公开(公告)号：US20210391186A1

公开(公告)日：2021-12-16

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US11658065B2

公开(公告)日：2023-05-23

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09K3/14 ,  C09G1/02 ,  H01L21/321

CPC classification number: H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  C09K3/1481 ,  H01L21/3212 ,  H01L21/76877

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US11508585B2

公开(公告)日：2022-11-22

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  C09G1/02 ,  B24B37/10 ,  B24B37/04

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US20210391208A1

公开(公告)日：2021-12-16

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  C09K3/14

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US12002684B2

公开(公告)日：2024-06-04

申请号：US18057728

申请日：2022-11-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

CPC classification number: H01L21/3212 ,  B24B37/044 ,  B24B37/107 ,  C09G1/02

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

公开(公告)号：US11772228B2

公开(公告)日：2023-10-03

申请号：US16746292

申请日：2020-01-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B37/015 ,  B24B57/02 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20210220964A1

公开(公告)日：2021-07-22

申请号：US16746292

申请日：2020-01-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  H01L21/306 ,  B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.