公开(公告)号：US09325334B2

公开(公告)日：2016-04-26

申请号：US13916331

申请日：2013-06-12

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Phillip Michel Nadeau ,  Django Trombley ,  Baher S. Haroun ,  Srinath Mathur Ramaswamy

IPC: H03L7/26

CPC classification number: H03L7/26

Abstract: A frequency reference device that includes a frequency reference generation unit to generate a frequency reference signal based on an absorption line of a gas.

Abstract translation: 一种频率参考装置，包括频率参考产生单元，用于基于气体的吸收线产生频率参考信号。

公开(公告)号：US11742436B2

公开(公告)日：2023-08-29

申请号：US17528716

申请日：2021-11-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Binghua Hu ,  Yanbiao Pan ,  Django Trombley

IPC: H01L29/94 ,  H01L29/66

CPC classification number: H01L29/945 ,  H01L29/66181

Abstract: A semiconductor device includes an integrated trench capacitor in a substrate, with a field oxide layer on the substrate. The trench capacitor includes trenches extending into semiconductor material of the substrate, and a capacitor dielectric in the trenches on the semiconductor material. The trench capacitor further includes an electrically conductive trench-fill material on the capacitor dielectric. A portion of the capacitor dielectric extends into the field oxide layer, between a first segment of the field oxide layer over the trench-fill material and a second segment of the field oxide layer over the semiconductor material. The integrated trench capacitor has a trench contact to the trench-fill material in each of the trenches, and substrate contacts to the semiconductor material around the trenches, with no substrate contacts between the trenches.

公开(公告)号：US11222986B2

公开(公告)日：2022-01-11

申请号：US16939823

申请日：2020-07-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Binghua Hu ,  Yanbiao Pan ,  Django Trombley

IPC: H01L29/94 ,  H01L29/66

Abstract: A semiconductor device includes an integrated trench capacitor in a substrate, with a field oxide layer on the substrate. The trench capacitor includes trenches extending into semiconductor material of the substrate, and a capacitor dielectric in the trenches on the semiconductor material. The trench capacitor further includes an electrically conductive trench-fill material on the capacitor dielectric. A portion of the capacitor dielectric extends into the field oxide layer, between a first segment of the field oxide layer over the trench-fill material and a second segment of the field oxide layer over the semiconductor material. The integrated trench capacitor has a trench contact to the trench-fill material in each of the trenches, and substrate contacts to the semiconductor material around the trenches, with no substrate contacts between the trenches.

公开(公告)号：US20210028316A1

公开(公告)日：2021-01-28

申请号：US16939823

申请日：2020-07-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Binghua Hu ,  Yanbiao Pan ,  Django Trombley

IPC: H01L29/94 ,  H01L29/66

Abstract: A semiconductor device includes an integrated trench capacitor in a substrate, with a field oxide layer on the substrate. The trench capacitor includes trenches extending into semiconductor material of the substrate, and a capacitor dielectric in the trenches on the semiconductor material. The trench capacitor further includes an electrically conductive trench-fill material on the capacitor dielectric. A portion of the capacitor dielectric extends into the field oxide layer, between a first segment of the field oxide layer over the trench-fill material and a second segment of the field oxide layer over the semiconductor material. The integrated trench capacitor has a trench contact to the trench-fill material in each of the trenches, and substrate contacts to the semiconductor material around the trenches, with no substrate contacts between the trenches.

公开(公告)号：US09646906B2

公开(公告)日：2017-05-09

申请号：US14849026

申请日：2015-09-09

Applicant: Texas Instruments Incorporated

Inventor： Benjamin Stassen Cook ,  Juan Alejandro Herbsommer ,  Django Trombley ,  Steven Alfred Kummerl ,  Paul Emerson

IPC: H01L21/288 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H05K1/09 ,  H05K1/16 ,  H01L23/495

CPC classification number: H01L23/3121 ,  H01L21/288 ,  H01L23/3107 ,  H01L23/495 ,  H01L23/5227 ,  H01L24/09 ,  H01L2224/08268 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2924/13055 ,  H01L2924/146 ,  H05K1/092 ,  H05K1/162 ,  H05K1/165 ,  H05K2201/0179 ,  H05K2201/0999 ,  H05K2201/10151

Abstract: A method forming packaged semiconductor devices includes providing a completed semiconductor package having a die with bond pads coupled to package pins. Sensor precursors including an ink and a liquid carrier are additively printed directly on the die or package to provide precursors for electrodes and a sensing material between the sensor electrodes. Sintering or curing removes the liquid carrier such that an ink residue remains to provide the sensor electrodes and sensing material. The sensor electrodes electrically coupled to the pins or bond pads or the die includes a wireless coupling structure coupled to the bond pads and the method includes additively printing an ink then sintering or curing to form a complementary wireless coupling structure on the completed semiconductor package coupled to the sensor electrodes so that sensing signals sensed by the sensor are wirelessly transmitted to the bond pads after being received by the wireless coupling structure.

公开(公告)号：US20220077324A1

公开(公告)日：2022-03-10

申请号：US17528716

申请日：2021-11-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Binghua Hu ,  Yanbiao Pan ,  Django Trombley

IPC: H01L29/94 ,  H01L29/66

Abstract: A semiconductor device includes an integrated trench capacitor in a substrate, with a field oxide layer on the substrate. The trench capacitor includes trenches extending into semiconductor material of the substrate, and a capacitor dielectric in the trenches on the semiconductor material. The trench capacitor further includes an electrically conductive trench-fill material on the capacitor dielectric. A portion of the capacitor dielectric extends into the field oxide layer, between a first segment of the field oxide layer over the trench-fill material and a second segment of the field oxide layer over the semiconductor material. The integrated trench capacitor has a trench contact to the trench-fill material in each of the trenches, and substrate contacts to the semiconductor material around the trenches, with no substrate contacts between the trenches.

公开(公告)号：US10551265B2

公开(公告)日：2020-02-04

申请号：US15698445

申请日：2017-09-07

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Benjamin Stassen Cook ,  Django Trombley ,  Adam Joseph Fruehling ,  Juan Alejandro Herbsommer

IPC: G04F5/14 ,  G01L11/00 ,  G01L11/02

Abstract: A pressure transducer includes a cavity, a first dipolar molecule disposed within the cavity, and a second dipolar molecule disposed within the cavity. The first dipolar molecule exhibits a quantum rotational state transition at a fixed frequency with respect to cavity pressure. The second dipolar molecule exhibits a quantum rotation state transition at a frequency that varies with cavity pressure.