或未取代的C 1-18烷基和烯丙基，以及取代或未取代的C 6〜 18 氟烷基和烯丙基; 其中D 4，D 5和D 6各自独立地选自C 1〜18， 烷基，C 1〜18烷氧基，取代或未取代的C 1-18烷基和烯丙基，以及取代或未取代的C 6-18烷氧基烷基 和烯丙基。

    Trench isolation method in flash memory device
    6.
    发明申请
    Trench isolation method in flash memory device 有权
    闪存设备中的沟槽隔离方法

    公开(公告)号：US20050142745A1

    公开(公告)日：2005-06-30

    申请号：US11019302

    申请日：2004-12-23

    申请人： Sung Jung ,  Jum Kim

    发明人： Sung Jung ,  Jum Kim

    IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/115 ,  H01L21/336

    CPC分类号： H01L27/11521 ,  H01L21/76224 ,  H01L27/115

    摘要： The present invention provides a trench isolation method in a flash memory device, by which stability and reliability of the device are enhanced in a manner of forming a pad oxide layer thick in the vicinity of an edge of a trench isolation layer. The present invention includes forming a mask layer pattern on a semiconductor substrate to expose a device isolation area but to cover an active area thereof, the mask layer pattern comprising a first insulating layer pattern and a second insulating layer pattern stacked thereon, forming a trench in the semiconductor substrate corresponding to the device isolation area, removing an exposed portion of the first insulating layer pattern enough to expose a portion of the semiconductor substrate in the active area adjacent to the trench, forming a sidewall oxide layer on an inside of the trench and the exposed portion of the semiconductor substrate, filling up the trench with a third insulating layer to cover the sidewall oxide layer, and removing the mask layer pattern.

    摘要翻译： 本发明提供了一种闪速存储器件中的沟槽隔离方法，通过这种方法，在沟槽隔离层的边缘附近形成厚的衬垫氧化物层，增强了器件的稳定性和可靠性。 本发明包括在半导体衬底上形成掩模层图案以暴露器件隔离区域而覆盖其有效区域，掩模层图案包括第一绝缘层图案和叠置在其上的第二绝缘层图案，形成沟槽 所述半导体衬底对应于所述器件隔离区域，去除所述第一绝缘层图案的暴露部分以足以暴露所述半导体衬底在与所述沟槽相邻的有源区域中的一部分，在所述沟槽的内部形成侧壁氧化物层，以及 半导体衬底的暴露部分，用第三绝缘层填充沟槽以覆盖侧壁氧化物层，以及去除掩模层图案。

    High voltage semiconductor device and fabricating method thereof
    7.
    发明申请
    High voltage semiconductor device and fabricating method thereof 审中-公开
    高压半导体器件及其制造方法

    公开(公告)号：US20050139916A1

    公开(公告)日：2005-06-30

    申请号：US11020276

    申请日：2004-12-27

    申请人： Jum Kim ,  Sung Jung

    发明人： Jum Kim ,  Sung Jung

    IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L29/41775

    摘要： A high voltage semiconductor device and fabricating method thereof, enable a high breakdown voltage to be provided from a surface area without forming a dual spacer layer. The semiconductor device includes a semiconductor substrate having source/drain regions separated from each other by a channel region in-between, a gate insulating layer pattern on the channel region, a gate conductor layer pattern on the gate insulating layer, a sidewall insulating layer provided on a sidewall of the gate conductor layer pattern, a salicide suppress layer pattern covering partial, but not entire, surfaces of the source/drain regions, and covering the sidewall insulating layer, and the gate conductor layer pattern, and a metal salicide layer on remaining portions surfaces of the source/drain regions that are not covered with the salicide suppress layer pattern.

    摘要翻译： 高压半导体器件及其制造方法能够从表面区域提供高的击穿电压而不形成双间隔层。 半导体器件包括具有源极/漏极区域的半导体衬底，沟道区域之间的沟道区域彼此分离，沟道区域上的栅极绝缘层图案，栅极绝缘层上的栅极导体层图案，提供的侧壁绝缘层 在栅极导体层图案的侧壁上，覆盖源极/漏极区域的部分但不是整个表面并且覆盖侧壁绝缘层和栅极导体层图案以及金属硅化物层的自对准硅化物抑制层图案 未被自对准硅化物抑制层图案覆盖的源/漏区的剩余部分表面。

    Embedded non-volatile memory and a method for fabricating the same
    8.
    发明申请
    Embedded non-volatile memory and a method for fabricating the same 审中-公开
    嵌入式非易失性存储器及其制造方法

    公开(公告)号：US20050087793A1

    公开(公告)日：2005-04-28

    申请号：US10969995

    申请日：2004-10-22

    申请人： Sung Jung ,  Dong Kim

    发明人： Sung Jung ,  Dong Kim

    IPC分类号： H01L21/336 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  H01L29/66833 ,  H01L29/792

    摘要： A low density and cost effective embedded non-volatile memory cell includes a semiconductor substrate of a first conductivity type and having device isolation regions and active regions defined therein; a first well of a second conductivity type in the semiconductor substrate; a plurality of second wells of the first conductivity type inside the first well, the second wells being formed in parallel with a bit line and surrounded by the device isolation regions and the first well; a plurality of ONO structures formed over corresponding ones of the second wells, each ONO structure including a first oxide film, a nitride film, and a second oxide film; and a plurality of gates formed on corresponding ones of the ONO structures and formed in parallel with a word line.

    摘要翻译： 低密度和成本有效的嵌入式非易失性存储单元包括第一导电类型的半导体衬底并且具有限定在其中的器件隔离区和有源区; 半导体衬底中的第二导电类型的第一阱; 第一阱中的第一导电类型的多个第二阱，第二阱与位线并联形成并被器件隔离区和第一阱围绕; 在对应的第二阱上形成的多个ONO结构，每个ONO结构包括第一氧化膜，氮化物膜和第二氧化物膜; 以及形成在对应的ONO结构上并与字线平行形成的多个门。