公开(公告)号：US3905037A

公开(公告)日：1975-09-09

申请号：US84326869

申请日：1969-06-11

申请人： TEXAS INSTRUMENTS INC

发明人： BEAN KENNETH E ,  CRONIN GEORGE R

IPC分类号： G11C17/08 ,  H01L21/00 ,  H01L21/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/29 ,  H01L27/00 ,  H01L27/082 ,  H01L27/144 ,  H01L29/02 ,  H01L33/00 ,  H03K17/60 ,  H01L21/70 ,  H01L27/02 ,  H01L29/04

CPC分类号： H03K17/60 ,  G11C17/08 ,  H01L21/00 ,  H01L21/76 ,  H01L21/8252 ,  H01L21/8258 ,  H01L23/29 ,  H01L27/00 ,  H01L27/0825 ,  H01L27/1443 ,  H01L29/02 ,  H01L33/00 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S148/072 ,  Y10S148/085 ,  Y10S148/099 ,  Y10S148/115 ,  H01L2924/00

摘要： This invention relates to a monolithic integrated circuit in a substrate of a first semiconductor material containing electrically insulated islands of other different semiconductor materials. Preferably each of the islands is isolated from the substrate and from each other by an insulating layer of material. Thus an integrated circuit can be manufactured in a single substrate in accordance with the particular needs of the circuit functions required.

摘要翻译： 本发明涉及包含其他不同半导体材料的电绝缘岛的第一半导体材料的衬底中的单片集成电路。 优选地，每个岛与衬底隔离并且通过材料的绝缘层彼此隔离。 因此，可以根据需要的电路功能的特定需要在单个基板中制造集成电路。

公开(公告)号：US3471324A

公开(公告)日：1969-10-07

申请号：US3471324D

申请日：1966-12-23

申请人： TEXAS INSTRUMENTS INC

发明人： WILSON ORAN W ,  CRONIN GEORGE R

IPC分类号： C22C1/00 ,  H01L21/00 ,  H01B19/04 ,  C01B27/02 ,  C01G15/00

CPC分类号： C22C1/007 ,  H01L21/00 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/115 ,  Y10S148/13

公开(公告)号：US3392193A

公开(公告)日：1968-07-09

申请号：US41203164

申请日：1964-11-18

申请人： TEXAS INSTRUMENTS INC

发明人： HAISTY ROBERT W ,  CRONIN GEORGE R

IPC分类号： H01L29/207

CPC分类号： H01L29/207 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/107 ,  Y10S438/918

公开(公告)号：US3344071A

公开(公告)日：1967-09-26

申请号：US31143063

申请日：1963-09-25

申请人： TEXAS INSTRUMENTS INC

发明人： CRONIN GEORGE R

IPC分类号： C22C1/00 ,  C30B15/00 ,  C30B15/02 ,  H01L21/00

CPC分类号： C30B15/02 ,  C22C1/007 ,  C30B15/00 ,  C30B29/42 ,  H01L21/00 ,  Y10S148/065

摘要： A high resistivity crystal of gallium arsenide is doped with at least 0.2 part per million by weight of chromium. The crystal may have a resistivity of at least 108 ohm centimetres at 300 DEG K. It may also contain other electrically active ingredients, the dominant constituent being chromium. The crystal may be grown by pulling from a melt of gallium arsenide, the latter being prepared by raising liquid gallium to the melting point of gallium arsenide and maintaining arsenic vapour in proximity therewith (see Division B1).ALSO:A rod of gallium arsenide containing 0.2-360 ppm of chromium is pulled from a melt formed in situ from gallium and chromium in an alumina crucible (65) and arsenic vaporised from a mass (75) outside the crucible. The crucible is contained in a graphite susceptor (63) which is heated by an induction coil (67). The pulled rod is rotated at 25 rpm. The pull rate is 1.5 in/hr. Pulling is effected in argon at atmospheric pressure.

摘要翻译： 砷化镓的高电阻率晶体掺杂有至少0.2重量百分比的铬。 该晶体在300°K时可具有至少108欧姆厘米的电阻率。其还可含有其它电活性成分，主要成分为铬。 晶体可以通过从砷化镓熔体中拉出而生长，后者通过将液态镓升高到砷化镓的熔点并保持砷蒸汽接近（参见B1部分）来制备。 在氧化铝坩埚（65）中从镓和铬原位形成的熔体中拉出0.2-360ppm的铬，并且从坩埚外部的质量（75）汽化的砷。 坩埚包含在由感应线圈（67）加热的石墨基座（63）中。 拉杆以25rpm旋转。 拉力是1.5英寸/小时。 拉伸在大气压下在氩气中进行。