公开(公告)号：US11851318B2

公开(公告)日：2023-12-26

申请号：US17237575

申请日：2021-04-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Yi-Chuan Teng ,  Ching-Kai Shen ,  Jung-Kuo Tu ,  Wei-Cheng Shen ,  Xin-Hua Huang ,  Wei-Chu Lin

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0005 ,  B81B3/001 ,  B81C1/00968 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C2201/112 ,  B81C2203/036

摘要： A microelectromechanical system device includes a substrate, a dielectric layer, an electrode, a surface modification layer and a membrane. The dielectric layer is formed on the substrate, and is formed with a cavity that is defined by a cavity-defining wall. The electrode is formed in the dielectric layer. The surface modification layer covers the cavity-defining wall, and has a plurality of hydrophobic end groups. The membrane is connected to the dielectric layer, and seals the cavity. The membrane is movable toward or away from the electrode. A method for making a microelectromechanical system device is also provided.

公开(公告)号：US11516596B2

公开(公告)日：2022-11-29

申请号：US17085423

申请日：2020-10-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Wei-Chu Lin ,  Yi-Chuan Teng ,  Jung-Kuo Tu

IPC分类号： H04R19/00 ,  H04R19/04 ,  B81B3/00 ,  B81C1/00 ,  H04R17/02 ,  H04R31/00 ,  H04R7/18 ,  H04R7/06 ,  H04R19/02

摘要： A MEMS device and a method for manufacturing a MEMS device are provided. The MEMS device includes an anchor, a diaphragm structure, and a sealing film. The diaphragm structure is disposed over the anchor and has an opening through the diaphragm structure. The sealing film covers at least a portion of the opening of the diaphragm structure.

公开(公告)号：US10961114B2

公开(公告)日：2021-03-30

申请号：US16426575

申请日：2019-05-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： B81B7/00 ,  B81C1/00

摘要： The present disclosure provides a semiconductor structure, including a sensing substrate, a capping substrate over the sensing substrate, the capping substrate having a first surface facing toward the sensing substrate and a second surface facing away from the sensing substrate, wherein the capping substrate comprises a through hole extending from the first surface to the second surface, a spacer between the sensing substrate and the capping substrate, the spacer, the sensing substrate, and the capping substrate forming a cavity connecting with the through hole, and a sealing structure at the second surface and aligning with the through hole, wherein the sealing structure comprises a metal layer and a dielectric layer.

公开(公告)号：US12074110B2

公开(公告)日：2024-08-27

申请号：US17815242

申请日：2022-07-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L23/31 ,  H01L23/34 ,  H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76898 ,  H01L23/3171 ,  H01L23/34 ,  H01L23/481

摘要： A method for forming a semiconductor device includes receiving a first bonded to a second substrate by a dielectric layer, wherein a conductive layer is disposed in the dielectric layer and a cavity is formed between the first substrate, the second substrate and the dielectric layer; forming a via opening in the second substrate to expose the conductive layer and a vent hole in the substrate to couple to the cavity; forming a first buffer layer covering sidewalls of the via opening and a second buffer layer covering sidewalls of the vent hole; and forming a connecting structure in the via opening and a sealing structure to seal the vent hole.

公开(公告)号：US11772960B2

公开(公告)日：2023-10-03

申请号：US17209098

申请日：2021-03-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： B81B7/0041 ,  B81C1/00293 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/07 ,  B81C2203/0145

摘要： The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.

公开(公告)号：US11462478B2

公开(公告)日：2022-10-04

申请号：US16426543

申请日：2019-05-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Ching-Kai Shen ,  Yi-Chuan Teng ,  Wei-Chu Lin ,  Hung-Wei Liang ,  Jung-Kuo Tu

IPC分类号： H01L23/532 ,  H01L23/31 ,  H01L21/768 ,  H01L23/48 ,  H01L23/34

摘要： A semiconductor device includes a first substrate; a dielectric layer disposed over the first substrate and a conductive layer disposed in the dielectric layer; a second substrate bonded to the dielectric layer, wherein the second substrate has a first surface facing the first substrate and a second surface opposite to the first substrate; a connecting structure penetrating the second substrate and a portion of the dielectric layer and electrically coupled to the conductive layer; a vent hole penetrating the second substrate from the second surface to the first surface; a first buffer layer between the connecting structure and the dielectric layer and between the connecting structure and the second substrate; and a second buffer layer covering sidewalls of the vent hole and exposed through the first surface of the second substrate. The first buffer layer and the second buffer layer include a same material and a same thickness.