公开(公告)号：US10961114B2

公开(公告)日：2021-03-30

申请号：US16426575

申请日：2019-05-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： B81B7/00 ,  B81C1/00

摘要： The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.

公开(公告)号：US20230399226A1

公开(公告)日：2023-12-14

申请号：US17835175

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Fan Hu ,  Wen-Chuan Tai ,  Li-Chun Peng ,  Hsiang-Fu Chen ,  Ching-Kai Shen ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： B81B7/00 ,  B81C3/00

CPC分类号： B81B7/008 ,  B81C3/001 ,  B81C2201/013 ,  B81B2203/033 ,  B81B2207/015

摘要： The present disclosure relates to an integrated chip including a semiconductor device substrate and a plurality of semiconductor devices arranged along the semiconductor device substrate. A micro-electromechanical system (MEMS) layer overlies the semiconductor device substrate. The MEMS layer includes a first moveable mass and a second moveable mass. A capping layer overlies the MEMS layer. The capping layer has a first lower surface directly over the first moveable mass and a second lower surface directly over the second moveable mass. An outgas layer is on the first lower surface and directly between the first pair of sidewalls. A lower surface of the outgas layer delimits a first cavity in which the first moveable mass is arranged. The second lower surface of the capping layer delimits a second cavity in which the second moveable mass is arranged.

公开(公告)号：US12074110B2

公开(公告)日：2024-08-27

申请号：US17815242

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/31 ,  H01L23/34 ,  H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/34 ,  H01L23/481

摘要： A method for forming a semiconductor device includes receiving a first bonded to a second substrate by a dielectric layer, wherein a conductive layer is disposed in the dielectric layer and a cavity is formed between the first substrate, the second substrate and the dielectric layer; forming a via opening in the second substrate to expose the conductive layer and a vent hole in the substrate to couple to the cavity; forming a first buffer layer covering sidewalls of the via opening and a second buffer layer covering sidewalls of the vent hole; and forming a connecting structure in the via opening and a sealing structure to seal the vent hole.

公开(公告)号：US11772960B2

公开(公告)日：2023-10-03

申请号：US17209098

申请日：2021-03-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0041 ,  B81C1/00293 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/07 ,  B81C2203/0145

摘要： The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

公开(公告)号：US11462478B2

公开(公告)日：2022-10-04

申请号：US16426543

申请日：2019-05-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： H01L23/532 ,  H01L23/31 ,  H01L21/768 ,  H01L23/48 ,  H01L23/34

摘要： A semiconductor device includes a first substrate; a dielectric layer disposed over the first substrate and a conductive layer disposed in the dielectric layer; a second substrate bonded to the dielectric layer, wherein the second substrate has a first surface facing the first substrate and a second surface opposite to the first substrate; a connecting structure penetrating the second substrate and a portion of the dielectric layer and electrically coupled to the conductive layer; a vent hole penetrating the second substrate from the second surface to the first surface; a first buffer layer between the connecting structure and the dielectric layer and between the connecting structure and the second substrate; and a second buffer layer covering sidewalls of the vent hole and exposed through the first surface of the second substrate. The first buffer layer and the second buffer layer include a same material and a same thickness.