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公开(公告)号：US5668388A
公开(公告)日：1997-09-16
申请号：US674564
申请日：1996-07-05
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/205 , H01L29/737 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/0804 , H01L29/7371
摘要： A bipolar transistor in which the emitter possesses a double "mesa" structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.
摘要翻译： 一种双极晶体管，其中发射极具有双“台面”结构，以便最大限度地避免对电流增益产生有害影响的电子/空穴复合现象。 双台面发射器可以由相对于一对蚀刻方法具有不同类型行为的材料MI / MII的交替构成。 这些材料可以是GaInP和GaAs。
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公开(公告)号：US20140326943A1
公开(公告)日：2014-11-06
申请号：US14234328
申请日：2012-07-20
IPC分类号： H01J1/308
摘要： A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.
摘要翻译： 用于真空中电子发射的半导体器件包括根据序列N /（P）/ N的两个或多个N型和P型半导体层的堆叠，形成两个头对尾NP结的并置，材料 属于III-N族，两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料，其中电子达到高能量，具有带隙Eg> c / 2，其中c是半导体材料的电子亲和力，P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得，以在层之间的任何界面中显示负的固定电荷，施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子， 需要通过输出层的发射区在真空中发射。
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公开(公告)号：US5194403A
公开(公告)日：1993-03-16
申请号：US769837
申请日：1991-10-02
IPC分类号： H01L21/28 , H01L21/306 , H01L21/331 , H01L21/60 , H01L29/73 , H01L29/737
CPC分类号： H01L21/76897 , H01L21/28 , H01L21/30621 , H01L29/66318
摘要： The aim of the method is to prevent parasitic metallizations on the lateral walls of a raised pattern, which is used to self-align the electrode metallizations in a transistor. To this effect, a pair of semiconductor materials is introduced into the vertical pattern. These semiconductor materials react differently with respect to a pair of etching methods, so that a layer of one semiconductor material is etched to a greater extent than the other layer. The overhanging feature thus created interrupts the parasitic metallizations, if any, between the electrodes. The disclosed method can be applied to vertical structures.
摘要翻译： 该方法的目的是防止凸起图案的侧壁上的寄生金属化，其用于自对准晶体管中的电极金属化。 为此，将一对半导体材料引入垂直图案。 这些半导体材料相对于一对蚀刻方法反应不同，使得一层半导体材料的层被蚀刻到比另一层更大的程度。 由此产生的突出特征中断了电极之间的寄生金属化（如果有的话）。 所公开的方法可以应用于垂直结构。
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公开(公告)号：US09305734B2
公开(公告)日：2016-04-05
申请号：US14234328
申请日：2012-07-20
摘要： A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.
摘要翻译： 用于真空中电子发射的半导体器件包括根据序列N /（P）/ N的两个或多个N型和P型半导体层的堆叠，形成两个头对尾NP连接的并置，材料 属于III-N族，两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料，其中电子达到高能量，具有带隙Eg> c / 2，其中c是半导体材料的电子亲和力，P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得，以在层之间的任何界面中显示负的固定电荷，施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子， 需要通过输出层的发射区在真空中发射。
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公开(公告)号：US5719433A
公开(公告)日：1998-02-17
申请号：US672844
申请日：1996-07-25
申请人： Sylvain Delage , Simone Cassette , Herve Blanck , Eric Chartier
发明人： Sylvain Delage , Simone Cassette , Herve Blanck , Eric Chartier
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L23/34 , H01L23/367 , H01L23/522 , H01L27/06 , H01L29/737
CPC分类号： H01L23/5221 , H01L23/367 , H01L2924/0002
摘要： A semiconductor component that could be a power transistor type of component comprises mesa-structured elementary bipolar transistors. This component has a thick, metal heat sink of which a part (PI) takes the form of a bridge and a part is in contact with the substrate. The legs of the bridge lie on the entire unit constituted by the mesas. The heat sink made on the front face of the substrate may be connected to the rear face of the substrate comprising a ground plate. The discharging of the heat is thus appreciably fostered.
摘要翻译： 可以是功率晶体管类型的部件的半导体部件包括台面结构的基本双极晶体管。 该部件具有厚的金属散热器，其中部分（PI）采取桥的形式，并且部分与基板接触。 桥梁的腿位于由台面构成的整个单元上。 在基板的正面上形成的散热片可以连接到包括接地板的基板的背面。 因此，明显地促进了放热。
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6.发明授权
公开(公告)号：US5411632A
公开(公告)日：1995-05-02
申请号：US147482
申请日：1993-11-05
申请人： Sylvain Delage , Herve Blanck , Simone Cassette
发明人： Sylvain Delage , Herve Blanck , Simone Cassette
IPC分类号： H01L21/302 , H01L21/306 , H01L21/308 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L21/00
CPC分类号： H01L29/66318 , H01L21/30612 , H01L21/30621 , H01L21/3081 , H01L29/7371 , Y10S438/978
摘要： Disclosed is a method for the etching of at least two layers of semiconductor materials having different natures, with a view to making a mesa for the self-alignment of the metallizations of a transistor. The heterojunction must comprise a first layer of a material containing As, which is etched by reactive ion etching, and a second layer of a material containing P which is etched chemically. Application to the making of HBT type vertical heterojunction transistors.
摘要翻译： 公开了一种用于蚀刻具有不同性质的至少两层半导体材料的方法，以便制造用于晶体管的金属化的自对准的台面。 异质结必须包括通过反应离子蚀刻蚀刻的包含As的材料的第一层和包含被化学蚀刻的P的材料的第二层。 应用于制造HBT型垂直异质结晶体管。
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7.发明授权Bipolar transistor with upper heterojunction collector and method for making same 有权具有上异质结集电极的双极晶体管及其制造方法公开(公告)号：US06858509B2
公开(公告)日：2005-02-22
申请号：US10149433
申请日：2000-12-15
IPC分类号： H01L21/265 , H01L21/331 , H01L29/737
CPC分类号： H01L29/66318 , H01L29/7371
摘要： A collector-up heterojunction bipolar transistor including, stacked on a substrate, an emitter layer, a base layer, and a collector layer. In this transistor the surface area of the base-emitter junction is of smaller dimensions than the surface area of the base-collector junction. Further, the material of the base layer exhibits a sensitivity of the electrical conductivity to ion implantation that is lower than the sensitivity of the electrical conductivity of the material of the emitter layer to the same ion implantation.
摘要翻译： 一种收集器异质结双极晶体管，包括堆叠在基板上的发射极层，基极层和集电极层。 在该晶体管中，基极 - 发射极结的表面积比基极 - 集电极结的表面积小。 此外，基层的材料表现出离子注入的电导率的灵敏度低于发射极层的材料对相同的离子注入的电导率的灵敏度。
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8.发明授权Large-scale integration monolithic microwave amplifier with tree-like distributed topology 失效具有树状分布拓扑的大规模集成单片微波放大器
公开(公告)号：US5689212A
公开(公告)日：1997-11-18
申请号：US562153
申请日：1995-11-22
申请人： Didier Floriot , Sylvain Delage , Pascal Roux , Juan Obregon
发明人： Didier Floriot , Sylvain Delage , Pascal Roux , Juan Obregon
IPC分类号： H01L29/737 , H03F3/60 , H03F3/68 , H03F3/195
CPC分类号： H03F3/602 , H01L29/7371 , H03F3/605
摘要： Disclosed is a novel topology of monolithic, microwave amplifiers with high integration. This is a more compact topology, divided into a two-level or tree-like structure in which the division of the input signal is done firstly on each transistor Tij and, secondly, on each of the elementary transistors tijk of the transistors Tij. More specifically, the input line LE is divided into different basic lines li, each line li supplying lines lij distributed on either side of said lines li, a line lij then supplying a power transistor Tij. Application to microwave amplifiers.
摘要翻译： 公开了具有高集成度的单片微波放大器的新颖拓扑。 这是一种更紧凑的拓扑，分为两级或树状结构，其中首先在每个晶体管Tij上完成输入信号的划分，其次在晶体管Tij的每个基本晶体管tijk上进行。 更具体地说，输入线LE被分成不同的基线L1，每条线路li提供分布在所述线路li的任一侧的线路lij，然后提供功率晶体管Tij的线路lij。 应用于微波放大器。
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9.发明授权Method for forming a bipolar transistor stabilized with electrical insulating elements 有权用电绝缘元件稳定的双极晶体管的形成方法公开(公告)号：US06451659B1
公开(公告)日：2002-09-17
申请号：US09453576
申请日：1999-12-03
IPC分类号： H01L21331
CPC分类号： H01L29/66318 , H01L23/367 , H01L29/0817 , H01L29/7371 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
摘要翻译： 异质结双极晶体管类型的半导体部件在衬底上包括放置在基底上的集电极，基极和台面状发射体。 双极晶体管还包括与基极和发射极台面的侧面接触的电绝缘元件，所述元件具有与台面的宽度相同幅度的宽度，并为组件提供更大的稳定性。 此外，制造这种部件的方法特别包括通过发射极台面的构成层离子注入绝缘离子以确定电绝缘元件的步骤。
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公开(公告)号：US6031255A
公开(公告)日：2000-02-29
申请号：US86599
申请日：1998-05-29
IPC分类号： H01L29/73 , H01L21/331 , H01L23/367 , H01L29/08 , H01L29/205 , H01L29/737
CPC分类号： H01L29/66318 , H01L23/367 , H01L29/0817 , H01L29/7371 , H01L2924/0002
摘要： A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
摘要翻译： 异质结双极晶体管类型的半导体部件在衬底上包括放置在基底上的集电极，基极和台面状发射体。 双极晶体管还包括与基极和发射极台面的侧面接触的电绝缘元件，所述元件具有与台面的宽度相同幅度的宽度，并为组件提供更大的稳定性。 此外，制造这种部件的方法特别包括通过发射极台面的构成层离子注入绝缘离子以确定电绝缘元件的步骤。
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