公开(公告)号：US20130239869A1

公开(公告)日：2013-09-19

申请号：US13885163

申请日：2011-11-07

申请人： Sven-Christian Hesse ,  Joerg Kalwa ,  Ralf Richter

发明人： Sven-Christian Hesse ,  Joerg Kalwa ,  Ralf Richter

IPC分类号： B63G8/20 ,  B63B45/02

CPC分类号： B63G8/20 ,  B63B45/02 ,  B63G7/02 ,  B63G8/001 ,  E02F3/8866 ,  E02F3/90 ,  E02F3/907 ,  E02F3/9206 ,  E02F3/9243

摘要： An underwater vehicle configured to be remote-controllable and maneuverable includes a device which is configured to uncover a submerged object. The device comprises a working nozzle configured to conduct a water flow and a counter pressure nozzle configured to counteract the working nozzle.

摘要翻译： 被配置为可远程控制和可操纵的水下航行器包括被配置为露出浸没物体的装置。 该装置包括构造成传导水流的工作喷嘴和构造成抵消加工喷嘴的反压喷嘴。

公开(公告)号：US20140116312A1

公开(公告)日：2014-05-01

申请号：US14125971

申请日：2012-07-19

申请人： Jorg Kalwa ,  Ralf Richter ,  Sven-Christian Hesse

发明人： Jorg Kalwa ,  Ralf Richter ,  Sven-Christian Hesse

IPC分类号： B63B69/00 ,  B63B35/40

CPC分类号： B63B69/00 ,  B63B27/36 ,  B63B35/40 ,  B63G8/001

摘要： The invention relates to a system and a method for recovering a submarine vehicle. The submarine vehicle is pulled by a rope and hauled by means of the rope and a recovery ramp from the body of water on board a ship or onto land. The system comprises the recovery ramp and a wave equalization ramp. The wave compensation ramp can be rotated relative to the recovery ramp about a swivel axis S and is supported by a floating body. The watercraft is picked up by means of the recovery ramp. The wave compensation ramp is hauled together with the picked-up submarine vehicle by means of the recovery ramp. The invention permits the recovery of a submarine vehicle, even in moderate or heavy seas, with less risk of damage to the submarine vehicle.

摘要翻译： 本发明涉及一种用于回收潜艇车辆的系统和方法。 潜艇车辆由绳索牵引，并通过绳索和从船体上的水体或陆地上的水道进行回收。 该系统包括恢复斜坡和波均衡斜坡。 波形补偿斜坡可以围绕旋转轴S相对于恢复斜面旋转，并且由浮体支撑。 通过恢复坡道拾起船只。 波浪补偿斜坡与拾取的潜艇一起通过恢复坡道牵引。 本发明允许潜艇车辆的恢复，即使在中等或大海，潜艇风险也较小。

公开(公告)号：US09034744B2

公开(公告)日：2015-05-19

申请号：US12942200

申请日：2010-11-09

申请人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

发明人： Ralf Richter ,  Jens Heinrich ,  Andy Wei

IPC分类号： H01L29/772 ,  H01L21/8238 ,  H01L21/768 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L21/823842 ,  H01L21/76819 ,  H01L21/823807 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder material. In some illustrative embodiments, the placeholder material may be exposed by an etch process based on a sacrificial mask material.

摘要翻译： 在替代栅极方法中，栅极电极结构的占位符材料的暴露可以基于蚀刻工艺来实现，从而避免引入与工艺相关的非均匀性，这通常与复杂的抛光工艺相关 暴露占位符材料的顶面。 在一些说明性实施例中，占位符材料可以通过基于牺牲掩模材料的蚀刻工艺曝光。

公开(公告)号：US08951907B2

公开(公告)日：2015-02-10

申请号：US12968068

申请日：2010-12-14

申请人： Ralf Richter ,  Jens Heinrich ,  Holger Schuehrer

发明人： Ralf Richter ,  Jens Heinrich ,  Holger Schuehrer

IPC分类号： H01L21/4763 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485

CPC分类号： H01L21/76808 ,  H01L21/28512 ,  H01L21/76802 ,  H01L21/76897 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Apparatus for semiconductor device structures and related fabrication methods are provided. One method for fabricating a semiconductor device structure involves forming a layer of dielectric material overlying a doped region formed in a semiconductor substrate adjacent to a gate structure and forming a conductive contact in the layer of dielectric material. The conductive contact overlies and electrically connects to the doped region. The method continues by forming a second layer of dielectric material overlying the conductive contact, forming a voided region in the second layer overlying the conductive contact, forming a third layer of dielectric material overlying the voided region, and forming another voided region in the third layer overlying at least a portion of the voided region in the second layer. The method continues by forming a conductive material that fills both voided regions to contact the conductive contact.

摘要翻译： 提供了半导体器件结构和相关制造方法的装置。 一种用于制造半导体器件结构的方法包括形成覆盖在与栅极结构相邻的半导体衬底中形成的掺杂区域的介电材料层，并在该介电材料层中形成导电接触。 导电接触覆盖并电连接到掺杂区域。 该方法继续通过形成覆盖导电接触的第二层介电材料，在覆盖导电接触的第二层中形成空隙区域，形成覆盖空隙区域的第三层电介质材料，以及在第三层中形成另一个空隙区域 覆盖第二层中的空隙区域的至少一部分。 该方法通过形成填充两个空隙区域以接触导电触点的导电材料而继续。

公开(公告)号：US08697584B2

公开(公告)日：2014-04-15

申请号：US12017175

申请日：2008-01-21

申请人： Ralf Richter ,  Andy Wei ,  Roman Boschke

发明人： Ralf Richter ,  Andy Wei ,  Roman Boschke

IPC分类号： H01L21/31

CPC分类号： H01L21/823807 ,  H01L29/7843

摘要： By forming an additional dielectric material, such as silicon nitride, after patterning dielectric liners of different intrinsic stress, a significant increase of performance of N-channel transistors may be obtained while substantially not contributing to a performance loss of the P-channel transistor.

摘要翻译： 通过在构成不同固有应力的介电衬垫的图案之后形成诸如氮化硅的附加电介质材料，可以获得N沟道晶体管的性能的显着提高，同时基本上不会导致P沟道晶体管的性能损失。

公开(公告)号：US20140048912A1

公开(公告)日：2014-02-20

申请号：US13588460

申请日：2012-08-17

申请人： Joerg Hohage ,  Hartmut Ruelke ,  Ralf Richter

发明人： Joerg Hohage ,  Hartmut Ruelke ,  Ralf Richter

IPC分类号： H01L21/31 ,  H01L29/06

CPC分类号： H01L21/76832 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76834 ,  H01L21/823807 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7843

摘要： The present disclosure provides manufacturing techniques and semiconductor devices in which performance of P-channel transistors may be enhanced on the basis of a stress mechanism that involves the deposition of a dielectric bi-layer system. Contrary to conventional strategies, an additional pre-treatment may be performed prior to the deposition of an adhesion layer in a plasma-free process atmosphere, thereby enabling a reduced thickness of the adhesion layer and a higher internal stress level of the subsequent top layer.

摘要翻译： 本公开提供了制造技术和半导体器件，其中可以基于涉及沉积介电双层系统的应力机制来增强P沟道晶体管的性能。 与常规策略相反，可以在粘附层在无等离子体的工艺气氛中沉积之前进行另外的预处理，从而能够减小粘合层的厚度和随后的顶层的更高的内应力水平。

公开(公告)号：US08541885B2

公开(公告)日：2013-09-24

申请号：US13107515

申请日：2011-05-13

申请人： Martin Gerhardt ,  Ralf Richter ,  Thomas Feudel ,  Uwe Griebenow

发明人： Martin Gerhardt ,  Ralf Richter ,  Thomas Feudel ,  Uwe Griebenow

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L29/7842 ,  H01L21/823807 ,  H01L21/823871 ,  H01L23/485 ,  H01L29/41758 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

摘要： By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.

摘要翻译： 通过局部地适应接触结构的尺寸和/或密度，例如，在单个晶体管内或以更全球化的方式，可以增加先进半导体器件的整体性能。 因此，可以考虑接触结构和局部器件特性之间的相互作用。 另一方面，可以保持与常规工艺策略的高度兼容性。

公开(公告)号：US08497554B2

公开(公告)日：2013-07-30

申请号：US12942506

申请日：2010-11-09

申请人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

发明人： Andy Wei ,  Jens Heinrich ,  Ralf Richter

IPC分类号： H01L23/62

CPC分类号： H01L23/5256 ,  H01L27/0617 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： In a replacement gate approach for forming high-k metal gate electrode structures, electronic fuses may be provided on the basis of a semiconductor material in combination with a metal silicide by using a recessed surface topography and/or a superior selectivity of the metal silicide material during the replacement gate process. For example, in some illustrative embodiments, electronic fuses may be provided in a recessed portion of an isolation region, thereby avoiding the removal of the semiconductor material when replacing the semiconductor material of the gate electrode structures with a metal-containing electrode material. Consequently, the concept of well-established semiconductor-based electronic fuses may be applied together with sophisticated replacement gate structures of transistors.

摘要翻译： 在用于形成高k金属栅电极结构的替代栅极方法中，可以通过使用凹陷表面形貌和/或金属硅化物材料的优异选择性，基于半导体材料与金属硅化物的组合来提供电子熔丝 在替换门过程中。 例如，在一些说明性实施例中，电子熔丝可以设置在隔离区域的凹陷部分中，从而避免了当用含金属的电极材料替换栅电极结构的半导体材料时去除半导体材料。 因此，已经确立的基于半导体的电子熔丝的概念可以与晶体管的复杂的替代栅极结构一起应用。

公开(公告)号：US08492269B2

公开(公告)日：2013-07-23

申请号：US13234529

申请日：2011-09-16

申请人： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

发明人： Jens Heinrich ,  Ralf Richter ,  Torsten Huisinga ,  Kai Frohberg

IPC分类号： H01L21/4763

CPC分类号： H01L21/76807 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53238 ,  H01L23/53257 ,  H01L27/10855 ,  H01L27/10888 ,  H01L2924/0002 ,  H01L2924/00

摘要： In sophisticated semiconductor devices, superior contact resistivity may be accomplished for a given contact configuration by providing hybrid contact elements, at least a portion of which may be comprised of a highly conductive material, such as copper. To this end, a well-established contact material, such as tungsten, may be used as buffer material in order to preserve integrity of sensitive device areas upon depositing the highly conductive metal.

摘要翻译： 在复杂的半导体器件中，通过提供混合接触元件，对于给定的接触构型可以实现优异的接触电阻率，其中至少一部分可由高导电材料（例如铜）构成。 为此，可以使用诸如钨的良好接触材料作为缓冲材料，以便在沉积高导电性金属时保持敏感器件区域的完整性。

公开(公告)号：US08445378B2

公开(公告)日：2013-05-21

申请号：US12839455

申请日：2010-07-20

申请人： Stephan Kronholz ,  Markus Lenski ,  Ralf Richter

发明人： Stephan Kronholz ,  Markus Lenski ,  Ralf Richter

IPC分类号： H01L21/768

CPC分类号： H01L27/281 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0003 ,  H01L51/0591

摘要： Memory cells in integrated circuit devices may be formed on the basis of functional molecules which may be positioned within via openings on the basis of appropriate patterning techniques, which may also be used for forming semiconductor-based integrated circuits. Consequently, memory cells may be formed on a “molecular” level without requiring extremely sophisticated patterning regimes, such as electron beam lithography and the like.

摘要翻译： 可以基于功能分子形成集成电路器件中的存储器单元，功能分子可以基于合适的图案化技术而定位在通孔开口内，该技术也可用于形成基于半导体的集成电路。 因此，可以在“分子”水平上形成记忆单元，而不需要非常复杂的图案化方案，例如电子束光刻等。