公开(公告)号：US20210391186A1

公开(公告)日：2021-12-16

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US20170304990A1

公开(公告)日：2017-10-26

申请号：US15136706

申请日：2016-04-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Kui Chang ,  Fu-Ming Huang ,  Liang-Guang Chen ,  Chun-Chieh Lin

IPC: B24B37/20 ,  B24B37/005

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/30

Abstract: A polisher head of a polishing apparatus includes a membrane and a first local pressure nodule and a second local pressure nodule physically contacting the membrane. The first local pressure nodule is configured to apply a first local force to the membrane and the second local pressure nodule is configured to apply a second local force to the membrane. The first local pressure nodule and the second local pressure nodule are independently controllable.

公开(公告)号：US20240021468A1

公开(公告)日：2024-01-18

申请号：US18446217

申请日：2023-08-08

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Hsin Chan ,  Cai-Ling Wu ,  Chang-Wen Chen ,  Po-Hsiang Huang ,  Yu-Yu Chen ,  Kuan-Wei Huang ,  Jr-Hung Li ,  Jay Chiu ,  Ting-Kui Chang

IPC: H01L21/768 ,  H01L29/417 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L29/41725 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76852 ,  H01L23/5222 ,  H01L23/53295 ,  H01L21/76885 ,  H01L21/7688 ,  H01L21/76831 ,  H01L21/76834

Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

公开(公告)号：US20210391208A1

公开(公告)日：2021-12-16

申请号：US16902203

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Chi-Hsiang Shen ,  Ting-Hsun Chang ,  Li-Chieh Wu ,  Hung Yen ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  C09K3/14

Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

公开(公告)号：US20170092481A1

公开(公告)日：2017-03-30

申请号：US14870946

申请日：2015-09-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  B08B1/04 ,  H01L21/67 ,  H01L21/306 ,  H01L21/687 ,  B08B1/00 ,  B08B3/04

CPC classification number: H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20240379556A1

公开(公告)日：2024-11-14

申请号：US18782224

申请日：2024-07-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hung Tsai ,  Chao-Hsun Wang ,  Pei-Hsuan Lee ,  Chih-Chien Chi ,  Ting-Kui Chang ,  Fu-Kai Yang ,  Mei-Yun Wang

IPC: H01L23/532 ,  H01L21/768 ,  H01L29/417

Abstract: A semiconductor device includes a source/drain component of a transistor. A source/drain contact is disposed over the source/drain component. A source/drain via is disposed over the source/drain contact. The source/drain via contains copper. A first liner at least partially surrounds the source/drain via. A second liner at least partially surrounds the first liner. The first liner and the second liner are disposed between the source/drain contact and the source/drain via. The first liner and the second liner have different material compositions.

公开(公告)号：US12046506B2

公开(公告)日：2024-07-23

申请号：US17382873

申请日：2021-07-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Hsin Chan ,  Cai-Ling Wu ,  Chang-Wen Chen ,  Po-Hsiang Huang ,  Yu-Yu Chen ,  Kuan-Wei Huang ,  Jr-Hung Li ,  Jay Chiu ,  Ting-Kui Chang

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/417

CPC classification number: H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76852 ,  H01L21/7688 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/53295 ,  H01L29/41725

Abstract: In one example aspect, the present disclosure is directed to a method. The method includes receiving a workpiece having a conductive feature over a semiconductor substrate, forming a sacrificial material layer over the conductive feature, removing first portions of the sacrificial material layer to form line trenches and to expose a top surface of the conductive feature in one of the line trenches; forming line features in the line trenches, removing second portions of the sacrificial material layer to form gaps between the line features, and forming dielectric features in the gaps, the dielectric features enclosing an air gap.

公开(公告)号：US10269555B2

公开(公告)日：2019-04-23

申请号：US14870946

申请日：2015-09-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: B08B7/00 ,  H01L21/02 ,  B08B1/00 ,  B08B1/04 ,  B08B3/04 ,  H01L21/306 ,  H01L21/67 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US09962805B2

公开(公告)日：2018-05-08

申请号：US15136706

申请日：2016-04-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Kui Chang ,  Fu-Ming Huang ,  Liang-Guang Chen ,  Chun-Chieh Lin

IPC: B24B37/00 ,  B24B37/20 ,  B24B37/005

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/30

Abstract: A polisher head of a polishing apparatus includes a membrane and a first local pressure nodule and a second local pressure nodule physically contacting the membrane. The first local pressure nodule is configured to apply a first local force to the membrane and the second local pressure nodule is configured to apply a second local force to the membrane. The first local pressure nodule and the second local pressure nodule are independently controllable.

公开(公告)号：US20250038008A1

公开(公告)日：2025-01-30

申请号：US18360930

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsiang Cheng ,  Ting-Kui Chang ,  Fu-Ming Huang ,  Li-Chieh Wu ,  Che-Hao Tu

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: Methods for chemical mechanical polishing (CMP), and methods for forming an interconnect structure of a semiconductor device are provided. The methods include performing CMP on a surface of a dielectric structure with a CMP slurry to remove a portion of a metal layer formed in the dielectric structure and having at least a first layer exposed through the surface. In some examples, the CMP slurry that includes an abrasive, an oxidizing agent, and a compound configured to reduce aggregation of the abrasive on the surface of the dielectric structure. In some examples, the compound has positively charged ions that interact with the abrasive to reduce aggregation of the abrasive on a dielectric material. In some examples, the CMP slurry includes potassium hydroxide. In some examples, the compound includes an ammonium salt.