摘要:
Methods of forming a semiconductor cell array region, a method of forming a semiconductor device including the semiconductor cell array region, and a method of forming a semiconductor module including the semiconductor device are provided, the methods of forming the semiconductor cell array region include preparing a semiconductor plate. A semiconductor layer may be formed over the semiconductor plate. The semiconductor layer may be etched to form semiconductor pillars over the semiconductor plate.
摘要:
A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.
摘要:
Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first direction relative to one another and a first source/drain region in a first trench that extends into the active pattern between the first and second gate electrodes. The first source/drain region includes a first epitaxial layer that is configured to fill the first trench and that includes at least one plane defect that originates at a top portion of the first epitaxial layer and extends towards a bottom portion of the first epitaxial layer.
摘要:
A method of manufacturing a semiconductor device includes forming first and second gate structures on a substrate in first and second regions, respectively, forming a first capping layer on the substrate by a first high density plasma process, such that the first capping layer covers the first and second gate structures except for sidewalls thereof, removing a portion of the first capping layer in the first region, removing an upper portion of the substrate in the first region using the first gate structure as an etching mask to form a first trench, and forming a first epitaxial layer to fill the first trench.
摘要:
A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.
摘要:
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.