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公开(公告)号：US20210391186A1
公开(公告)日：2021-12-16
申请号：US16902180
申请日：2020-06-15
Inventor： Ji Cui , Fu-Ming Huang , Ting-Kui Chang , Tang-Kuei Chang , Chun-Chieh Lin , Wei-Wei Liang , Liang-Guang Chen , Kei-Wei Chen , Hung Yen , Ting-Hsun Chang , Chi-Hsiang Shen , Li-Chieh Wu , Chi-Jen Liu
IPC: H01L21/321 , B24B37/04 , B24B37/10 , C09G1/02
Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.
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公开(公告)号：US20210053180A1
公开(公告)日：2021-02-25
申请号：US16550021
申请日：2019-08-23
Inventor： Michael Yen , Kao-Feng Liao , Hsin-Ying Ho , Chun-Wen Hsiao , Sheng-Chao Chuang , Ting-Hsun Chang , Fu-Ming Huang , Chun-Chieh Lin , Peng-Chung Jangjian , Ji James Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/26 , B24B37/24 , B24B37/005
Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
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公开(公告)号：US12131944B2
公开(公告)日：2024-10-29
申请号：US17460929
申请日：2021-08-30
Inventor： Chun-Wei Hsu , Chih-Chieh Chang , Yi-Sheng Lin , Jian-Ci Lin , Jeng-Chi Lin , Ting-Hsun Chang , Liang-Guang Chen , Ji Cui , Kei-Wei Chen , Chi-Jen Liu
IPC: H01L21/768 , C09G1/02 , H01L23/522
CPC classification number: H01L21/7684 , C09G1/02 , H01L21/76877 , H01L23/5226
Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.
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公开(公告)号：US12002684B2
公开(公告)日：2024-06-04
申请号：US18057728
申请日：2022-11-21
Inventor： Ji Cui , Fu-Ming Huang , Ting-Kui Chang , Tang-Kuei Chang , Chun-Chieh Lin , Wei-Wei Liang , Liang-Guang Chen , Kei-Wei Chen , Hung Yen , Ting-Hsun Chang , Chi-Hsiang Shen , Li-Chieh Wu , Chi-Jen Liu
IPC: H01L21/321 , B24B37/04 , B24B37/10 , C09G1/02
CPC classification number: H01L21/3212 , B24B37/044 , B24B37/107 , C09G1/02
Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.
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公开(公告)号：US11772228B2
公开(公告)日：2023-10-03
申请号：US16746292
申请日：2020-01-17
Inventor： Ting-Hsun Chang , Hung Yen , Chi-Hsiang Shen , Fu-Ming Huang , Chun-Chieh Lin , Tsung Hsien Chang , Ji Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/16 , B24B57/02 , B24B37/015 , H01L21/306
CPC classification number: B24B37/16 , B24B37/015 , B24B57/02 , H01L21/30625
Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.
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Patent Agency Ranking
公开(公告)号：US20210220964A1
公开(公告)日：2021-07-22
申请号：US16746292
申请日：2020-01-17
Inventor： Ting-Hsun Chang , Hung Yen , Chi-Hsiang Shen , Fu-Ming Huang , Chun-Chieh Lin , Tsung Hsien Chang , Ji Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/16 , H01L21/306 , B24B37/015 , B24B57/02
Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.
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公开(公告)号：US11679469B2
公开(公告)日：2023-06-20
申请号：US16550021
申请日：2019-08-23
Inventor： Michael Yen , Kao-Feng Liao , Hsin-Ying Ho , Chun-Wen Hsiao , Sheng-Chao Chuang , Ting-Hsun Chang , Fu-Ming Huang , Chun-Chieh Lin , Peng-Chung Jangjian , Ji James Cui , Liang-Guang Chen , Chih Hung Chen , Kei-Wei Chen
IPC: B24B37/26 , B24B37/005 , B24B37/24 , B24B37/04
CPC classification number: B24B37/26 , B24B37/005 , B24B37/042 , B24B37/24
Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.
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公开(公告)号：US20210391208A1
公开(公告)日：2021-12-16
申请号：US16902203
申请日：2020-06-15
Inventor： Ji Cui , Fu-Ming Huang , Ting-Kui Chang , Tang-Kuei Chang , Chun-Chieh Lin , Wei-Wei Liang , Chi-Hsiang Shen , Ting-Hsun Chang , Li-Chieh Wu , Hung Yen , Chi-Jen Liu , Liang-Guang Chen , Kei-Wei Chen
IPC: H01L21/768 , C09G1/02 , C09K3/14
Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.
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公开(公告)号：US20190103308A1
公开(公告)日：2019-04-04
申请号：US15939894
申请日：2018-03-29
Inventor： Chun-Wei Hsu , Ling-Fu Nieh , Pinlei Edmund Chu , Chi-Jen Liu , Yi-Sheng Lin , Ting-Hsun Chang , Chia-Wei Ho , Liang-Guang Chen
IPC: H01L21/768 , H01L23/522 , H01L23/532
Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.
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公开(公告)号：US11658065B2
公开(公告)日：2023-05-23
申请号：US16902203
申请日：2020-06-15
Inventor： Ji Cui , Fu-Ming Huang , Ting-Kui Chang , Tang-Kuei Chang , Chun-Chieh Lin , Wei-Wei Liang , Chi-Hsiang Shen , Ting-Hsun Chang , Li-Chieh Wu , Hung Yen , Chi-Jen Liu , Liang-Guang Chen , Kei-Wei Chen
IPC: H01L21/768 , C09K3/14 , C09G1/02 , H01L21/321
CPC classification number: H01L21/7684 , C09G1/02 , C09K3/1463 , C09K3/1481 , H01L21/3212 , H01L21/76877
Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.
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