公开(公告)号：US20130133573A1

公开(公告)日：2013-05-30

申请号：US13467387

申请日：2012-05-09

申请人： Sung-Joong JOO ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Sung-Yong LEE ,  Cheol-Rae JO ,  In-Ae HAN

发明人： Sung-Joong JOO ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Sung-Yong LEE ,  Cheol-Rae JO ,  In-Ae HAN

IPC分类号： B05C21/00 ,  C23C16/02 ,  G03F7/20 ,  C23C16/44

CPC分类号： C23C16/4404 ,  B05C21/005 ,  C23C14/042 ,  C23C16/042 ,  G03F1/00 ,  H01F41/22 ,  H01L51/0011

摘要： A deposition mask includes a mask main body and a coating layer. The mask main body includes a plurality of slits penetrating the mask main body. The coating layer is coated on an entire surface of the mask main body. The coating layer is made of a material different from a material of the main body, and it has a magnetic force stronger than that of the main body. Each of the slits has an open area, and a thickness of the coating layer controls a width of the open area. A photolithography process is used to form the plurality of slits.

摘要翻译： 沉积掩模包括掩模主体和涂层。 面罩主体包括穿透面罩主体的多个狭缝。 涂层涂覆在面罩主体的整个表面上。 涂层由与主体材料不同的材料制成，具有比主体更强的磁力。 每个狭缝具有开放区域，并且涂层的厚度控制开放区域的宽度。 使用光刻工艺来形成多个狭缝。

公开(公告)号：US20140141154A1

公开(公告)日：2014-05-22

申请号：US13795399

申请日：2013-03-12

申请人： Jin-Kwang KIM ,  Seung-Yong SONG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Jae-Hyun KIM ,  Sung-Chul KIM

发明人： Jin-Kwang KIM ,  Seung-Yong SONG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Jae-Hyun KIM ,  Sung-Chul KIM

IPC分类号： H01B13/30 ,  H01B13/06

CPC分类号： H01L51/0021 ,  C23C14/24 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/50 ,  H01B13/30 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

摘要： A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

摘要翻译： 一种气相沉积装置，其中通过移动基板进行沉积工艺，所述气相沉积设备包括向基板注入至少一种原料气体的供应单元和对应于供应设置的阻塞气体流产生单元 并且产生阻挡原料气体流动的气流。

公开(公告)号：US20140113395A1

公开(公告)日：2014-04-24

申请号：US13795943

申请日：2013-03-12

申请人： In-Kyo KIM ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Cheol-Min JANG ,  Jae-Hyun KIM ,  Jin-Kwang KIM ,  Chang-Woo SHIM ,  Sung-Hun KEY

发明人： In-Kyo KIM ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Cheol-Min JANG ,  Jae-Hyun KIM ,  Jin-Kwang KIM ,  Chang-Woo SHIM ,  Sung-Hun KEY

IPC分类号： H01L21/30 ,  H01L51/52

CPC分类号： H01L21/30 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/545 ,  H01L51/52 ,  H01L51/56

摘要： A vapor deposition apparatus for depositing a thin film on a substrate includes a cover having an accommodation portion and a communicated portion, which communicated portion is connected to the accommodation portion and faces a direction of the substrate, and includes a body in the accommodation portion, which body includes a first portion and a second portion. The first portion is disposed at a first location of the body and connected to a first injection portion for injecting a first material onto the substrate, the second portion is disposed at a second location of the body and connected to a second injection portion for injecting a second material onto the substrate, and the body rotates in at least one direction so that the first portion and the second portion are alternately connected to each other with respect to the communicated portion.

摘要翻译： 一种用于在基片上沉积薄膜的气相沉积装置包括具有容纳部分和连通部分的盖子，该连通部分连接到容纳部分并面向基板的方向，并且包括在容纳部分中的主体， 该主体包括第一部分和第二部分。 第一部分设置在主体的第一位置并连接到用于将第一材料注入到基板上的第一注射部分，第二部分设置在主体的第二位置处并连接到第二注射部分，用于注射 第二材料到基板上，并且主体沿至少一个方向旋转，使得第一部分和第二部分相对于连通部交替地彼此连接。

公开(公告)号：US20140026814A1

公开(公告)日：2014-01-30

申请号：US13707948

申请日：2012-12-07

申请人： Jae-Hyun KIM ,  Jin-Kwang KIM ,  Myung-Soo HUH

发明人： Jae-Hyun KIM ,  Jin-Kwang KIM ,  Myung-Soo HUH

IPC分类号： H01L33/00

CPC分类号： H01L33/005 ,  C23C16/452 ,  C23C16/45519 ,  C23C16/54

摘要： A vapor deposition apparatus includes at least one first region and at least one second region. A first blocking unit is arranged between a first exhausting unit and a first injecting unit and between the first exhausting unit and a first purging unit in the first region so as to avoid any common region between the first exhausting unit and the first injecting unit and to avoid any common region between the first exhausting unit and the first purging unit. The vapor deposition apparatus also includes another first blocking unit arranged between a second exhausting unit and a second injecting unit and between the second exhausting unit and a second purging unit in the second region so as to avoid any common region between the second exhausting unit and the second injecting unit and to avoid any common region between the second exhausting unit and the second purging unit.

摘要翻译： 气相沉积设备包括至少一个第一区域和至少一个第二区域。 第一阻塞单元布置在第一排气单元和第一注入单元之间，并且在第一区域中的第一排气单元和第一排气单元之间，以避免第一排气单元和第一注入单元之间的任何共同区域，并且 避免第一排气单元和第一吹扫单元之间的任何共同区域。 蒸镀装置还包括在第二排气单元和第二喷射单元之间以及在第二区域中的第二排气单元和第二排出单元之间的另一个第一阻塞单元，以避免第二排气单元和第二排气单元之间的任何公共区域 第二喷射单元，并且避免第二排气单元和第二吹扫单元之间的任何公共区域。