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    SUBSTRATE PROCESSING APPARATUS
    1.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 失效
    基板加工设备

    公开(公告)号：US20090035103A1

    公开(公告)日：2009-02-05

    申请号：US12144680

    申请日：2008-06-24

    申请人： Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    发明人： Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    IPC分类号： H01L21/67

    CPC分类号： H01L21/67161

    摘要： A substrate processing apparatus includes first and second transfer chambers, first and second load lock chambers for exchanging one or more substrates with respective ones of first and the second transfer chambers, and a substrate transfer unit, located between the first and second load lock chambers, for transferring the one or more substrates to the first and second load lock chambers.

    摘要翻译： 基板处理装置包括第一和第二传送室，用于与第一和第二传送室中的相应的一个或多个基板交换一个或多个基板的第一和第二加载锁定室以及位于第一和第二加载锁定室之间的基板传送单元， 用于将一个或多个衬底传送到第一和第二负载锁定室。

    THIN FILM DEPOSITING APPARATUS AND THIN FILM DEPOSITING METHOD USING THE SAME
    3.
    发明申请
    THIN FILM DEPOSITING APPARATUS AND THIN FILM DEPOSITING METHOD USING THE SAME 有权
    薄膜沉积装置和薄膜沉积方法

    公开(公告)号：US20130266728A1

    公开(公告)日：2013-10-10

    申请号：US13613804

    申请日：2012-09-13

    申请人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

    发明人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45551

    摘要： In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

    摘要翻译： 在使用其的薄膜沉积装置和薄膜沉积方法中，制备分别驱动的第一喷射单元和第二喷射单元，驱动第一喷射单元以顺序地将第一沉积源和惰性气体喷射到 衬底，腔室被排出以从腔室中除去未从腔室吸附到衬底上的过量的第一沉积源，驱动第二喷射单元以顺序地将第二沉积源和惰性气体喷射到衬底上， 并且室被排出以从腔室中除去未吸附到基底上的多余的第二沉积源。 当使用薄膜沉积方法时，在沉积期间非常期望的微粒的产生被充分地抑制。

    Thin Film Depositing Apparatus and Thin Film Depositing Method Used by the Same
    4.
    发明申请
    Thin Film Depositing Apparatus and Thin Film Depositing Method Used by the Same 有权
    薄膜沉积设备及其使用的薄膜沉积方法

    公开(公告)号：US20130251902A1

    公开(公告)日：2013-09-26

    申请号：US13572420

    申请日：2012-08-10

    申请人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

    发明人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

    IPC分类号： C23C16/44 ,  C23C16/00

    CPC分类号： C23C16/45551 ,  C23C16/4583

    摘要： A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle.

    摘要翻译： 薄膜沉积设备使用的薄膜沉积设备和薄膜沉积方法。 薄膜沉积设备包括沉积室，沉积源的处理气体出口通过其沉积; 设置在所述沉积室中的传送梭，所述传送梭包括用于装载基底的安装板，所述传送梭相对于所述处理气体出口是往复的; 以及安装在所述传送梭的一侧的至少一个可弯曲辅助板，所述可弯曲辅助板在与所述工艺气体出口相对的位置处关闭所述工艺气体出口，所述可弯曲辅助板包括折叠构件，用于将所述可弯曲辅助板放置在 取决于转移梭的位置的弯曲状态和弯曲状态。

    Substrate processing apparatus
    6.
    发明授权
    Substrate processing apparatus 失效
    基板加工装置

    公开(公告)号：US08272826B2

    公开(公告)日：2012-09-25

    申请号：US12144680

    申请日：2008-06-24

    申请人： Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    发明人： Cheol Rae Jo ,  Jang-Wan Park ,  Won Ki Jeong

    IPC分类号： H01L21/677

    CPC分类号： H01L21/67161

    摘要： A substrate processing apparatus includes first and second transfer chambers, first and second load lock chambers for exchanging one or more substrates with respective ones of first and the second transfer chambers, and a substrate transfer unit, located between the first and second load lock chambers, for transferring the one or more substrates to the first and second load lock chambers.

    摘要翻译： 基板处理装置包括第一和第二传送室，用于与第一和第二传送室中的相应的一个或多个基板交换一个或多个基板的第一和第二加载锁定室以及位于第一和第二加载锁定室之间的基板传送单元， 用于将一个或多个衬底传送到第一和第二负载锁定室。

    Thin film deposition apparatus and thin film deposition method using the same
    7.
    发明授权
    Thin film deposition apparatus and thin film deposition method using the same 有权
    薄膜沉积装置和使用其的薄膜沉积方法

    公开(公告)号：US09045826B2

    公开(公告)日：2015-06-02

    申请号：US13613804

    申请日：2012-09-13

    申请人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

    发明人： Sang-Joon Seo ,  Myung-Soo Huh ,  Seung-Hun Kim ,  Jin-Kwang Kim ,  Cheol-Rae Jo ,  Choel-Min Jang ,  Jeong-Ho Yi

    IPC分类号： C23C16/455

    CPC分类号： C23C16/45551

    摘要： In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

    摘要翻译： 在使用其的薄膜沉积装置和薄膜沉积方法中，制备分别驱动的第一喷射单元和第二喷射单元，驱动第一喷射单元以顺序地将第一沉积源和惰性气体喷射到 衬底，腔室被排出以从腔室中除去未从腔室吸附到衬底上的过量的第一沉积源，驱动第二喷射单元以顺序地将第二沉积源和惰性气体喷射到衬底上， 并且室被排出以从腔室中除去未吸附到基底上的多余的第二沉积源。 当使用薄膜沉积方法时，在沉积期间非常期望的微粒的产生被充分地抑制。

    Thin film depositing apparatus and thin film depositing method used by the same
    9.
    发明授权
    Thin film depositing apparatus and thin film depositing method used by the same 有权
    薄膜沉积设备及其使用的薄膜沉积方法

    公开(公告)号：US08900662B2

    公开(公告)日：2014-12-02

    申请号：US13572420

    申请日：2012-08-10

    申请人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

    发明人： Sung-Yong Lee ,  Myung-Soo Huh ,  Choel-Min Jang ,  Cheol-Rae Jo ,  In-Kyo Kim ,  Yong-Suk Lee ,  Mi-Ra An ,  Sang-Joon Seo

    IPC分类号： C23C16/00 ,  C23C16/44

    CPC分类号： C23C16/45551 ,  C23C16/4583

    摘要： A thin film depositing apparatus and a thin film depositing method used by the thin film depositing apparatus. The thin film depositing apparatus includes a deposition chamber through which a process gas outlet of a deposition source is arranged; a transfer shuttle disposed in the deposition chamber, the transfer shuttle comprising a mounting plate for loading a substrate, the transfer shuttle being reciprocal with respect to the process gas outlet; and at least one bendable auxiliary plate installed at one side of the transfer shuttle, the bendable auxiliary plate closing the process gas outlet when opposite the process gas outlet, the bendable auxiliary plate comprising a folding member for placing the bendable auxiliary plate in each of an unbent state and bent state dependent upon the position of the transfer shuttle.

    摘要翻译： 薄膜沉积设备使用的薄膜沉积设备和薄膜沉积方法。 薄膜沉积设备包括沉积室，沉积源的处理气体出口通过其沉积; 设置在所述沉积室中的传送梭，所述传送梭包括用于装载基底的安装板，所述传送梭相对于所述处理气体出口是往复的; 以及安装在所述传送梭的一侧的至少一个可弯曲辅助板，所述可弯曲辅助板在与所述工艺气体出口相对的位置处关闭所述工艺气体出口，所述可弯曲辅助板包括折叠构件，用于将所述可弯曲辅助板放置在 取决于转移梭的位置的弯曲状态和弯曲状态。