公开(公告)号：US20210391186A1

公开(公告)日：2021-12-16

申请号：US16902180

申请日：2020-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

公开(公告)号：US20170304990A1

公开(公告)日：2017-10-26

申请号：US15136706

申请日：2016-04-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Kui Chang ,  Fu-Ming Huang ,  Liang-Guang Chen ,  Chun-Chieh Lin

IPC: B24B37/20 ,  B24B37/005

CPC classification number: B24B37/20 ,  B24B37/005 ,  B24B37/30

Abstract: A polisher head of a polishing apparatus includes a membrane and a first local pressure nodule and a second local pressure nodule physically contacting the membrane. The first local pressure nodule is configured to apply a first local force to the membrane and the second local pressure nodule is configured to apply a second local force to the membrane. The first local pressure nodule and the second local pressure nodule are independently controllable.

公开(公告)号：US09679848B2

公开(公告)日：2017-06-13

申请号：US15282704

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Han-Hsin Kuo ,  Chung-Chi Ko ,  Neng-Jye Yang ,  Fu-Ming Huang ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L27/108 ,  H01L23/528 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L23/522 ,  H01L21/02 ,  H01L21/311 ,  H01L23/532

CPC classification number: H01L23/528 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

公开(公告)号：US12297375B2

公开(公告)日：2025-05-13

申请号：US17141988

申请日：2021-01-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Chi-Jen Liu ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Chun-Wei Hsu ,  Li-Chieh Wu ,  Peng-Chung Jangjian ,  Kao-Feng Liao ,  Fu-Ming Huang ,  Wei-Wei Liang ,  Tang-Kuei Chang ,  Hui-Chi Huang

IPC: C09G1/02 ,  H01L21/321 ,  H01L21/768 ,  H01L23/535

Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.

公开(公告)号：US20250038008A1

公开(公告)日：2025-01-30

申请号：US18360930

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsiang Cheng ,  Ting-Kui Chang ,  Fu-Ming Huang ,  Li-Chieh Wu ,  Che-Hao Tu

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: Methods for chemical mechanical polishing (CMP), and methods for forming an interconnect structure of a semiconductor device are provided. The methods include performing CMP on a surface of a dielectric structure with a CMP slurry to remove a portion of a metal layer formed in the dielectric structure and having at least a first layer exposed through the surface. In some examples, the CMP slurry that includes an abrasive, an oxidizing agent, and a compound configured to reduce aggregation of the abrasive on the surface of the dielectric structure. In some examples, the compound has positively charged ions that interact with the abrasive to reduce aggregation of the abrasive on a dielectric material. In some examples, the CMP slurry includes potassium hydroxide. In some examples, the compound includes an ammonium salt.

公开(公告)号：US12002684B2

公开(公告)日：2024-06-04

申请号：US18057728

申请日：2022-11-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Ji Cui ,  Fu-Ming Huang ,  Ting-Kui Chang ,  Tang-Kuei Chang ,  Chun-Chieh Lin ,  Wei-Wei Liang ,  Liang-Guang Chen ,  Kei-Wei Chen ,  Hung Yen ,  Ting-Hsun Chang ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Chi-Jen Liu

IPC: H01L21/321 ,  B24B37/04 ,  B24B37/10 ,  C09G1/02

CPC classification number: H01L21/3212 ,  B24B37/044 ,  B24B37/107 ,  C09G1/02

Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

公开(公告)号：US11772228B2

公开(公告)日：2023-10-03

申请号：US16746292

申请日：2020-01-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  B24B57/02 ,  B24B37/015 ,  H01L21/306

CPC classification number: B24B37/16 ,  B24B37/015 ,  B24B57/02 ,  H01L21/30625

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20210220964A1

公开(公告)日：2021-07-22

申请号：US16746292

申请日：2020-01-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ting-Hsun Chang ,  Hung Yen ,  Chi-Hsiang Shen ,  Fu-Ming Huang ,  Chun-Chieh Lin ,  Tsung Hsien Chang ,  Ji Cui ,  Liang-Guang Chen ,  Chih Hung Chen ,  Kei-Wei Chen

IPC: B24B37/16 ,  H01L21/306 ,  B24B37/015 ,  B24B57/02

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

公开(公告)号：US20190244804A1

公开(公告)日：2019-08-08

申请号：US16390691

申请日：2019-04-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Fu-Ming Huang ,  Liang-Guang Chen ,  Ting-Kui Chang ,  Chun-Chieh Lin

IPC: H01L21/02 ,  H01L21/67 ,  B08B1/00 ,  B08B1/04 ,  H01L21/687 ,  B08B3/04 ,  H01L21/306

CPC classification number: H01L21/02043 ,  B08B1/002 ,  B08B1/04 ,  B08B3/04 ,  H01L21/02065 ,  H01L21/02074 ,  H01L21/30625 ,  H01L21/67028 ,  H01L21/67046 ,  H01L21/67092 ,  H01L21/687

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

公开(公告)号：US20150187697A1

公开(公告)日：2015-07-02

申请号：US14145397

申请日：2013-12-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Han-Hsin Kuo ,  Chung-Chi Ko ,  Neng-Jye Yang ,  Fu-Ming Huang ,  Chi-Ming Tsai ,  Liang-Guang Chen

IPC: H01L23/528 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect and a method of forming an interconnect for a semiconductor device is provided. The interconnect is formed by treating an upper surface of a dielectric layer to create a high density layer. The treatment may include, for example, creating a high density monolayer using hexamethyldisilazane (HMDS), trimethylsilydiethylamine (TMSDEA) or trimethylsilylacetate (OTMSA). After treating, the dielectric layer may be patterned to create openings, which are subsequently filled with a conductive material. Excess conductive material may be removed using, for example, a chemical mechanical polishing.

Abstract translation: 提供了形成用于半导体器件的互连的互连和方法。 通过处理电介质层的上表面以形成高密度层来形成互连。 处理可以包括例如使用六甲基二硅氮烷（HMDS），三甲基硅二乙胺（TMSDEA）或三甲基甲硅烷基乙酸酯（OTMSA）产生高密度单层。 在处理之后，电介质层可以被图案化以产生开口，随后填充有导电材料。 可以使用例如化学机械抛光来除去过量的导电材料。