公开(公告)号：US10998194B2

公开(公告)日：2021-05-04

申请号：US16685800

申请日：2019-11-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Chi-Cherng Jeng ,  Chi-Wen Liu

IPC分类号： H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49 ,  H01L21/8234 ,  H01L21/02 ,  H01L27/088 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/51

摘要： Gate stacks for improving integrated circuit device performance and methods for fabricating such gate stacks are disclosed herein. An exemplary gate stack includes a gate dielectric layer disposed over the substrate, a multi-function layer disposed over the gate dielectric layer, and a work function layer disposed over the multi-function layer. The multi-function layer includes a first metal nitride sub-layer having a first nitrogen (N) concentration and a second metal nitride material with a second metal nitride sub-layer having a second N concentration. The second metal nitride sub-layer is disposed over the first metal nitride-sub layer and the first N concentration is greater than the second N concentration. In some implementations, the second N concentration is from about 2% to about 5% and the first N concentration is from about 5% to about 15%.

公开(公告)号：US09768261B2

公开(公告)日：2017-09-19

申请号：US14689786

申请日：2015-04-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Cheng-Ta Wu ,  Yi-Hsien Lee ,  Wei-Ming You ,  Ting-Chun Wang

IPC分类号： H01L29/78 ,  H01L29/167 ,  H01L29/06 ,  H01L29/49 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/167 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0649 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/66795

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate; a fin structure protruding from the substrate, the fin structure extending along a first direction; isolation features disposed on both sides of the fin structure; a gate structure over the fin structure and extending on the isolation features along a second direction perpendicular to the first direction; and wherein the gate structure includes a first segment and a second segment, the second segment being over the first segment and including a greater dimension in the first direction than that of the first segment.

公开(公告)号：US20160155771A1

公开(公告)日：2016-06-02

申请号：US15018603

申请日：2016-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

摘要： A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

公开(公告)号：US10103267B2

公开(公告)日：2018-10-16

申请号：US15608820

申请日：2017-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Ta Wu ,  Ting-Chun Wang ,  Yuan-Nien Chen

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/3115 ,  H01L29/06 ,  H01L21/762

摘要： A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.

公开(公告)号：US10032634B2

公开(公告)日：2018-07-24

申请号：US15149978

申请日：2016-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Chi-Cherng Jeng ,  Chi-Wen Liu

IPC分类号： H01L21/28 ,  H01L29/66 ,  H01L21/02 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/51

摘要： A method includes forming a gate stack over a semiconductor substrate; forming an interlayer dielectric layer surrounding the gate stack; and at least partially removing the gate stack, thereby forming an opening. The method further includes forming a multi-function wetting/blocking layer in the opening, a work function layer over the multi-function blocking/wetting layer, and a conductive layer over the work function layer. The work function layer, the multi-function wetting/blocking layer, and the conductive layer fill the opening. The multi-function wetting/blocking layer includes aluminum, carbon, nitride, and one of: titanium and tantalum.

公开(公告)号：US20170263751A1

公开(公告)日：2017-09-14

申请号：US15608820

申请日：2017-05-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Ta Wu ,  Ting-Chun Wang ,  Yuan-Nien Chen

IPC分类号： H01L29/78 ,  H01L21/3115 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66 ,  H01L29/06

CPC分类号： H01L29/785 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3115 ,  H01L21/76224 ,  H01L29/0649 ,  H01L29/66795 ,  H01L29/7851

摘要： A semiconductor device includes a semiconductor fin, a first silicon nitride based layer, a lining oxide layer, a second silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top surface, a first side surface adjacent to the top surface, and a second side surface which is disposed under and adjacent to the first side surface. The first silicon nitride based layer peripherally encloses the second side surface of the semiconductor fin. The lining oxide layer is disposed conformal to the first silicon nitride based layer. The second silicon nitride based layer is disposed conformal to the lining oxide layer. The gate oxide layer is disposed conformal to the top surface and the first side surface of the semiconductor fin.

公开(公告)号：US20170047420A1

公开(公告)日：2017-02-16

申请号：US15336136

申请日：2016-10-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Sheng-Wen Chen ,  Yu-Ting Lin ,  Che-Hao Chang ,  Wei-Ming You ,  Ting-Chun Wang

IPC分类号： H01L29/49 ,  H01L29/08 ,  H01L21/28 ,  H01L29/423 ,  H01L29/78 ,  H01L21/265 ,  H01L29/51 ,  H01L29/45 ,  H01L29/66

CPC分类号： H01L29/4941 ,  H01L21/02247 ,  H01L21/0234 ,  H01L21/0254 ,  H01L21/26513 ,  H01L21/28026 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/321 ,  H01L29/0847 ,  H01L29/42364 ,  H01L29/45 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device having a high-k gate dielectric, and a method of manufacture, is provided. A gate dielectric layer is formed over a substrate. An interfacial layer may be interposed between the gate dielectric layer and the substrate. A barrier layer, such as a TiN layer, having a higher concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer is formed. The barrier layer may be formed by depositing, for example, a TiN layer and performing a nitridation process on the TiN layer to increase the concentration of nitrogen along an interface between the barrier layer and the gate dielectric layer. A gate electrode is formed over the barrier layer.

摘要翻译： 提供了具有高k栅极电介质的半导体器件及其制造方法。 栅极电介质层形成在衬底上。 界面层可以介于栅极介电层和衬底之间。 形成阻挡层，例如TiN层，其沿阻挡层和栅介质层之间的界面具有较高的氮浓度。 可以通过沉积例如TiN层并在TiN层上进行氮化工艺以增加沿着阻挡层和栅极电介质层之间的界面的氮浓度来形成阻挡层。 在阻挡层上形成栅电极。

公开(公告)号：US09478581B2

公开(公告)日：2016-10-25

申请号：US15018603

申请日：2016-02-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

IPC分类号： H01L31/18 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

摘要： A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

公开(公告)号：US09337192B2

公开(公告)日：2016-05-10

申请号：US14532228

申请日：2014-11-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko Jangjian ,  Ting-Chun Wang ,  Chi-Cherng Jeng ,  Chi-Wen Liu

IPC分类号： H01L29/49 ,  H01L27/088 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L21/28 ,  H01L29/51

CPC分类号： H01L21/28088 ,  H01L21/02183 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： An integrated circuit device includes a semiconductor substrate; and a gate stack disposed over the semiconductor substrate. The gate stack further includes a gate dielectric layer disposed over the semiconductor substrate; a multi-function blocking/wetting layer disposed over the gate dielectric layer, wherein the multi-function blocking/wetting layer comprises tantalum aluminum carbon nitride (TaAlCN); a work function layer disposed over the multi-function blocking/wetting layer; and a conductive layer disposed over the work function layer.

摘要翻译： 集成电路器件包括半导体衬底; 以及设置在半导体衬底上的栅极堆叠。 栅极堆叠还包括设置在半导体衬底上的栅极电介质层; 设置在所述栅极介电层上的多功能阻挡/润湿层，其中所述多功能阻挡/润湿层包括钽铝氮化物（TaAlCN）; 设置在多功能阻挡/润湿层上的功函数层; 以及设置在功函数层上的导电层。

公开(公告)号：US09257476B2

公开(公告)日：2016-02-09

申请号：US14703472

申请日：2015-05-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Shiu-Ko JangJian ,  Min Hao Hong ,  Ting-Chun Wang ,  Chung-Ren Sun

IPC分类号： H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14683

摘要： A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.