Systems and methods for fabricating photo masks
    1.
    发明申请
    Systems and methods for fabricating photo masks 审中-公开
    制造光罩的系统和方法

    公开(公告)号:US20070111112A1

    公开(公告)日:2007-05-17

    申请号:US11598754

    申请日:2006-11-14

    IPC分类号: G03F1/00

    CPC分类号: G03F1/84

    摘要: A system and method for fabricating a photo mask are provided. The method includes preparing weak point data based on mask layout data, fabricating a photo mask based on the mask layout data and extracting critical point data by analyzing the aerial image of the fabricated photo mask based on the weak point data.

    摘要翻译: 提供了一种用于制造光罩的系统和方法。 该方法包括基于掩模布局数据制作弱点数据,基于掩模布局数据制造光掩模,并且通过基于弱点数据分析所制造的光掩膜的空间图像来提取临界点数据。

    Methods for forming pattern using electron beam and cell masks used in electron beam lithography
    2.
    发明授权
    Methods for forming pattern using electron beam and cell masks used in electron beam lithography 有权
    在电子束光刻中使用的电子束和细胞掩模形成图案的方法

    公开(公告)号:US07736838B2

    公开(公告)日:2010-06-15

    申请号:US11590878

    申请日:2006-11-01

    IPC分类号: G03C5/00

    摘要: Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.

    摘要翻译: 提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。 所述方法可以包括在衬底上形成抗蚀剂层,抗蚀剂层包括第一区域,围绕第一区域的第二区域和围绕第二区域的第三区域。 可以以第一剂量用电子束照射第二区域,并且可以以小于第一剂量的第二剂量用电子束照射第三区域。 细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。 透射区域可以从屏蔽区域延伸一段距离。 灰色图案区域可以设置在发送区域周围。 灰色图案区域可以包括具有小于分辨率限制的间距的图案。

    Binary photomask having a compensation layer
    3.
    发明授权
    Binary photomask having a compensation layer 失效
    具有补偿层的二进制光掩模

    公开(公告)号:US07745068B2

    公开(公告)日:2010-06-29

    申请号:US11446980

    申请日:2006-06-06

    IPC分类号: G03F1/14

    CPC分类号: G03F1/29

    摘要: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

    摘要翻译: 提供了具有改进的分辨率的二进制光掩模及其制造方法。 二元光掩模可以包括基板,形成在基板上以限定电路图案的传输防止图案,以及补偿层,其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光,并布置在透射 - 防止层和/或基板。

    Methods for forming pattern using electron beam and cell masks used in electron beam lithography
    4.
    发明申请
    Methods for forming pattern using electron beam and cell masks used in electron beam lithography 有权
    在电子束光刻中使用的电子束和细胞掩模形成图案的方法

    公开(公告)号:US20070166646A1

    公开(公告)日:2007-07-19

    申请号:US11590878

    申请日:2006-11-01

    IPC分类号: G03F1/00 G03C5/00

    摘要: Provided methods for forming a pattern using electron beam and cell masks for electron beam lithography. The methods may include forming a resist layer on a substrate, the resist layer including a first region, a second region surrounding the first region, and a third region surrounding the second region. The second may be irradiated with electron beam at a first dose, and the third region may be irradiated with an electron beam at a second dose less than the first dose. The cell mask may include a mask substrate and a shielding region disposed on the mask substrate. A transmitting region may extend a distance from the shielding region. A gray pattern region may be disposed around the transmitting region. The gray pattern region may include patterns having a pitch smaller than a resolution limit.

    摘要翻译: 提供了使用电子束形成图案的方法和用于电子束光刻的单元掩模。 所述方法可以包括在衬底上形成抗蚀剂层,抗蚀剂层包括第一区域,围绕第一区域的第二区域和围绕第二区域的第三区域。 可以以第一剂量用电子束照射第二区域,并且可以以小于第一剂量的第二剂量用电子束照射第三区域。 细胞掩模可以包括掩模基板和设置在掩模基板上的屏蔽区域。 透射区域可以从屏蔽区域延伸一段距离。 灰色图案区域可以设置在发送区域周围。 灰色图案区域可以包括具有小于分辨率限制的间距的图案。

    Photo mask having assist pattern and method of fabricating the same
    5.
    发明申请
    Photo mask having assist pattern and method of fabricating the same 失效
    具有辅助图案的光罩及其制造方法

    公开(公告)号:US20080090156A1

    公开(公告)日:2008-04-17

    申请号:US11821762

    申请日:2007-06-25

    IPC分类号: G03F1/00

    摘要: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

    摘要翻译: 光掩模具有高度可靠的辅助图案,并且提供了其制造方法。 光掩模包括透明基板,电路图案和辅助图案。 相对于其表面凹入透明基板的电路图案具有第一厚度,并且邻近于电路图案并且与电路图案间隔开的辅助图案相对于其表面凹入到透明基板中,同时具有较小的第二厚度 比第一厚度。

    Binary photomask having a compensation layer and method of manufacturing the same
    6.
    发明申请
    Binary photomask having a compensation layer and method of manufacturing the same 失效
    具有补偿层的二元光掩模及其制造方法

    公开(公告)号:US20070054200A1

    公开(公告)日:2007-03-08

    申请号:US11446980

    申请日:2006-06-06

    IPC分类号: C23C14/00 C23C14/32 G03F1/00

    CPC分类号: G03F1/29

    摘要: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

    摘要翻译: 提供了具有改进的分辨率的二进制光掩模及其制造方法。 二元光掩模可以包括基板,形成在基板上以限定电路图案的传输防止图案,以及补偿层,其被配置为基于补偿层的拓扑来改变透射二进制光掩模的光,并布置在透射 - 防止层和/或基板。

    METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME
    7.
    发明申请
    METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME 有权
    使用其制造光电子和光电子的方法

    公开(公告)号:US20130143150A1

    公开(公告)日:2013-06-06

    申请号:US13571043

    申请日:2012-08-09

    IPC分类号: G03F1/44

    CPC分类号: G03F1/44

    摘要: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

    摘要翻译: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜,在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案,并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束(e-beam)形成第一图案和第二图案。

    Pattern forming method
    8.
    发明申请
    Pattern forming method 审中-公开
    图案形成方法

    公开(公告)号:US20100266959A1

    公开(公告)日:2010-10-21

    申请号:US12662402

    申请日:2010-04-15

    IPC分类号: G03F7/20

    摘要: A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape.

    摘要翻译: 图案形成方法包括提供抗蚀剂,将第一电子束照射到抗蚀剂的第一区域,并且将第二电子束照射到沿着抗蚀剂的第一区域的边界限定的第二区域,其中第一电子 梁具有具有多边形形状的第一横截面,并且第二电子束具有具有多边形形状的第二横截面。

    Method for Inspecting Critical Dimension Uniformity at High Speed Measurement
    9.
    发明申请
    Method for Inspecting Critical Dimension Uniformity at High Speed Measurement 有权
    检测高速测量中临界尺寸均匀性的方法

    公开(公告)号:US20100111427A1

    公开(公告)日:2010-05-06

    申请号:US12607238

    申请日:2009-10-28

    IPC分类号: G06K9/68

    摘要: A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.

    摘要翻译: 用于检查光掩模图案的CD(CD)的均匀性的方法提高了产量。 该方法通过使用电子显微镜精确测量光掩模来获得CD。 然后,通过光学显微镜高速拍摄光掩模,获得具有形成在光掩模中的多个图案的测量图像。 当测量图像的开放密度相对较低时,通过仅捕获测量图像中的图案区域来计算基于CD的灰度级,并且获得估计值和相关系数。 因此,对于具有较低开放密度的测量图像的高速测量,可以更清楚地确认CD的均匀性。

    Method for manufacturing photomask and photomask manufactured using the same
    10.
    发明授权
    Method for manufacturing photomask and photomask manufactured using the same 有权
    制造使用其制造光掩模和光掩模的方法

    公开(公告)号:US08673522B2

    公开(公告)日:2014-03-18

    申请号:US13571043

    申请日:2012-08-09

    IPC分类号: G03F1/38

    CPC分类号: G03F1/44

    摘要: A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier.

    摘要翻译: 光掩模的制造方法包括在基板上形成光致抗蚀剂膜,在光致抗蚀剂膜上形成缺陷检测图案。 缺陷检测图案具有沿第一方向延伸的第一图案和与第一图案的一端重叠的第二图案,并且在与第一方向不同的第二方向上延伸。 使用由同一放大器衍射的电子束(e-beam)形成第一图案和第二图案。