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    SUBSTRATUM WITH CONDUCTIVE FILM AND PROCESS FOR PRODUCING THE SAME
    1.
    发明申请
    SUBSTRATUM WITH CONDUCTIVE FILM AND PROCESS FOR PRODUCING THE SAME 审中-公开
    具有导电膜的基体及其制造方法

    公开(公告)号：US20070228369A1

    公开(公告)日：2007-10-04

    申请号：US11759634

    申请日：2007-06-07

    申请人： Susumu Suzuki ,  Akira Mitsui ,  Kazuya Yaoita ,  Takuji Oyama

    发明人： Susumu Suzuki ,  Akira Mitsui ,  Kazuya Yaoita ,  Takuji Oyama

    IPC分类号： H01L29/08

    CPC分类号： C03C17/3417 ,  C03C2204/08 ,  C03C2218/33 ,  C23C14/024 ,  C23C14/086 ,  C23C14/5833 ,  C23C14/5873 ,  H01L51/52 ,  H01L51/5206

    摘要： A process for producing a substratum with conductive film excellent in surface smoothness, is provided which does not require complicated steps after film-forming such as heating treatment, polishing of film surface or oxygen plasma treatment after film-forming. The present invention provides a substratum with conductive film comprising a substratum and a conductive film containing tin-doped indium oxide as the main component, wherein a foundation film containing zirconium oxide doped with yttrium oxide as the main component is formed on the substratum side of the conductive film, and wherein the content of yttrium oxide in the foundation film is preferably from 0.1 to 50 mol % based on the total amount of Y2O3 and ZrO2.

    摘要翻译： 提供了具有优异表面光滑度的导电膜的基材的制造方法，其在成膜后不需要复杂的步骤，例如加热处理，膜表面研磨或成膜后的氧等离子体处理。 本发明提供了一种具有导电膜的基底，其具有基底和含有锡掺杂的氧化铟作为主要成分的导电膜，其中以氧化钇为主要成分掺杂氧化锆的基底膜形成在 导电膜，并且其中基础膜中的氧化钇的含量相对于Y 2 O 3 N 3和ZrO 3的总量优选为0.1〜50摩尔％ > 2 。

    Multilayer film-coated substrate and process for its production
    2.
    发明申请
    Multilayer film-coated substrate and process for its production 有权
    多层薄膜基材及其生产工艺

    公开(公告)号：US20050205998A1

    公开(公告)日：2005-09-22

    申请号：US11110849

    申请日：2005-04-21

    申请人： Tomohiro Yamada ,  Eiji Shidoji ,  Akira Mitsui ,  Takuji Oyama ,  Toshihisa Kamiyama

    发明人： Tomohiro Yamada ,  Eiji Shidoji ,  Akira Mitsui ,  Takuji Oyama ,  Toshihisa Kamiyama

    IPC分类号： C23C14/08 ,  C23C14/10 ,  H01L21/4763 ,  H01L23/48 ,  H01Q1/12

    CPC分类号： C23C14/10 ,  C23C14/083 ,  H01Q1/1271 ,  Y10T428/26 ,  Y10T428/266

    摘要： A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented. A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MOX which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from −100 MPa to +100 MPa.

    摘要翻译： 通过使用导电性溅射材料的溅射法，通过在基板上高速沉积包含金属氧化物膜和氧化硅膜的多层膜而使薄膜的应力弛豫的多层膜被覆基板，以及制造方法 提出了具有如此低应力的多层膜涂覆的基板。 一种多层膜被覆基板，包括基板和至少一层金属氧化物膜和氧化硅膜，其上重复层叠至少一次，其中至少一层所述金属氧化物膜是通过溅射沉积的金属氧化物膜，其通过使用作为 目标材料，缺氧量低于化学计量组成的金属氧化物MO X X，以使氧缺陷分解，多层膜的应力为-100MPa〜+100MPa。

    Multilayer film-coated substrate and process for its production
    4.
    发明授权
    Multilayer film-coated substrate and process for its production 有权
    多层薄膜基材及其生产工艺

    公开(公告)号：US07749622B2

    公开(公告)日：2010-07-06

    申请号：US11110849

    申请日：2005-04-21

    申请人： Tomohiro Yamada ,  Eiji Shidoji ,  Akira Mitsui ,  Takuji Oyama ,  Toshihisa Kamiyama

    发明人： Tomohiro Yamada ,  Eiji Shidoji ,  Akira Mitsui ,  Takuji Oyama ,  Toshihisa Kamiyama

    IPC分类号： G11B11/105 ,  C09J7/02 ,  B32B9/00 ,  B32B19/00 ,  F21V9/04 ,  G02B1/10 ,  G02B27/14

    CPC分类号： C23C14/10 ,  C23C14/083 ,  H01Q1/1271 ,  Y10T428/26 ,  Y10T428/266

    摘要： A multilayer film-coated substrate having the stress of the film relaxed by depositing a multilayer film comprising a metal oxide film and a silicon oxide film on a substrate at a high speed by a sputtering method using a conductive sputtering material, and a process for producing a multilayer film-coated substrate having such a low stress, are presented.A multilayer film-coated substrate comprising a substrate and at least a metal oxide film and a silicon oxide film laminated thereon repeatedly at least once, wherein at least one layer of said metal oxide film is a metal oxide film deposited by sputtering by using, as the target material, a metal oxide MOX which is deficient in oxygen than the stoichiometric composition, to have the oxygen deficiency resolved, and the stress of the multilayer film is from −100 MPa to +100 MPa.

    摘要翻译： 通过使用导电性溅射材料的溅射法，通过在基板上高速沉积包含金属氧化物膜和氧化硅膜的多层膜而使薄膜的应力弛豫的多层膜被覆基板，以及制造方法 提出了具有如此低应力的多层膜涂覆的基板。 一种多层膜被覆基板，包括基板和至少一层金属氧化物膜和氧化硅膜，其上重复层叠至少一次，其中至少一层所述金属氧化物膜是通过溅射沉积的金属氧化物膜，其通过使用作为 目标材料，缺氧比化学计量组成的金属氧化物MOX，氧缺陷分解，多层膜的应力为-100MPa〜+100MPa。

    Ti oxide film having visible light-responsive photocatalytic activites and process for its production
    5.
    发明申请
    Ti oxide film having visible light-responsive photocatalytic activites and process for its production 审中-公开
    具有可见光响应光催化活性的Ti氧化物膜及其制造方法

    公开(公告)号：US20060225999A1

    公开(公告)日：2006-10-12

    申请号：US11448874

    申请日：2006-06-08

    申请人： Makoto Fukawa ,  Hidefumi Odaka ,  Takuji Oyama ,  Akira Mitsui

    发明人： Makoto Fukawa ,  Hidefumi Odaka ,  Takuji Oyama ,  Akira Mitsui

    IPC分类号： C23C14/00

    CPC分类号： B01J21/063 ,  B01D53/007 ,  B01D53/885 ,  B01D2255/802 ,  B01J35/004 ,  B01J37/347 ,  C03C17/2456 ,  C03C17/256 ,  C03C17/3417 ,  C03C2217/71 ,  C23C14/083

    摘要： To provide a visible light responsible Ti oxide film which has hydrophilicity and antifogging property and is excellent in transparency and which has an ability to decompose gas by UV radiation, and a process for its production, as well as a Ti oxide film-coated substrate. A Ti oxide film formed on a substrate, characterized in that when a voltage is applied to the Ti oxide film while the Ti oxide film is irradiated with light of a xenon lamp having a luminance of 100 mW/cm2 and having ultraviolet light of less than 400 nm cutoff, the electric current value is at least 1,000 times the electric current value when the same voltage as said voltage is applied to the Ti oxide film in a dark place.

    摘要翻译： 为了提供具有亲水性和防雾性的可见光负载Ti氧化物膜，透明性优异，并且具有通过UV辐射分解气体的能力，以及其制造方法以及Ti氧化物膜被覆基板。 形成在基板上的Ti氧化膜，其特征在于，当对所述Ti氧化物膜施加电压时，在所述Ti氧化物膜用亮度为100mW / cm 2的氙灯的光照射的同时， 并且具有小于400nm截止的紫外线，当在暗处加有与所述电压相同的电压至Ti氧化物膜时，电流值为电流值的至少1,000倍。