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公开(公告)号:US12063735B2
公开(公告)日:2024-08-13
申请号:US18353295
申请日:2023-07-17
Applicant: Texas Instruments Incorporated
CPC classification number: H05K1/0221 , H01L21/02008 , H01L23/06 , H05K1/0222 , H05K1/0245 , H05K1/115 , H05K3/42
Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.
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公开(公告)号:US20220015225A1
公开(公告)日:2022-01-13
申请号:US17483726
申请日:2021-09-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.
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公开(公告)号:US20220223509A1
公开(公告)日:2022-07-14
申请号:US17707872
申请日:2022-03-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Snehamay Sinha
IPC: H01L23/498 , H01L23/64 , H01L23/00 , H01L21/48
Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.
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公开(公告)号:US11800636B2
公开(公告)日:2023-10-24
申请号:US17483726
申请日:2021-09-23
Applicant: TEXAS INSTRUMENTS INCORPORATED
CPC classification number: H05K1/0221 , H01L21/02008 , H01L23/06 , H05K1/0222 , H05K1/0245 , H05K1/115 , H05K3/42
Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.
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公开(公告)号:US11160163B2
公开(公告)日:2021-10-26
申请号:US15816667
申请日:2017-11-17
Applicant: Texas Instruments Incorporated
Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.
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公开(公告)号:US12021004B2
公开(公告)日:2024-06-25
申请号:US17510684
申请日:2021-10-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Hiep Xuan Nguyen , Jaimal Mallory Wiliamson , Arvin Nono Verdeflor , Snehamay Sinha
IPC: H01L23/367 , H01L21/48 , H01L21/56 , H01L23/00 , H01L23/498
CPC classification number: H01L23/3675 , H01L21/4817 , H01L21/565 , H01L23/367 , H01L23/49816 , H01L23/49822 , H01L24/16 , H01L2224/16237 , H01L2224/32245 , H01L2924/1616 , H01L2924/16251 , H01L2924/16724
Abstract: An electronic device includes a multilevel package substrate, a die, a lid, and a package structure that encloses the die, a portion of the lid, and a portion of the multilevel package substrate, where the package structure fills a gap between a side of another portion of the lid and a side of the die. A method includes attaching a die to a multilevel package substrate with a first side of the die facing the multilevel package substrate and a second side facing away from the multilevel package substrate; positioning a lid on the multilevel package substrate with a first portion of the lid spaced apart from the second side of the die; and forming a package structure that encloses the die and a portion of the multilevel package substrate and fills a gap between the first portion of the lid and the second side of the die.
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公开(公告)号:US20220319950A1
公开(公告)日:2022-10-06
申请号:US17510684
申请日:2021-10-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Hiep Xuan Nguyen , Jaimal Mallory Wiliamson , Arvin Nono Verdeflor , Snehamay Sinha
IPC: H01L23/367 , H01L21/48 , H01L21/56
Abstract: An electronic device includes a multilevel package substrate, a die, a lid, and a package structure that encloses the die, a portion of the lid, and a portion of the multilevel package substrate, where the package structure fills a gap between a side of another portion of the lid and a side of the die. A method includes attaching a die to a multilevel package substrate with a first side of the die facing the multilevel package substrate and a second side facing away from the multilevel package substrate; positioning a lid on the multilevel package substrate with a first portion of the lid spaced apart from the second side of the die; and forming a package structure that encloses the die and a portion of the multilevel package substrate and fills a gap between the first portion of the lid and the second side of the die.
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公开(公告)号:US11289412B2
公开(公告)日:2022-03-29
申请号:US16795873
申请日:2020-02-20
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Snehamay Sinha
IPC: H01L23/498 , H01L23/64 , H01L23/00 , H01L21/48 , H01L23/48
Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.
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公开(公告)号:US20230363083A1
公开(公告)日:2023-11-09
申请号:US18353295
申请日:2023-07-17
Applicant: Texas Instruments Incorporated
CPC classification number: H05K1/0221 , H05K1/115 , H01L21/02008 , H05K3/42 , H01L23/06 , H05K1/0222 , H05K1/0245
Abstract: An electronic substrate includes a dielectric core, a first conducting layer on a first side of the core and a second conducting layer on the second side of the core opposite the first side. At least one differential coaxial through-via includes a first inner signal through-via that is at least electrical conductor lined for a first signal path and at least a second inner signal through-via that is also at least electrical conductor lined positioned side-by-side and being dielectrically isolated from the first inner signal through-via for a second signal path. An annular-shaped outer ground shield enclosure is at least conductor lined that surrounds and is dielectrically isolated from both the first and second inner signal through-vias.
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公开(公告)号:US11804382B2
公开(公告)日:2023-10-31
申请号:US17707872
申请日:2022-03-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Jaimal Mallory Williamson , Snehamay Sinha
IPC: H01L21/48 , H01L23/498 , H01L23/64 , H01L23/00
CPC classification number: H01L21/4857 , H01L21/4853 , H01L23/49816 , H01L23/49822 , H01L23/642 , H01L24/16 , H01L24/81 , H01L2224/16235 , H01L2224/81815
Abstract: A semiconductor package includes a multilayer substrate including a dielectric layer, a first conductive layer forming a first set of electrical contacts, a second conductive layer forming package electrical contacts and two capacitor electrical contacts, conductive vias extending through the dielectric layer between the first conductive layer with the second conductive layer, and a solder mask layer over the second conductive layer. The semiconductor package further includes a semiconductor die on the first side of the multilayer substrate electrically connected a capacitor on the second side of the multilayer substrate. A recessed portion of the capacitor is within a capacitor opening of the solder mask layer between the two capacitor electrical contacts and a board-side surface of the solder mask layer.
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